Broadband Photoresponse Enhancement of a High‐Performance t‐Se Microtube Photodetector by Plasmonic Metallic Nanoparticles

Abstract

Broadband responsivity enhancement of single Se microtube (Se‐MT) photodetectors in the UV–visible region is presented in this research. The pristine Se‐MT photodetector demonstrates broadband photoresponse from 300 to 700 nm with peak responsivity of ≈19 mA W−1 at 610 nm and fast speed (rise time 0.32 ms and fall time 23.02 ms). To further enhance the responsivity of the single Se‐MT photodetector, Au and Pt nanoparticles (NPs) are sputtered on these devices. In contrast to only enhancement of responsivity in UV region by Pt NPs, broadband responsivity enhancement (≈600% to ≈800%) of the Se‐MT photodetector is realized from 300 to 700 nm by tuning the size and density of Au NPs. The broadband responsivity enhancement phenomena are interpreted by both the surface modification and surface plasmon coupling. The experimental results of this work provide an additional opportunity for fabricating high‐performance UV–visible broadband photodetectors.

Influence of Al content on ZnO/Al bilayer-structure ultraviolet photodetector

“…As the sputtering time increases from 0 to 120 s, the roughness increases and reaches a maximum at 60 s, then decreases. This rule is consistent with the formation process of thin film by the magnetron sputtering method [13]. The sapphire substrate without Al has a high flatness with a roughness of 1.1 nm.…”

“…Figure 1(a) shows the average roughness of the Al/sapphire structure with different Al sputtering time: 0, 60, 90 and 120 s. Atomic force microscopy (AFM) images are shown in the insets of figure 1(a).As the sputtering time increases from 0 to 120 s, the roughness increases and reaches a maximum at 60 s, then decreases. This rule is consistent with the formation process of thin film by the magnetron sputtering method[13]. The sapphire substrate without Al has a high flatness with a roughness of 1.1 nm.…”

High-Performance Silicon-Compatible Large-Area UV-to-Visible Broadband Photodetector Based on Integrated Lattice-Matched Type II Se/n-Si Heterojunctions

“…The EQE data remain stable in the range of 350 to 630 nm and decrease sharply after 630 nm (Figure 3f), resulting in a cutoff wavelength of approximately 690 nm. This shows quite a similar spectral photoresponse to that of Sebased MSM devices, 18 indicating that Se/Si generally maintains the cutoff wavelength of selenium materials. The responsivity slightly shifts red but generally maintains its shape as the bias voltage increases (Figure S12).…”

Self-template Synthesis of Metal Halide Perovskite Nanotubes as Functional Cavities for Tailored Optoelectronic Devices

“…The responsivity R is calculated according to the following equation where I ph is the difference between the light current and dark current ( I ph = I light – I dark ), P 0 is the irradiance power density on the NTs, and S is the effective illuminated area. The pure CsPbBr 3 NT device shows high photoresponse with a maximum peak responsivity of about 116 A W –1 under 510 nm at a bias of 2 V, significantly higher than the photoresponse of other NT-based devices, ,, which is attributed to their strong visible light absorptivity and large carrier diffusion length . Additionally, the stability is critical for examining the performance of photodetector devices.…”