Carbon-Hydrogen Interaction in III-V Compounds

Clerjaud, B.; Côté, D.; Giligny, François; Hahn, W.-S.; Krause, Markus; Porte, C.; Ulrici, W.

doi:10.4028/www.scientific.net/msf.83-87.563

Cited by 14 publications

(10 citation statements)

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“…It was suggested that the complexes of H with the As-site acception also have a BC configuration but with the H attached primarily to the acceptor [39]. This model is strongly supported by the observed trend in the vibrational frequencies for the different acceptors, stress data [48,49], and theory [22,50].…”

Section: Accepor-h Complexessupporting

confidence: 63%

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Hydrogen Passivation in Semiconductors

Stavola

1992

Acta Phys. Pol. A

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Section: Accepor-h Complexessupporting

confidence: 63%

“…For a few other centers, the motion of the H has been found to be thermally activated. This is the case for Si:B-H [69][70][71] [49].…”

Section: Reorientation Kinetics Of Acceptor-h Complexesmentioning

confidence: 99%

Hydrogen Passivation in Semiconductors

Stavola

1992

Acta Phys. Pol. A

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“…The temperature dependence for hydrogen LVM's in GaAs is well described by a model in which the complex interacts with a single acoustical phonon. 20 In the weak-coupling limit, this interaction leads to a temperature-dependent frequency shift given by ␦ϭ ␦ 0 e h 0 /kT Ϫ1 and linewidth broadening given by…”

mentioning

confidence: 99%

Carbon acceptors and carbon-hydrogen complexes in AlSb

2001

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Aluminum antimonide ͑AlSb͒ has potential applications as a radiation detector and as a material in highmobility heterostructures. As-grown AlSb exhibits p-type conductivity. Using infrared absorption spectroscopy, we have observed local vibrational modes ͑LVM's͒ arising from carbon impurities in n-and p-type AlSb. The first and second harmonics of the 12 C mode have frequencies of 591.6 and 1179.2 cm Ϫ1 , respectively, at liquid-helium temperatures. A peak at 572.9 cm Ϫ1 is tentatively identified as the 13 C LVM. Carbon-hydrogen complexes were formed by annealing p-type AlSb in hydrogen gas, yielding a C-H stretch mode at 2566.6 cm Ϫ1. Our results indicate that during the growth of bulk AlSb, carbon contamination may be an important source of unintentional p-type doping.

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“…The presence of hydrogen in the centre was confirmed by the observation of the corresponding ~2C-D vibration of 1969 em-1 [70~ 73]. Based on experimental and theoretical studies, the hydrogen is attached primarily to the carbon atom (on the As sublattice) and it is located at the bond-centred site between the CAs and a Ga neighbor [69,74,75].…”

Section: The Hydrogen Passivation Of Carbonmentioning

confidence: 81%

Carbon-impurity incorporation during the growth of epitaxial group III?V materials

Abernathy

Hobson

1996

J Mater Sci: Mater Electron

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This paper is a review of the incorporation and behaviour of carbon in group III-V materials. Both vapour phase epitaxy and growth in ultra high-vacuum environments are covered. Particular attention is given to the factors which influence the carbon-uptake rate such as the growth temperature, ratio of group V to group III materials and parasitic interaction with other species at the growth front. Among the latter, the role of hydrogen is crucial not only to the understanding of the incorporation of carbon but also to its behaviour in the lattice. Consequently, this issue is thoroughly discussed for both growth methods. Potential sources for the introduction of carbon to the growth front are also compared in the light of their utility for obtaining high well-confined acceptor Profiles, such as are required in the latest-generation electronic and photonic devices. Finally, the material quality and dopant stability which can be obtained with carbon-doped materials will be briefly reviewed and, where possible, contrasted with that which can be obtained with other p-type dopants.

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Carbon-Hydrogen Interaction in III-V Compounds

Cited by 14 publications

References 0 publications

Hydrogen Passivation in Semiconductors

Hydrogen Passivation in Semiconductors

Carbon acceptors and carbon-hydrogen complexes in AlSb

Carbon-impurity incorporation during the growth of epitaxial group III?V materials

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