C. D. Lindfors, K. S. Jones, M. E. Law, D. F. Downey, R. W. Murto
Abstract:AbstractTo continue scaling dimensions of transistors, higher dopant concentration levels are needed for ultra-shallow contacts. Therefore studies of dopant activation have been performed in preamorphized silicon wafers with various boron implant conditions to determine the maximum achievable dopant concentrations after Solid Phase Epitaxial Regrowth (SPER) alone. In the first experiment a silicon piece was preamorphized with a 30 keV, 1×1015 cm−2 and 90 keV, 1×1015 cm−2 Si+ implant followed by a 30 keV, 1×101…
scite is a Brooklyn-based startup that helps researchers better discover and evaluate scientific articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by researchers from dozens of countries and is funded in part by the National Science Foundation and the National Institute of Drug Abuse of the National Institutes of Health.