Bulk driven OTA in 0.18 micron with high linearity

Raj, Nikhil; Gupta, Ranitesh; Chopra, Vikram

doi:10.1109/iccsit.2010.5564103

Cited by 1 publication

(4 citation statements)

References 8 publications

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“…The techniques reported in pervious literature for low power input transconductor are: -a) Floating gate MOS differential pair [10,12]. b) Bulk driven MOS differential pair [5,14]. c) Pseudo differential MOS transconductor [8,11].…”

Section: Transconductance Power Minimization Linearity Enhancemenmentioning

confidence: 99%

“…Using this technique, transistor can remain in active mode even at zero-input bias voltage and also significant improvement in input common-mode range (ICMR) can be observed. However, there are few drawbacks in bulk-driven transistors like one most important drawback is its low dc gain [5]. The current expression for well-input MOS transistor in sub-threshold mode is given by:…”

Section: B Bulk Driven Low Power Techniquementioning

confidence: 99%

“…A bias current generator circuit is attached to OTA which generates current in the range of nano-amperes. This paper [5] explored the approach of low-voltage OTA design using the bulk-driven technique and enhancement of gain through Wilson mirror. The design of such low voltage, high performance OTA circuit on TSMC 0.18 micron technology satisfies the required parameters for its implementation not only in power-saving devices but also in biomedical portable devices like biomedical implantable sensors, disk read channel integrated circuits (ICs), video filters, ADSL front-ends, and RF ICs.…”

Section: B Bulk Driven Low Power Techniquementioning

confidence: 99%

“…Assuming the drain current of an MOS transistor obeys the square law characteristics, ID of M1-M4 are expressed as Where Vs is negative supply and KN is an ideal transconductance factor, VTHN is the threshold voltage of M1-M4, respectively. The output current Iout is expressed as Assuming that the input voltage is a fully differential signal, the input voltage Vin is expressed as From equation(2)-(4), the relation between the input voltage Vin and the output current Iout is expressed as From equation(5) Gm is determined by the transconductance factor KN of M1-M4 and the bias voltage VB. Thus the transconductance is the linear function of output current which governs the linear relationship between input voltage and output current.…”

mentioning

confidence: 99%

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A Review on Low Power Designs of Operational Transconductance Amplifier with Linearity Techniques

Poddar¹,

Ali²

2015

IJERT

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In this paper the relationship among power consumption and linearity performance of CMOS OTA for RF applications are studied, that are illustrated in different literatures. Comparison among the OTA are done in terms their linearity, technology, supply voltage, power consumption, current consumption, open loop dc gain and unity gain frequency. This paper helps the future researchers to design better OTA in terms of linearity, low power consumption and high frequency of operation.

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