Breakdown of High-Performance Monolayer MoS<sub>2</sub> Transistors

Lembke, Dominik; Kis, András

doi:10.1021/nn303772b

Cited by 377 publications

(313 citation statements)

References 36 publications

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“…In this respect, the semiconducting transition metal dichalcogenides (TMDs) can complement or substitute the zero-band gap material graphene [9]. Singlelayer MoS 2 is an appealing alternative for opto-electronic applications with an optical gap of 1.8-1.9 eV, high quantum efficiency [10,11], an acceptable value for the electron mobility [12,13], and a low power of dissipation [14]. It has potential application in nanoscale transitors [9,15,12,8], photodetectors [16,17], and photovoltaics applications [18,19,20].…”

Section: Introductionmentioning

confidence: 99%

Vibrational and optical properties of MoS2: From monolayer to bulk

Molina-Sánchez

Hummer

Wirtz

2015

Surface Science Reports

208

167

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Molybdenum disulfide, MoS 2 , has recently gained considerable attention as a layered material where neighboring layers are only weakly interacting and can easily slide against each other. Therefore, mechanical exfoliation allows the fabrication of single and multi-layers and opens the possibility to generate atomically thin crystals with outstanding properties. In contrast to graphene, it has an optical gap of 1.9 eV. This makes it a prominent candidate for transistor and opto-electronic applications. Single-layer MoS 2 exhibits remarkably different physical properties compared to bulk MoS 2 due to the absence of interlayer hybridization. For instance, while the band gap of bulk and multi-layer MoS 2 is indirect, it becomes direct with decreasing number of layers. In this review, we analyze from a theoretical point of view the electronic, optical, and vibrational properties of single-layer, few-layer and bulk MoS 2 . In particular, we focus on the effects of spinorbit interaction, number of layers, and applied tensile strain on the vibrational and optical properties. We examine the results obtained by different methodologies, mainly ab initio approaches. We also discuss which approximations are suitable for MoS 2 and layered materials. The effect of external strain on the band gap of single-layer MoS 2 and the crossover from indirect to direct band gap is investigated. We analyze the excitonic effects on the absorption spectra. The main features, such as the double peak at the absorption threshold and the high-energy exciton are presented. Furthermore, we report on the phonon dispersion relations of single-layer, few-layer and bulk MoS 2 . Based on the latter, we explain the behavior of the Raman-active A 1g and E 1 2g modes as a function of the number of layers. Finally, we compare theoretical and experimental results of Raman, photoluminescence, and optical-absorption spectroscopy.

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Section: Introductionmentioning

confidence: 99%

Vibrational and optical properties of MoS2: From monolayer to bulk

Molina-Sánchez

Hummer

Wirtz

2015

Surface Science Reports

208

167

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“…We also measure an increase in the band linewidth from the midpoint of ΓΚ to the vicinity of Κ and briefly discuss its possible origin. Two-dimensional (2D) crystals of monolayer transition metal dichalcogenides (TMD) are of increasing interest both for their unusual physics and for their potential use in novel nanoelectronic devices [1,2]. In particular, their substantial intrinsic bandgap of 1.3-1.9eV [3], which is thickness dependent, makes them a promising alternative to the most well studied 2D material, graphene, which lacks an intrinsic bandgap.…”

Section: Introductionmentioning

confidence: 99%

Substrate interactions with suspended and supported monolayerMoS2: Angle-resolved photoemission spectroscopy

et al. 2015

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“…The saturation behavior in the monolayer MoS 2 FETs has been observed at a high carrier density induced by a top-gating scheme. [4,25] The linear I D -V eg behavior indicates that the sample has a constant mobility and its carrier density n increases linearly with ΔV eg  V eg − V th , i.e., n ≈ C eg ΔV eg /e. The PE-encapsulated device displays a linear I D -V eg slope of g m ≈ 30 µA V −1 giving rise to µ ≈ 38 cm 2 V −1 s −1 .…”

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confidence: 99%

Controlled Low‐Frequency Electrical Noise of Monolayer MoS₂ with Ohmic Contact and Tunable Carrier Concentration

Wang

Liu

Chen

et al. 2017

Adv Elect Materials

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and unique band structures. [1] Semiconducting monolayers of the TMDs, such as MoS 2 and WSe 2 , possess a direct band gap and excellent photoresponsivity. [2,3] In addition, single-layer MoS 2 is moderately easy to attain Ohmic contact with various metals [4][5][6][7] and graphene, [8] and the singlelayer MoS 2 field-effect transistors (FETs) show decent performances on the mobility (tens of cm 2 V −1 s −1 ) [9,10] and the on-off current ratio (exceeding 10 8 ) [4,10] at room temperature, suggesting that the monolayer MoS 2 holds greater potential for flexible nanodevices and optoelectronic applications. The huge surface-to-volume ratio of the atomically thin TMDs makes their performances extremely sensitive to the surface and interface conditions. The low-frequency electrical noise of devices often discloses the influences from the surface [11] and the interface conditions and has been widely adopted as a nondestructive tool to study the interface conditions. The subthreshold slope of the FETs and the photo response time of the MoS 2 photodetectors are significantly determined by the interfacial traps. [12] Unlike the thermal noise and shot noise that possess a constant power spectral density, low-frequency noise typically has a 1/f spectrum, and its effect on the accuracy of a device cannot be reduced by increasing the averaging time. [13] Such noise manner causes a critical issue of applications of the TMDs in the signal sensing and processing, [14] and raises numerous interests in investigating the 1/f noise in the TMD-based devices for identifying its origin and for reducing its strength.The first study of low-frequency electrical noise in exfoliated monolayer MoS 2 [15] claimed that the noise has a 1/f spectrum and is mainly explained by fluctuation of the mobility. By contrast, the 1/f noise in the exfoliated MoTe 2[16] with the ambipolar transport behaviors and many other TMD FETs [17][18][19][20] is further described as fluctuation of the carrier density. Finding a clear picture of the possible factors contributing to the 1/f noise, including the external adsorbates on the devices, [15] the defect states at the metal/TMD contacts, [17] and the trappingdetrapping centers in the substrate near the TMD channel, [18,21] remains a challenging issue because of the lack of Ohmic contacts, ideal material quality, and an effective control of the carrier density. Recently, the high-quality chemical-vapor-deposited (CVD) MoS 2 monolayers show the comparable electrical

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Breakdown of High-Performance Monolayer MoS₂ Transistors

Cited by 377 publications

References 36 publications

Vibrational and optical properties of MoS2: From monolayer to bulk

Vibrational and optical properties of MoS2: From monolayer to bulk

Substrate interactions with suspended and supported monolayerMoS2: Angle-resolved photoemission spectroscopy

Controlled Low‐Frequency Electrical Noise of Monolayer MoS₂ with Ohmic Contact and Tunable Carrier Concentration

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Breakdown of High-Performance Monolayer MoS2 Transistors

Cited by 377 publications

References 36 publications

Vibrational and optical properties of MoS2: From monolayer to bulk

Vibrational and optical properties of MoS2: From monolayer to bulk

Substrate interactions with suspended and supported monolayerMoS2: Angle-resolved photoemission spectroscopy

Controlled Low‐Frequency Electrical Noise of Monolayer MoS2 with Ohmic Contact and Tunable Carrier Concentration

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Breakdown of High-Performance Monolayer MoS₂ Transistors

Controlled Low‐Frequency Electrical Noise of Monolayer MoS₂ with Ohmic Contact and Tunable Carrier Concentration