Carrier mobility model for GaN

Mnatsakanov, T. T.; Levinshteǐn, M. E.; Pomortseva, L. I.; Yurkov, S. N.; Simin, Grigory; Khan, M. Asif

doi:10.1016/s0038-1101(02)00256-3

Cited by 243 publications

(139 citation statements)

References 10 publications

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“…37,38 This conclusion could also be supported by the successful fitting, as shown in Figure 5, of R sh to the following power-law relation with temperature, 13,32 …”

Section: Ecs Journal Of Solid State Science and Technology 4 (2) P30mentioning

confidence: 54%

Mechanisms of Ohmic Contact Formation and Carrier Transport of Low Temperature Annealed Hf/Al/Ta on In_0.18Al_0.82N/GaN-on-Si

Liu

Singh

Kyaw

et al. 2014

ECS J. Solid State Sci. Technol.

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The mechanisms of ohmic contact formation and carrier transport of low temperature (600 GaN based high mobility electron transistors (HEMTs) are of interest for applications in high-temperature, high-speed and high-power devices owing to the wide bandgap, high saturation velocity and high critical breakdown field of GaN.1,2 To realize high performance in AlGaN/GaN and InAlN/GaN HEMTs, good ohmic contacts with low resistivity are critical. Although very low contact resistance can be achieved by means of regrowth technique, 3 alloyed ohmic contacts are still most widely used due to their fabrication simplicity and low cost. The typical ohmic metal stacks are Ti/Al based (e.g., Ti/Al/X/Au), where Ti is the bottom layer, followed by Al, a diffusion barrier layer X (where X = Ni, Mo and Ti, etc.) and a Au capping layer. [4][5][6][7][8][9][10][11] In order to realize a low contact resistivity for the aforementioned ohmic contact scheme, the metal stack is usually annealed at high temperature (∼800• C), which leads to the presence of randomly distributed TiN inclusions, so-called contact inclusions or contact spikes, formed at the metal-semiconductor interface. 8,12 The presence of contact inclusions has shown to be vital to achieving good ohmic properties by Kim et al. 13 for InAlN/GaN HEMTs, as contact inclusions provide direct electron transport paths through the InAlN barrier layer to the 2DEG channel. On the other hand, these contact inclusions can also lead to lower breakdown voltage for GaN based HEMTs. 14,15 In our recent study, 16 we have proposed a low thermal budget (≤600• C) Hf/Al/Ta ohmic contact scheme on unintentionally doped In 0.18 Al 0.82 N/GaN grown on Si substrate, which has demonstrated low contact resistivity, smooth surface morphology and metalsemiconductor interface. In addition, the In 0.18 Al 0.82 N/GaN HEMTs fabricated with Hf/Al/Ta ohmic contacts have shown significantly improved breakdown voltage, compared to devices with traditional Ti/Al/Ni/Au ohmic contacts, owing to the source-carrier-injection mechanism suppressed by the smooth metal-semiconductor interface in the former. Our low thermal budget Hf/Al/Ta ohmic contacts show that even with the absence of contact inclusions, good ohmic contact properties can be achieved. This is in contrast to the result of Kim et al., which has shown the necessity of contact inclusions to ohmic contact formation. We noted that our InAlN layer is much thinner than that of Kim et al., hence may not need the presence of contact inclusions for good ohmic contact formation. In addition, it is noted that although analytically studies on the transport mecha- * Electrochemical Society Active Member.z E-mail: a0068100@nus.edu.sg; elecef@nus.edu.sg nism of ohmic contacts with spike structures on AlGaN/GaN 17,18 and InAlN/GaN 13,19 heterostructures have been reported, similar studies for ohmic contacts with a smooth metal-semiconductor interface on InAlN/GaN have not been reported. Hence, the Hf/Al/Ta contacts can be used to understand the carrier transport mechani...

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“…37,38 This conclusion could also be supported by the successful fitting, as shown in Figure 5, of R sh to the following power-law relation with temperature, 13,32 …”

Section: Ecs Journal Of Solid State Science and Technology 4 (2) P30mentioning

confidence: 54%

Mechanisms of Ohmic Contact Formation and Carrier Transport of Low Temperature Annealed Hf/Al/Ta on In_0.18Al_0.82N/GaN-on-Si

Liu

Singh

Kyaw

et al. 2014

ECS J. Solid State Sci. Technol.

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“…measurements of C-doped or MBE-grown GaN layers [25] which lead to inappropriate fit parameters as in [26]. In ternary and MQW layers, the mobilities are further reduced by additional scattering mechanisms, that are related to alloy disorder, interface roughness, or compositional fluctuations.…”

Section: Theoretical Models and Materials Parametersmentioning

confidence: 99%

Electronic Properties of InGaN/GaN Vertical‐Cavity Lasers

Piprek¹,

DenBaars

et al. 2007

Nitride Semiconductor Devices: Principles and Simulation

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“…Therefore, the current I D tends to decrease, which is further gained due to the impact of the self-heating. The issue of selfheating is related to an excessive power-dissipation and occurs as a thermal mobility degeneration [3]. In the last interval t 3 , the temperature within the device reaches a stable value, which leads to a respective saturation of the current I D,sat .…”

Section: Sc Behaviour and Test Conditionsmentioning

confidence: 99%

“…According to the specific aim of condition D (see chapter III) a constant value of V GS,sat is achieved, whereas a V DS dependency occurs in case of condition B. However, the change of I D,sat , for a constant bias at condition D, also refers to a thermal mobility degeneration due to excessive power dissipation [3], as discussed in chapter III. Consequently, the further difference of the saturation values between conditions B with D relates to the impact of the GBD.…”

Section: Gate-bias Dependencementioning

confidence: 99%

Experimental study of the short-circuit performance for a 600V normally-off p-gate GaN HEMT

Oeder

Castellazzi

Pfost

2017

2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)

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Abstract-In this paper, the short-circuit robustness of a normally-off GaN HEMT is investigated in relation to applied bias conditions and pulse duration. The results align with previous studies on normally-on devices in highlighting an electrical type of failure. Here, however, the relevance of the specific gate-drive circuit design and corresponding device operational conditions is demonstrated. A gate-bias dependence (GBD) of the failure, correlated to the applied drain-source voltage, is introduced as a novel specific feature for the p-Gate type device.

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Carrier mobility model for GaN

Cited by 243 publications

References 10 publications

Mechanisms of Ohmic Contact Formation and Carrier Transport of Low Temperature Annealed Hf/Al/Ta on In_0.18Al_0.82N/GaN-on-Si

Mechanisms of Ohmic Contact Formation and Carrier Transport of Low Temperature Annealed Hf/Al/Ta on In_0.18Al_0.82N/GaN-on-Si

Electronic Properties of InGaN/GaN Vertical‐Cavity Lasers

Experimental study of the short-circuit performance for a 600V normally-off p-gate GaN HEMT

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Carrier mobility model for GaN

Cited by 243 publications

References 10 publications

Mechanisms of Ohmic Contact Formation and Carrier Transport of Low Temperature Annealed Hf/Al/Ta on In0.18Al0.82N/GaN-on-Si

Mechanisms of Ohmic Contact Formation and Carrier Transport of Low Temperature Annealed Hf/Al/Ta on In0.18Al0.82N/GaN-on-Si

Electronic Properties of InGaN/GaN Vertical‐Cavity Lasers

Experimental study of the short-circuit performance for a 600V normally-off p-gate GaN HEMT

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Product

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About

Mechanisms of Ohmic Contact Formation and Carrier Transport of Low Temperature Annealed Hf/Al/Ta on In_0.18Al_0.82N/GaN-on-Si

Mechanisms of Ohmic Contact Formation and Carrier Transport of Low Temperature Annealed Hf/Al/Ta on In_0.18Al_0.82N/GaN-on-Si