Capacitance-voltage profiling: Research-grade approach versus low-cost alternatives

Reynolds, Neal; Panda, Cristian; Essick, John

doi:10.1119/1.4864162

Cited by 20 publications

(11 citation statements)

References 32 publications

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“…There is a variety of capacitance-based techniques which can be used to probe the electrical properties of defects in semiconductors. In this thesis, Impedance spectroscopy [316][317][318], Capacitance-Voltage measurements [9,319,320], thermal admittance spectroscopy (TAS) [9,321,322] and deep-level transient spectroscopy (DLTS) [9,323] were performed. Additionally, SSPC measurements are also based on capacitance measurements, and will be introduced in Sec.…”

Section: Capacitance-based Measurementsmentioning

confidence: 99%

Ti- and Fe-related charge transition levels in β−Ga2O3

Zimmermann

Frodason

Barnard

et al. 2020

Applied Physics Letters

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This thesis would not have been possible without the support of many people, and I am eternally grateful for all the support. I hope to see some of you again in the future! The main objective of my PhD project was to study defects in semiconducting oxides within the research project FOXHOUND headed by Prof. Lasse Vines, my main supervisor. I am grateful to Lasse for the opportunity to work on this topic. I have learned much more than I imagined I would when I started. Lasse, you have been a patient and competent supervisor who always took time to answer endless streams of questions. Prof. Truls Norby and Assoc. Prof. Anette Eleonora Gunnaes were co-advisors for my PhD project. I am grateful to Truls for introducing me to the chemist's view on defects and his group FASE/ELCHEM. I am truly sad that I did not get to collaborate more with Anette. I also want to thank Prof. Eduard Monakhov and the late Prof. Bengt Gunnar Svensson. Both were valuable unofficial advisers on my PhD, and helped moving my work along. Most of my work was carried out within the semiconductor physics group at the University of Oslo (LENS), and I would like to thank of all its current and former members for contributing to my work in many ways. There are some people who deserve special thanks. First of all, I am grateful to my long-term office mates Torunn, Sigbjørn and Josef for sharing many conversations and being there for each other. Secondly, I am particularly grateful to all my close collaborators at LENS, and especially Julie, Philip, Ymir, Vegard R., Vegard O., Viktor and Espen. I also want to thank our engineers (Micke, Halvor, Christoph and Viktor) and administrative staff (Marit, Heine and Kristin) for keeping things running! Also, thanks to Ilia, Robert, Vegard R. and Jon for taking care of the needs of the E-Lab and the Online-Setup. I was a co-supervisor for two master students: Vegard R. and Espen. I hope both of them learned something from me, because I did definitely learn from them. I am particularly grateful to Vegard R. for being a large part in building the steady-state photo-capacitance setup used in this work. I also would like to thank all my co-authors from outside of Oslo: Frank from Dresden, Willem, Walter and Danie from Pretoria, Klaus and Zbigniew from Berlin, Antti from Aalto and Joel from California. Special thanks to Willem, Walter and Danie for hosting me in Pretoria and showing me around. Last but not least, I would like to thank my family and my friends for their support!

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Section: Capacitance-based Measurementsmentioning

confidence: 99%

Ti- and Fe-related charge transition levels in β−Ga2O3

Zimmermann

Frodason

Barnard

et al. 2020

Applied Physics Letters

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“…[25] A more direct approach, that can extract depth-resolved carrier concentration profiles, are C-V measurements. [26] Such measurements have been routinely used to investigate the accumulation of electrons in (Al,Ga)N/GaN heterostructures, [27][28][29] and are applied here with the coplanar contact geometry presented in Figure 4a on the samples with 0.4% and 0.35% La-doping of the BaSnO 3 channel layer after the deposition of 10 nm thick LaInO 3 .…”

Section: Confinement Of Electron At the Interface Demonstrated By C-v...mentioning

confidence: 99%

Confinement of Electrons at the LaInO₃/BaSnO₃ Heterointerface

Pfützenreuter

Kim

Cho

et al. 2022

Adv Materials Inter

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temperature mobility of 320 cm 2 V −1 s −1 at a carrier density of 8.0 × 10 19 cm −3 in a bulk single crystal. [8] Furthermore, BaSnO 3 is a transparent wide bandgap semiconductor with a bandgap of 3.1 eV, which makes it suitable for high power applications like field effect transistors (FET). [9] To exploit the full potential of a FET, a 2D electron gas (2DEG) with high carrier density and mobility is highly desirable. The formation of a 2DEG at the LaInO 3 /BaSnO 3 interface was found and studied experimentally by Kim et al. in 2016 and thereafter [10,11] and has been theoretically investigated using several models. [12][13][14] Analysis of the Seebeck coefficient as well as Poisson-Schrödinger simulations suggested a thickness of ≈1 nm for the 2DEG. [14] Recently, another similar polar interface, namely LaScO 3 /BaSnO 3 , has been investigated. [15,16] In this paper we report on the epitaxial growth of LaInO 3 / BaSnO 3 heterointerfaces using a SrSnO 3 buffer layer on NdScO 3 substrates. We provide clear evidence for the enhancement of the conductance at the LaInO 3 /BaSnO 3 interface for a compensated BaSnO 3 :La channel layer. More importantly, we report on the length scale of the charge accumulation at the heterointerface and with that further support the finding of a 2DEG at the heterointerface. We also present the low temperature electrical properties of the heterointerface, displaying reduced carrier density and increased mobility Results and Discussion Structural Properties of the HeterostructureA high-resolution X-ray diffraction (HRXRD) 2θ−ω scan around the (220) NdScO 3 Bragg reflection shows three contributions, which can be attributed to the BaSnO 3 and SrSnO 3 films as well as to the NdScO 3 substrate (see Figure 1a). The SrSnO 3 film peak appears at 44.7°, which corresponds to a vertical lattice parameter of 4.056 Å. This coincides with the expected vertical lattice parameter of a fully compressively strained film, which is obtained from linear elasticity theory under the assumption of a Poisson ratio of ν = 0.23 and a lattice mismatch of 0.5% in [1-10] direction and 0.8% in [001] direction of the NdScO 3 substrate. [17] An reciprocal space mappings (RSM) measurement (Figure 1c) in the vicinity of the asymmetric (332) NdScO 3 substrate reflection exhibits the SrSnO 3 contribution directly belowThe properties of the conductance at the LaInO 3 /BaSnO 3 heterointerface are reported. The heterointerface is formed by covering the semi-insulating BaSnO 3 :La thin films with 10 nm LaInO 3 films, which are all epitaxially grown on NdScO 3 substrates. Structural properties of BaSnO 3 thin films are investigated by means of X-ray diffraction and transmission electron microscopy and exhibit a threading dislocation density of 6 × 10 10 cm −2 . Via capacitance-voltage (C-V) measurements, clear evidence is present for the accumulation of electrons at the interface within 2.5 nm in the BaSnO 3 layer, confirming the formation of a 2D electron gas (2DEG). Additionally, temperature dependent Hall effect measurem...

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“…Various methods utilizing the equivalent circuit characteristics can be addressed for accurate determination of the capacitance and the herewith related material and device properties, as reported in previous and recent publications [44][45][46][47][48][49][50][51][52][53][54][55][56][57][58][59][60]. By application of CVM techniques, the capacitance C can be determined from the current in dependence of voltage I(V) characteristics using an equivalent circuit model to evaluate the resistances [46] or alternately fitted to the impedance complex function of a PIN-diode equivalent circuit [44]:…”

Section: Pin-diodes Based On Ingan/gan Dhs With 55% Inmentioning

confidence: 99%

Calibration of Polarization Fields and Electro-Optical Response of Group-III Nitride Based c-Plane Quantum-Well Heterostructures by Application of Electro-Modulation Techniques

Papadimitriou

2019

Applied Sciences

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The polarization fields and electro-optical response of PIN-diodes based on nearly lattice-matched InGaN/GaN and InAlN/GaN double heterostructure quantum wells grown on (0001) sapphire substrates by metalorganic vapor phase epitaxy were experimentally quantified. Dependent on the indium content and the applied voltage, an intense near ultra-violet emission was observed from GaN (with fundamental energy gap Eg = 3.4 eV) in the electroluminescence (EL) spectra of the InGaN/GaN and InAlN/GaN PIN-diodes. In addition, in the electroreflectance (ER) spectra of the GaN barrier structure of InAlN/GaN diodes, the three valence-split bands, Γ9, Γ7+, and Γ7−, could selectively be excited by varying the applied AC voltage, which opens new possibilities for the fine adjustment of UV emission components in deep well/shallow barrier DHS. The internal polarization field Epol = 5.4 ± 1.6 MV/cm extracted from the ER spectra of the In0.21Al0.79N/GaN DHS is in excellent agreement with the literature value of capacitance-voltage measurements (CVM) Epol = 5.1 ± 0.8 MV/cm. The strength and direction of the polarization field Epol = −2.3 ± 0.3 MV/cm of the (0001) In0.055Ga0.945N/GaN DHS determined, under flat-barrier conditions, from the Franz-Keldysh oscillations (FKOs) of the electro-optically modulated field are also in agreement with the CVM results Epol = −1.2 ± 0.4 MV/cm. The (absolute) field strength is accordingly significantly higher than the Epol strength quantified in published literature by FKOs on a semipolar ( 11 2 ¯ 2 ) oriented In0.12Ga0.88N quantum well.

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Capacitance-voltage profiling: Research-grade approach versus low-cost alternatives

Cited by 20 publications

References 32 publications

Ti- and Fe-related charge transition levels in β−Ga2O3

Ti- and Fe-related charge transition levels in β−Ga2O3

Confinement of Electrons at the LaInO₃/BaSnO₃ Heterointerface

Calibration of Polarization Fields and Electro-Optical Response of Group-III Nitride Based c-Plane Quantum-Well Heterostructures by Application of Electro-Modulation Techniques

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Capacitance-voltage profiling: Research-grade approach versus low-cost alternatives

Cited by 20 publications

References 32 publications

Ti- and Fe-related charge transition levels in β−Ga2O3

Ti- and Fe-related charge transition levels in β−Ga2O3

Confinement of Electrons at the LaInO3/BaSnO3 Heterointerface

Calibration of Polarization Fields and Electro-Optical Response of Group-III Nitride Based c-Plane Quantum-Well Heterostructures by Application of Electro-Modulation Techniques

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Confinement of Electrons at the LaInO₃/BaSnO₃ Heterointerface