MRS Proc. 2000 DOI: 10.1557/proc-610-b10.2 View full text
C. D. Lindfors, K. S. Jones, M. E. Law, D. F. Downey, R. W. Murto

Abstract: AbstractTo continue scaling dimensions of transistors, higher dopant concentration levels are needed for ultra-shallow contacts. Therefore studies of dopant activation have been performed in preamorphized silicon wafers with various boron implant conditions to determine the maximum achievable dopant concentrations after Solid Phase Epitaxial Regrowth (SPER) alone. In the first experiment a silicon piece was preamorphized with a 30 keV, 1×1015 cm−2 and 90 keV, 1×1015 cm−2 Si+ implant followed by a 30 keV, 1×101…

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