Ulrike Grossner, Jens S. Christensen, Bengt G. Svensson, Andrej Yu. Kuznetsov
Single-crystal ZnO has been hydrothermally grown with additional In 2 O 3 in the solution. Schottky barrier contacts have been deposited by electron beam evaporation of Pd onto the (0001) face. Capacitance-voltage measurements have been performed to reveal the carrier concentration as a function of the In 2 O 3 content in the solution, and secondary-ion mass spectrometry was used to measure the resulting In concentration in the samples. For an In 2 O 3 content of 2 × 10 19 cm −3 , the average free electron co…
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