CdS/PbSe heterojunction for high temperature mid-infrared photovoltaic detector applications

Abstract

n-CdS/p-PbSe heterojunction is investigated. A thin CdS film is deposited by chemical bath deposition on top of epitaxial PbSe film by molecular beam epitaxy on Silicon. Current-voltage measurements demonstrate very good junction characteristics with rectifying ratio of $178 and ideality factor of 1.79 at 300 K. Detectors made with such structure exhibit mid-infrared spectral photoresponse at room temperature. The peak responsivity R k and specific detectivity D * are 0.055 A/W and 5.482 Â 10 8 cmÁHz 1/2 /W at k ¼ 4.7 lm under zero-bias photovoltaic mode. Temperature-dependent photoresponse measurements show abnormal intensity variation below $200 K. Possible reasons for this phenomenon are also discussed. V

Millisecond Laser Ablation of Molybdenum Target in Reactive Gas toward MoS2 Fullerene-Like Nanoparticles with Thermally Stable Photoresponse

“…46 In contrast, the device without the annealing treatment at 573 K shows very weak photoresponse (see Supporting Information, Figure S6). Second, for the highly resistive MoS 2 FL-NPs, the thermal activation helps the electron transition and improves the conductivity, thus magnifying the photocurrent and reducing the response and recovery time.…”

Numerical analysis of CdS/PbSe room temperature mid-infrared heterojunction photovoltaic detectors

“…Figure 2(a) shows the energy band diagram for the heterojunction structure, which is suggested to be a type II alignment heterojunction according to the work shown in the previous work. [1] The working mechanism of the heterojunction can be described as follows. When light of mid-infrared wavelength (3-5µm) falls onto the heterojunction photodetector in backillumination mode, the light induced electron-hole pairs will be generated mostly in neutral p region of PbSe layer.…”

“…Therefore, a preliminary experimental exploration on the feasibility of using CdS/PbSe heterostructure for mid-IR detector applications has been investigated and reported by our group recently. [1] The device demonstrated the preliminary performance at room temperature with 55mA/W peak responsivity and 5.48×10 8 Jones peak detectivity at λ=4.7µm under zero-bias photovoltaic mode.…”

Lead Selenide Polycrystalline Coatings Sensitized Using Diffusion and Ion Beam Methods for Uncooled Mid-Infrared Photodetection

“…Likewise, great efforts have been devoted to the structural, compositional, optical, electrical, and optoelectronic properties of this material, as well as the relevant physical mechanisms such as crystal growth and carrier transport [44][45][46][47]. Among these, high performance infrared-sensitive photodetectors based on the quantum dot [29,30], polycrystalline [48,49], and composite material [50], as well as the relevant heterojunctions [51], have attracted wider attention. However, absorbing and detecting mid-infrared photons should usually performed at low temperatures because of the thermally excited carriers and density fluctuations of carriers due to the narrow bandgap of the material.…”