Bottom‐Up Fabrication of Semiconductive Metal–Organic Framework Ultrathin Films

Abstract

Though generally considered insulating, recent progress on the discovery of conductive porous metal-organic frameworks (MOFs) offers new opportunities for their integration as electroactive components in electronic devices. Compared to classical semiconductors, these metal-organic hybrids combine the crystallinity of inorganic materials with easier chemical functionalization and processability. Still, future development depends on the ability to produce high-quality films with fine control over their orientation, crystallinity, homogeneity, and thickness. Here self-assembled monolayer substrate modification and bottom-up techniques are used to produce preferentially oriented, ultrathin, conductive films of Cu-CAT-1. The approach permits to fabricate and study the electrical response of MOF-based devices incorporating the thinnest MOF film reported thus far (10 nm thick).

Synthesis of Bimetallic Conductive 2D Metal–Organic Framework (CoxNiy‐CAT) and Its Mass Production: Enhanced Electrochemical Oxygen Reduction Activity

“…Lastly, the formation of a 2D layered hexagonal M‐CAT structure was visibly confirmed from the high‐resolution transmission electron microscopy (HRTEM) images that showed the characteristic lattice fringes. As shown in Figure b,c, HRTEM images of Co 0.27 Ni 0.73 ‐CAT showed the hexagonal pattern in the ab plane as well as the lined patterns parallel to the c ‐axis, both of which are characteristic for the M‐CAT structure . HRTEM images also revealed characteristic d‐spacing values of 2.20 and 1.91 nm, where 2.20 nm represents the distance between two hexagonal pores and the a cell parameter (see Figure d,e for the related chemical structures).…”

2D Semiconducting Metal–Organic Framework Thin Films for Organic Spin Valves

“…Thegrowth of the Cu 3 (HHTP) 2 film on quartz glass was monitored by UV/Vis spectra measurement ( Figure 2b; Supporting Information, Figure S1). Thec haracteristic absorbance at 363 nm (p-p*t ransition) and 648 nm (ligandto-metal charge-transfer band) [24] intensified with increasing growth cycles.T he thickness of the Cu 3 (HHTP) 2 film was proportional to the number of cycles ( Figure 2c;S upporting Information, Figure S2), at ag rowth rate of about 5nmp er cycle.A tomic force microscopy (AFM) and scanning electronic microscopy (SEM) images confirm the continuity and good coverage of the Cu 3 (HHTP) 2 film (Supporting Information, Figures S2, S3).…”

In Situ Decorating Coordinatively Unsaturated Fe Sites for Boosting Water Oxidation Performance of TiO2 Photoanode

“…This unique phenomena can confirm that the in situ decoration of the MOF matrix could bring strong grafted bond between MIL‐100(Fe) and TiO 2 , which significantly benefits for depressing the roles of defect at interface. However, the ultrathin structure further reduces the conductive problem of the MIL‐100(Fe) matrix . The integrated factors of this kind heterostructure finally induces the desirable carrier density.…”

“…However, the ultrathin structure further reduces the conductive problem of the MIL-100(Fe) matrix. [68,69] The integrated factors of this kind heterostructure finally induces the desirable carrier density.…”