Carbon-hydrogen complex in GaP

Clerjaud, B.; Côté, D.; Hahn, W.-S.; Ulrici, W.

doi:10.1063/1.105054

Cited by 32 publications

(16 citation statements)

References 10 publications

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“…B±H would show a pronounced 11 B, 10 B isotope splitting and is expected around 2300 cm ± ±1 . The vibrational lines of C±H and N±H in GaP are well known [5,6]. Thus, the assignment of the investigated vibrational lines to stretching modes of two O±H centres seems to be justified.…”

Section: Methodsmentioning

confidence: 85%

Local-Vibrational-Mode Absorption of Two O-H Centres in GaP

Ulrici¹,

Czupalla

Seifert

1998

phys. stat. sol. (b)

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In LEC-grown GaP, two vibrational lines at 3250.9 cm ± ±1 and 3106.0 cm ± ±1 are measured and assigned to the stretching modes of two different O±H centres. In GaP containing both hydrogen and deuterium, two additional lines appear, both shifted to lower energies by the same factor r 1X346. This result shows that both O±H centres contain only one hydrogen atom. The O±D line at 2415 cm ± ±1 is split into two lines. This splitting possibly indicates a further example for resonant interaction of local modes with extended ones. The comparison with GaAs suggests the assignment of two lines to the analogous O±H centres in GaAs.

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Section: Methodsmentioning

confidence: 85%

Local-Vibrational-Mode Absorption of Two O-H Centres in GaP

Ulrici¹,

Czupalla

Seifert

1998

phys. stat. sol. (b)

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“…6. 30 Apparently, the energy necessary to dissociate the C-H complex is significantly larger than for the Zn-H pair. If the CH 3 radical can attach at a step site and lose one or more H ligands before desorbing, it will result in the incorporation of C into the solid.…”

Section: B Residual Impurity Incorporationmentioning

confidence: 99%

Effects of surfactants Sb and Bi on the incorporation of zinc and carbon in III/V materials grown by organometallic vapor-phase epitaxy

Howard

Chapman

Stringfellow

2006

Journal of Applied Physics

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The incorporation of both dopants and background impurities during the organometallic vapor phase epitaxial ͑OMVPE͒ growth of GaAs, GaInP, and GaP has been significantly altered by the use of the surfactants Sb and Bi. Sb and Bi are isoelectronic with the group V host elements, and so produce no independent doping. This paper demonstrates that the incorporation of Zn can be increased by an order of magnitude in GaP to a value of approximately 10 20 cm −3 , the highest value reported to date. Additionally, these same surfactants lead to significant decreases in carbon contamination during growth. At high growth temperatures the reduction can be as large as 100ϫ in GaP. The surfactants also result in marked decreases in autodoping due to S and Si from the substrate. A marker that may help identify the mechanism for these effects is H incorporation. Both Sb and Bi surfactants give rise to increased concentrations of H in the GaP layers. Similar effects are observed in GaInP. However, in GaAs, no H is detected in the layers. One possible explanation for these phenomena is that Sb or Bi increases the surface H concentration. The increased H would have two possible effects on the incorporation of dopants and impurities. ͑1͒ Passivation of the Zn acceptor by formation of a neutral Zn-H complex would lead to increased incorporation for thermodynamic reasons. ͑2͒ Allowing increased desorption of C, S, and Si from the surface by increased formation of volatile hydrides leads to decreased incorporation levels. These results suggest a simple and effective method of controlling the incorporation of dopant and impurity atoms by adding a minute amount of surfactant during OMVPE growth.

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“…1-3 and summarized in Tables 1 and 2 B isotope splitting should be seen. Carbon can be excluded, as the C-H vibrational spectra are well known in GaAs [10] and GaP [7], the same holds for N-H, [11,12]. Therefore, most probably oxygen is the core of the two hydrogen centres investigated here.…”

Section: Discussionmentioning

confidence: 99%

“…Additionally, undoped polycrystalline GaAs and GaP were investigated, which have been synthesized in a separate highpressure equipment in p-BN crucibles under 70 bar N 2 or Ar inert gas. For the doping of the boules with deuterium, the boric oxide encapsulant was wetted with D 2 O as it has been earlier shown to be effective for GaP [7] and InP [8]. The samples for the absorption measurements (thickness 5-12 mm) were cut from different parts of the boules and held at T ¼ 7 or 80 K in an Oxford Instruments cryostat Optistat CF .…”

Section: Methodsmentioning

confidence: 99%