Carbon Nanotube Field-Effect Transistors for High-Performance Digital Circuits—DC Analysis and Modeling Toward Optimum Transistor Structure

Raychowdhury, Arijit; Keshavarzi, Ali; Kurtin, Juanita; De, Vivek; Roy, Kaushik

doi:10.1109/ted.2006.883816

Cited by 60 publications

(24 citation statements)

References 30 publications

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“…In SB-CNT-FETs, tunneling of electrons and holes from the potential barriers at the source and drain junctions constitutes the current (Tersoff, 2007). The barrier width is modulated by the application of gate voltage, and thus, the transconductance of the device is dependent on the gate voltage (Raychowdhury et al, 2006). A typical structure and the distribution of the potential energy on the channel are shown in Fig.…”

Section: Investigation Of Influence Of Contact Interfacesmentioning

confidence: 99%

Low-Frequency Noise Spectroscopy at Nanoscale: Carbon Nanotube Materials and Devices

Gasparyan¹

2011

Carbon Nanotubes Applications on Electron Devices

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Section: Investigation Of Influence Of Contact Interfacesmentioning

confidence: 99%

Low-Frequency Noise Spectroscopy at Nanoscale: Carbon Nanotube Materials and Devices

Gasparyan¹

2011

Carbon Nanotubes Applications on Electron Devices

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“…In SB-CNTFETs, tunneling of electrons and holes from the potential barriers at the source and drain junctions constitutes the current. The barrier width is modulated by the application of gate voltage, and thus, the transconductance of the device is dependent on the gate voltage (Raychowdhury, et al, 2006). The other type of the CNTFETs takes advantage of the n-doped CNT as the contact.…”

Section: Types Of Cntfetsmentioning

confidence: 99%

Fundamental Physical Aspects of Carbon Nanotube Transistors

Kordrostami¹,

Sheikhi²

2010

Carbon Nanotubes

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“…CNTs are graphene sheets rolled into cylindrical and the direction of wrapping graphene is chirality [3]. The diameter of carbon nanotube the can be expressed as [4]:…”

Section: Introductionmentioning

confidence: 99%

Low Power and High Speed D-Latch Circuit Designs Based on Carbon Nanotube FET

Talebipoor¹,

Keshavarzian²,

Irannejad³

2012

IJET

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In this paper we propose low power and high speed D-latch circuits, base on carbon nanotube field effect transistor. Dlatches are the important state-holding elements and systems performance enhancement will be achieved by improving the flip-flop latches structure. The circuit designs are simulated by HSPICE .In this paper the consumption result of the circuit parameters such as delay, power and PDP for our three different D-latch circuit design in various voltages and different temperatures.

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Carbon Nanotube Field-Effect Transistors for High-Performance Digital Circuits—DC Analysis and Modeling Toward Optimum Transistor Structure

Cited by 60 publications

References 30 publications

Low-Frequency Noise Spectroscopy at Nanoscale: Carbon Nanotube Materials and Devices

Low-Frequency Noise Spectroscopy at Nanoscale: Carbon Nanotube Materials and Devices

Fundamental Physical Aspects of Carbon Nanotube Transistors

Low Power and High Speed D-Latch Circuit Designs Based on Carbon Nanotube FET

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