CdTe thin films grown by pulsed laser deposition using powder as target: Effect of substrate temperature

Moure-Flores, F. de; Quiñones-Galván, J.G.; Guillén-Cervantes, A.; Arias-Cerón, J.S.; Hernández–Hernández, A.; Santoyo-Salazar, J.; Santos‐Cruz, J.; Mayén-Hernández, S.A.; Olvera, M. de la L.; Mendoza-Álvarez, J. G.; Meléndez‐Lira, M.; Contreras‐Puente, G.

doi:10.1016/j.jcrysgro.2013.09.036

Cited by 50 publications

(13 citation statements)

References 11 publications

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“…7 and the values are shown in Table I. The value of optical conductivity lies between 1.741 Â 10 13 and 5.234 Â 10 13 . This infers that the contribution of electron transition increases with dopant level, which may be due to the reduction in energy band gap.…”

Section: Optical Conductivitymentioning

confidence: 95%

“…This improvement in efficiency of CdTe:Cu/CdS cell compared to that of CdTe/CdS cell was due to the decrease in series resistance of cell upon the doping of Cu into CdTe matrix. 8 Till now, various techniques such as close spaced sublimation, 9 chemical bath deposition, 10 thermal evaporation, 11 electrodeposition, 12 pulsed laser deposition, 13 and rf sputtering 14 have been adopted for the deposition of CdTe thin films. Out of which, the electron beam evaporation technique, one of the physical vapor deposition methods, has been considered largely for the growth of device quality CdTe thin films because of its maximum possibility for the direct transfer of energy to the source.…”

Section: Introductionmentioning

confidence: 99%

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Physical properties of electron beam evaporated CdTe and CdTe:Cu thin films

Punitha

Sivakumar

Sanjeeviraja

et al. 2014

Journal of Applied Physics

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In this paper, we report on physical properties of pure and Cu doped cadmium telluride (CdTe) films deposited onto corning 7059 microscopic glass substrates by electron beam evaporation technique. X-ray diffraction study showed that all the deposited films belong to amorphous nature. The average transmittance of the films is varied between 77% and 90%. The optical energy band gap of pure CdTe film is 1.57 eV and it decreased to 1.47 eV upon 4 wt. % of Cu addition, which may be due to the extension of localized states in the band structure. The refractive index of the films was calculated using Swanepoel method. It was observed that the dispersion data obeyed the single oscillator of the Wemple-Didomenico model, from which the dispersion energy (Ed) parameters, dielectric constants, plasma frequency, and oscillator energy (Eo) of CdTe and CdTe:Cu films were calculated and discussed in detail with the light of possible mechanisms underlying the phenomena. The variation in intensity of photoluminescence band edge emission peak observed at 820 nm with Cu dopant is due to the change in surface state density. The observed trigonal lattice of Te peaks in the micro-Raman spectra confirms the p-type conductive nature of films, which was further corroborated by the Hall effect measurement. The lowest resistivity of 6.61 × 104 Ω cm was obtained for the CdTe:Cu (3 wt. %) film.

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Section: Optical Conductivitymentioning

confidence: 95%

Section: Introductionmentioning

confidence: 99%

Physical properties of electron beam evaporated CdTe and CdTe:Cu thin films

Punitha

Sivakumar

Sanjeeviraja

et al. 2014

Journal of Applied Physics

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“…2(a) gives the UV-Vis absorbance spectra for as-grown and annealed films. The absorption coefficient (α) and optical energy band gap (E g ) were calculated using the relation concerned and Tauc relation respectively [4].…”

Section: Structural Analysismentioning

confidence: 99%

“…The binary compounds such as II-VI semiconductors are paid more attention due to their potential applications especially in thin film solar cells. The cadmium telluride (CdTe) is a II-VI compound semiconductor and found most suitable candidate for the fabrication of thin film solar cells due to its optimum energy band gap (1.44 eV) at room temperature and high absorption coefficient ( 410 5 cm À 1 ) in the visible range [1][2][3][4]. It is one of the most promising materials for enormous potential applications especially in the field of solar cells and optoelectronic devices like γ and X-ray detectors, light emitting diodes (LEDs), field effect transistors (FETs), lasers etc.…”

Section: Introductionmentioning

confidence: 99%

Physical properties of vacuum evaporated CdTe thin films with post-deposition thermal annealing

Chander

Dhaka

2015

Physica E: Low-dimensional Systems and Nanostructures

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“…Cadmiun telluride (CdTe) films are suitable for application in optoelectronic devices such as solar cells and x-ray detectors due to its excellent optical and electrical properties [1][2][3][4][5]. One of the main characteristics of CdTe is that a layer of a few micrometers of thickness can absorb 90% of incident photons, because it has an optical bandgap of 1.5 eV and high absorption coefficient (>5×10 5 cm −1 ) [6]. CdTe can have both n or p-type conductivity, depending on impurity atoms such as Ge, Pb and Sn [7,8].…”

Section: Introductionmentioning

confidence: 99%

CdTe:Sn thin films deposited by the simultaneous laser ablation of CdTe and Sn targets

Rivera

García

Cardona

et al. 2020

Mater. Res. Express

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CdTe:Sn thin films were grown by pulsed laser deposition on glass substrates at room temperature. The study of the changes in the chemical, structural and optical properties of the films as a function of the density of Sn ions calculated from Langmuir planar probe measurments is presented. Four films were grown by the simultaneous ablation of CdTe and Sn targets in vacuum. The Sn ion density was modified by varying the fluence on the Sn target, while the CdTe plasma density was kept constant for all the deposits. One CdTe film was grown as control sample using the same experimental conditions as in the CdTe:Sn films. The chemical composition was analyzed by XPS, where a dependence of the Sn incorporation into the CdTe lattice, on the Sn ion plasma density was demonstrated. The crystalline structure analysis by XRD showed a hexagonal structure for all the films. When the CdTe and Sn plasmas were combined, a preferential orientation in the plane (110) was observed for the resulting films. Furthermore, as Sn plasma density increased, the intensity of the (110) peak increased as well, suggesting that crystalline re-orientation is an effect of Sn incorporated into the CdTe lattice. Vibrational behavior was analyzed by Raman spectroscopy. A vibrational mode appeared at 118 cm −1 and was related to a Sn-Te vibration, suggesting the incorporation of substitutional Sn into the CdTe lattice. The Sn-Te bonding was confirmed by XPS by the appearance of signals centered at 485 and 494 eV, which correspond to Sn 2+ in SnTe. Thin films thicknesses values were between 320 and 460 nm increasing with Sn ion density. The band gap calculated using UV-vis spectrophotometry, resulted in values ranging from 1.42 to 1.46 eV. PL measurements showed a slight blue shift of the near-edge emission as Sn plasma density increased.

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CdTe thin films grown by pulsed laser deposition using powder as target: Effect of substrate temperature

Cited by 50 publications

References 11 publications

Physical properties of electron beam evaporated CdTe and CdTe:Cu thin films

Physical properties of electron beam evaporated CdTe and CdTe:Cu thin films

Physical properties of vacuum evaporated CdTe thin films with post-deposition thermal annealing

CdTe:Sn thin films deposited by the simultaneous laser ablation of CdTe and Sn targets

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