C3H6N6 doping effect of synthetic diamond under high pressure and high temperature

Wang, Junzhuo; Li, Shangsheng; Hu, Meihua; Su, Taichao; Gao, Guangjin; Guo, Mingming; You, Yue; Nie, Yuan

doi:10.1016/j.ijrmhm.2019.105150

Cited by 16 publications

(13 citation statements)

References 36 publications

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“…Infrared spectroscopy is commonly utilized to provide information about impurity elements and defect types in diamonds . The nitrogen element and carbon element are adjacent to each other, and their atomic radius is similar . During the high-temperature and high-pressure crystal synthesis, this adjacency allows nitrogen to enter the diamond lattice along with carbon in the presence of a molten catalyst and becomes the most critical impurity element in the crystal.…”

Section: Resultsmentioning

confidence: 99%

“…30 The nitrogen element and carbon element are adjacent to each other, and their atomic radius is similar. 31 During the high-temperature and high-pressure crystal synthesis, this adjacency allows nitrogen to enter the diamond lattice along with carbon in the presence of a molten catalyst and becomes the most critical impurity element in the crystal. In this experiment, a Fourier transform infrared spectrometer was used to detect and analyze the nitrogen content in silicon-doped diamond and verify the above hypothesis.…”

Section: The Effect Of Si Content On Nitrogen Concentration In Diamondmentioning

confidence: 99%

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Synthesis and Characterization of Fe–C–Si System Ib-Type Gem-Grade Diamond Single Crystals under High Temperature and Pressure

Liu,

Wang,

et al. 2023

Crystal Growth & Design

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Section: Resultsmentioning

confidence: 99%

Section: The Effect Of Si Content On Nitrogen Concentration In Diamondmentioning

confidence: 99%

Synthesis and Characterization of Fe–C–Si System Ib-Type Gem-Grade Diamond Single Crystals under High Temperature and Pressure

Liu,

Wang,

et al. 2023

Crystal Growth & Design

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“…Filiform defects did not affect the C–C bond vibrations in diamond. The FTIR peaks at 1130 cm –1 , 1344 cm –1 , and 2688 cm –1 were attributed to isolated nitrogen (C-center nitrogen) in diamond. − The C-center nitrogen concentration in diamond could be estimated by the following formula: − where μ is the corrected coefficients and can be determined by following formula: where A is the absorption intensity of the relevant peaks in the FTIR spectra. The concentration of nitrogen in diamonds obtained from E-2, E-4 to E-6 was estimated to be 264, 260, 237, and 246 ppm, respectively, with about 10% uncertainty.…”

Section: Resultsmentioning

confidence: 99%

Defect and Stress Reduction in High-Pressure and High-Temperature Synthetic Diamonds Using Gradient Cooling Technology

Chen

Zhang

et al. 2020

Crystal Growth & Design

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In order to eliminate filiform defects in high-pressure and high-temperature synthetic diamonds, we have developed a gradient cooling technology and applied it during the synthesis assembly cooling process used during the later stage of diamond synthesis. Finite element simulations showed that the von Mises stress at the end of the synthesis process varied greatly inside the diamond. The rapid thermoelastic stress relief and higher thermoelastic stress generated inside the diamond during rapid cooling of synthesis assembly were the root causes of filiform defects, which were completely eliminated from the diamond interior at a gradient cooling time of 300 min. Raman measurements indicated that the crystalline quality was higher and the compressive stress was lower in the diamond obtained using gradient cooling technology than in the diamond obtained using the traditional rapid cooling technology. This work improves the understanding of the origin of filiform defects in diamond and also provides an effective method for obtaining high-quality diamonds.

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“…The presence of these impurities in the crystal will significantly affect the properties of diamond. [2][3][4][5][6] In particular, the nitrogen content in diamonds would strongly affect their physical and chemical properties. [6] According to the concentration and existing forms of N and B atoms, diamonds are classified into type Ia (IaA and IaB), type Ib, type IIa and type IIb.…”

Section: Introductionmentioning

confidence: 99%

Growth characteristics of type IIa large single crystal diamond with Ti/Cu as nitrogen getter in FeNi–C system*

Guo

et al. 2020

Chinese Phys. B

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High-quality type IIa large diamond crystals are synthesized with Ti/Cu as nitrogen getter doped in an FeNi–C system at temperature ranging from 1230 °C to 1380 °C and at pressure 5.3–5.9 GPa by temperature gradient method. Different ratios of Ti/Cu are added to the FeNi–C system to investigate the best ratio for high-quality type IIa diamond. Then, the different content of nitrogen getter Ti/Cu (Ti : Cu = 4 : 3) is added to this synthesis system to explore the effect on diamond growth. The macro and micro morphologies of synthesized diamonds with Ti/Cu added, whose nitrogen concentration is determined by Fourier transform infrared (FTIR), are analyzed by optical microscopy (OM) and scanning electron microscopy (SEM), respectively. It is found that the inclusions in the obtained crystals are minimal when the Ti/Cu ratio is 4:3. Furthermore, the temperature interval for diamond growth becomes narrower when using Ti as the nitrogen getter. Moreover, the lower edge of the synthesis temperature of type IIa diamond is 25 °C higher than that of type Ib diamond. With the increase of the content of Ti/Cu (Ti : Cu = 4 : 3), the color of the synthesized crystals changes from yellow and light yellow to colorless. When the Ti/Cu content is 1.7 wt%, the nitrogen concentration of the crystal is less than 1 ppm. The SEM results show that the synthesized crystals are mainly composed by (111) and (100) surfaces, including (311) surface, when the nitrogen getter is added into the synthesis system. At the same time, there are triangular pits and dendritic growth stripes on the crystal surface. This work will contribute to the further research and development of high-quality type IIa diamond.

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C3H6N6 doping effect of synthetic diamond under high pressure and high temperature

Cited by 16 publications

References 36 publications

Synthesis and Characterization of Fe–C–Si System Ib-Type Gem-Grade Diamond Single Crystals under High Temperature and Pressure

Synthesis and Characterization of Fe–C–Si System Ib-Type Gem-Grade Diamond Single Crystals under High Temperature and Pressure

Defect and Stress Reduction in High-Pressure and High-Temperature Synthetic Diamonds Using Gradient Cooling Technology

Growth characteristics of type IIa large single crystal diamond with Ti/Cu as nitrogen getter in FeNi–C system*

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