2009
DOI: 10.1016/j.mseb.2008.05.006
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Abstract: a b s t r a c tThe effect of low-temperature anneals (≤500 • C) on Cz-Si minority carrier lifetime has been investigated using near-band-edge cathodoluminescence (CL). The low-temperature anneals are intended to produce efficient gettering by taking advantage of the increasing supersaturation of impurities as temperatures are reduced. It is found that the anneals affect the CL efficiency through several different mechanisms and that annealing under "dirty" conditions does not introduce significant amounts of …

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