Butt-coupled MOVPE growth for high-performance electro-absorption modulator integrated with a DFB laser

Cheng, Yuanbing; Pan, Jiaoqing; Liu, Song; Wu, Feng; Zai-Yi, Liao; Zhang, Fan; Zhao, Lingjuan; Zhu, Hongtu; Wang, Wei

doi:10.1016/j.jcrysgro.2007.09.004

Cited by 7 publications

(3 citation statements)

References 14 publications

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“…To cope with the demand for huge data capabilities in Internet and associated data-driven applications, 100-Gb/s transmission technology has been widely considered as a strong candidate for next-generation terabit per second communication networks [1]. The Electroabsorption Modulated Laser (EML) has attracted much attention due to its compactness, low packaging cost, low driving voltage and high stability [2][3][4][5][6][7]. Monolithically integrated EML arrays are promising light sources for modern reconfigurable dense wavelength division multiplexing (DWDM) systems.…”

Section: Introductionmentioning

confidence: 99%

155 µm high speed low chirp electroabsorption modulated laser arrays based on SAG scheme

2014

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We demonstrate a cost-effective 1.55 µm low chirp 4 × 25 Gbit/s electroabsorption modulated laser (EML) array with 0.8 nm channel spacing by varying ridge width of the lasers and using selective area growth (SAG) integration scheme. The devices for all the 4 channels within the EML array show uniform threshold currents around 18 mA and high SMSRs over 45 dB. The output optical power of each channel is about 9 mW at an injection current of 100 mA. The typical chirp value of single EML measured by a fiber resonance method varied from 2.2 to -4 as the bias voltage was increased from 0 V to 2.5 V. These results show that the EML array is a suitable light source for 100 Gbit/s optical transmissions.

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Section: Introductionmentioning

confidence: 99%

155 µm high speed low chirp electroabsorption modulated laser arrays based on SAG scheme

2014

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“…Numerous methods have been investigated to create an InGaAsP/InP monolithically integrated platform with both active (material with optical gain) and passive (material with low propagation loss) sections. These include butt-joint regrowth [1], selective area regrowth (SAG) [2], and quantum-well disordering [3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19], often referred to as quantum-well intermixing (QWI), in which the quantum well and barrier compositions are interdiffused.…”

Section: Introductionmentioning

confidence: 99%

Regrowth-free high-gain InGaAsP/InP active-passive platform via ion implantation

et al. 2012

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We demonstrate a regrowth-free material platform to create monolithic InGaAsP/InP photonic integrated circuits (PICs) with high-gain active and low-loss passive sections via a PL detuning of >135 nm. We show 2.5 µm wide by 400 µm long semiconductor optical amplifiers with >40 dB/mm gain at 1570 nm, and passive waveguide losses <2.3 dB/mm. The bandgap in the passive section is detuned using low-energy 190 keV channelized phosphorous implantation and subsequent rapid thermal annealing to achieve impurity-induced quantum well intermixing (QWI). The PL wavelengths in the active and passive sections are 1553 and 1417 nm, respectively. Lasing wavelengths for 500 µm Fabry-Perot lasers are 1567 and 1453 nm, respectively.

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“…Chapter 1 An Overview of the Thesis: Background, Objectives & Significant Contributions InGaAlAs/InAlAs [35][36][37] and the InGaAsP/InGaAsP[ [4,7,29,38,39] Zhao, 2006Okayasu, 2004Cheng, 2007 Shared active layer Saravanan, 2006 Stand-alone device Tamura, 2004Choi, 2002Mason, 2002Chiu, 2005 Ref. [ As this dissertation is focused on the integration of passive (MMI) and active devices, we give below a literature review of the MMI device.…”

Section: Electroabsorption Modulator (Eam)mentioning

confidence: 99%

Multimode interference devices and integration with electroabsorption modulators for photonic integrated circuits

Lee¹

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This thesis would not have been realized without the assistance of many parties. I would like to thank my first advisor, the late Prof. Chin Mee Koy for making everything possible in the first place by accepting me as his student. Throughout my first five years, under his kind tutelage and advice, the project had taken form and blossomed to what it is today. I am also very grateful to Dr. Mei Ting for taking me under his wings for the remainder of my PhD and under his guidance, this dissertation is finally completed. I am also eternally grateful for the great team of researchers I have been working with, namely, Lee Chee Wei, my 'senior' by half a year, whose patience and calm outlook has a force of its own to temper down my often more rash and impulsive actions; Stevanus Darmawan, whose inquisitive nature had influenced me greatly to be more adventurous in my research. His attention to details and perseverance in investigating his projects has taught me to take pride in fine-tuning things, be it in research or in perfecting a figure. Landobasa Y.M.A.T., an enigma when it comes to his high grasp of all things mathematical and theoretical, has also greatly motivated me to overcome my fears of equations. His infinite streams of ideas are often the tide that has saved me, be it in getting unstuck from a dead end or infusing new angle of approach and research. Research fellows Dr. Xu Chendong and Dr.Yang Hua are the lifelines that I have often cling to in matters regarding fabrication. Their vast amount of practical experience has also helped reveal to me the solutions to many a problem. Although my years in NTU had been peppered with ephemeral acquaintances, the short time with them had also been wonderful, our brief conversations and co-operations often stirring the calm waters and bringing in a breath of fresh air at 'old' things. These wonderful people are Mohd. Hanif Ibrahim of USM (Malaysia), Dr Zhang Xiao of SimTech and Li Yicen and Zhao Qiu Ji of NTU, among many others. Thank you.

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Butt-coupled MOVPE growth for high-performance electro-absorption modulator integrated with a DFB laser

Cited by 7 publications

References 14 publications

155 µm high speed low chirp electroabsorption modulated laser arrays based on SAG scheme

155 µm high speed low chirp electroabsorption modulated laser arrays based on SAG scheme

Regrowth-free high-gain InGaAsP/InP active-passive platform via ion implantation

Multimode interference devices and integration with electroabsorption modulators for photonic integrated circuits

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