Capacitance and conductance characterization of nano-ZnGa2Te4/n-Si diode

“…In V range of −5 to 5 V, both C – V – f and G/ω–V–f plots exhibit three regimes (inversion, depletion, and accumulation regions) . C is increased with the increment of V until it reaches into an accumulation region . At higher V , strong accumulation in our case is around 5 V .…”

Section: Resultsmentioning

confidence: 45%

“…At high f values (above 100 kHz), N ss was independent of f . The high C values at low f values were attributed to the excess C resulting from N ss , which is in equilibrium with the semiconductor that follows the AC signal . In contrast, the interface states in equilibrium with the semiconductor do not contribute to C at adequate f .…”

Section: Resultsmentioning

confidence: 98%

Production of p‐Type Si/n‐Type β‐FeSi₂ Heterojunctions Using Facing‐Targets Direct‐Current Sputtering and Evaluation of Their Resistance and Interface State Density

Chaleawpong

Promros

Charoenyuenyao

et al. 2018

Physica Status Solidi (a)

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Without a post-annealing procedure, the β-FeSi 2 thin films are epitaxially grown on Si(111) wafer substrates via facing-targets direct-current sputtering. During epitaxial growth, the temperature for heating of substrates is maintained at 600 C. The resultant p-type Si/n-type β-FeSi 2 heterojunctions are produced. At room temperature, a large leakage current under an applied reverse bias voltage together with a small photo-detective performance is observed from the measured dark and irradiated current density-voltage curves of the created heterojunctions. Both of the conductance-voltage (G/ ω-V) and capacitance-voltage (C-V) measurements at different frequencies (f ) in the range of 5 kHz-1 MHz are performed in the dark at room temperature. The interface state density (N ss ) and series resistance (R s ) in the created p-type Si/n-type β-FeSi 2 heterojunctions are computed and analyzed from the measured C-V-f and G/ω-V-f curves. N ss is found to be 3.48 Â 10 12 eV À1 cm À2 at 5 kHz and decreased to 4.68 Â 10 11 eV À1 cm À2 at 1 MHz. Moreover, the values of R s at zero bias are 2.21 kΩ at 5 kHz and 13.66 Ω at 1 MHz. These results review the presence of N ss and R s in the created heterojunctions, and they can be the cause to degrade the heterojunction performance.

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“…At the sufficiently high frequencies, the N ss can follow the ac signal. Therefore, the contribution of interface states capacitance to the total capacitance can be neglected [41][42][43][44][45][46]. Moreover, the C-V plots give a peak.…”

Section: Capacitance-voltage and Conductance-voltage Characteristicsmentioning

confidence: 99%

Graphene–cobalt phthalocyanine based on optoelectronic device for solar panel tracking systems

et al. 2015

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Capacitance and conductance characterization of nano-ZnGa2Te4/n-Si diode

Cited by 28 publications

References 52 publications

Samarium oxide thin films deposited by reactive sputtering: Effects of sputtering power and substrate temperature on microstructure, morphology and electrical properties

Samarium oxide thin films deposited by reactive sputtering: Effects of sputtering power and substrate temperature on microstructure, morphology and electrical properties

Production of p‐Type Si/n‐Type β‐FeSi₂ Heterojunctions Using Facing‐Targets Direct‐Current Sputtering and Evaluation of Their Resistance and Interface State Density

Graphene–cobalt phthalocyanine based on optoelectronic device for solar panel tracking systems

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Capacitance and conductance characterization of nano-ZnGa2Te4/n-Si diode

Cited by 28 publications

References 52 publications

Samarium oxide thin films deposited by reactive sputtering: Effects of sputtering power and substrate temperature on microstructure, morphology and electrical properties

Samarium oxide thin films deposited by reactive sputtering: Effects of sputtering power and substrate temperature on microstructure, morphology and electrical properties

Production of p‐Type Si/n‐Type β‐FeSi2 Heterojunctions Using Facing‐Targets Direct‐Current Sputtering and Evaluation of Their Resistance and Interface State Density

Graphene–cobalt phthalocyanine based on optoelectronic device for solar panel tracking systems

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Product

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Production of p‐Type Si/n‐Type β‐FeSi₂ Heterojunctions Using Facing‐Targets Direct‐Current Sputtering and Evaluation of Their Resistance and Interface State Density