Boosting β-Ga<sub>2</sub>O<sub>3</sub> Solar-Blind Detector via Highly Photon Absorbance and Carrier Injection by Localized Surface Plasmon Resonance

Liu, Zeng; Sha, Shulin; Shen, Gao-Hui; Jiang, Mingming; Zhang, Maolin; Guo, Yufeng; Tang, W.H.

doi:10.1109/led.2023.3287852

Cited by 15 publications

(4 citation statements)

References 31 publications

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“…This material has captured considerable attention within the realm of optoelectronic devices and power systems due to its unique properties [16,17]. Ga 2 O 3 has already demonstrated its utility in solar-blind deep-ultraviolet (DUV) detectors, owing to its fixed bandgap that aligns with specific wavelengths [18][19][20]. However, this fixed bandgap limitation restricts its adaptability to a narrow range of applications [21].…”

Section: Introductionmentioning

confidence: 99%

Substrate temperature dependent crystal structure and deep-ultraviolet photodetection of ZnGa₂O₄ thin films^*

Liu,

Li,

Zhang

et al. 2024

Phys. Scr.

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Zinc gallate (ZnGa2O4) is a promising material for deep-ultraviolet (DUV) photodetectors, owing to its wide bandgap and high transparency. However, the effect of substrate temperature on the structural and optical properties of ZnGa2O4 thin films prepared by magnetron sputtering is not well understood. Here, we report a systematic study of the influence of substrate temperature on the crystal quality, stoichiometry, bandgap, and photodetection performance of ZnGa2O4 thin films deposited on sapphire substrates. We find that the films undergo a phase transition from amorphous to polycrystalline at 300°C, and then to single crystalline at 500°C, accompanied by an increase in the bandgap from 4.6 to 4.9 eV. We also fabricate metal-semiconductor-metal photodetectors based on the ZnGa2O4 thin films with Ti/Au electrodes, which exhibit excellent Ohmic contact and high light-to-dark current ratio. The photodetectors show remarkable and stable DUV response, with the highest performance achieved at a substrate temperature of 650°C. Our results demonstrate the crucial role of substrate temperature in tailoring the crystal structure and DUV photodetection of ZnGa2O4 thin films, and provide a facile route for optimizing their performance.

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Section: Introductionmentioning

confidence: 99%

Substrate temperature dependent crystal structure and deep-ultraviolet photodetection of ZnGa₂O₄ thin films^*

Liu,

Li,

Zhang

et al. 2024

Phys. Scr.

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“…In recent years, researchers have carried out in-depth studies on Ga 2 O 3 -based solar-blind UV PDs, and one of the main aspects is the tuning and optimization of their detection performance; towards actual employments [14][15][16]. The surface is one of the most important core parts of the device, and the modification of the surface will change the device performance to a great extent [17][18][19]. Since the surface is the main section for carrier transports and signal capturing in devices.…”

Section: Introductionmentioning

confidence: 99%

Tunable Ga₂O₃ solar-blind photosensing performance via thermal reorder engineering and energy-band modulation

Xi,

Yan,

Liu

et al. 2023

Nanotechnology

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As an ultra-wide bandgap semiconductor, gallium oxide (Ga2O3) has been extensively applied in solar-blind photodetectors (PDs) owing to the absorbance cut-off wavelength of shorter than 280 nm, and the optimized technologies of detection performance is seriously essential for its further usages. Herein, a feasible thermal reorder engineering method was performed through annealing Ga2O3 films in vacuum, O2 and oxygen plasma atmospheres, realizing to tune solar-blind photosensing performance of Ga2O3 PDs. Thermal treatment, in fact a crystal reorder process, significantly suppressed the noise in Ga2O3-based PDs and enhanced the photo-sensitivity, with the dark current decreasing from 154.63 pA to 269 fA and photo-to-dark current ratio magically raising from 288 to 2.85 × 104. This achievement is dependent of energy-band modulation in Ga2O3 semiconductor, that is certified by first-principles calculation. Additionally, annealing in oxygen atmospheres notably reduces the concentration of oxygen vacancies in the surface of films, thereby improving the performance of the PDs; the oxygen vacancy is extremely concerned in oxide semiconductors in the view of physics of surface defects. In all, this work could display a promising guidance for modulating the performance of PDs based on wide bandgap oxide semiconductor, especially for hot Ga2O3 issue.

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“…6−9 However, the wide bandgap also results in low conductivity, causing electrical signals arising from PDs that are always too weak to be transmitted in practical applications. 10,11 Moreover, the bandgap of Ga 2 O 3 restricts the detecting wavelength of PDs to be only about onethird of the solar-blind waveband, failing to achieve full range detection for the solar-blind UV light, which results in limitations in practical applications, such as the inability to accurately match the absorption peak wavelength of the given microorganism or molecule in biochemical sensors. 12−15 In addition, controllable bandgap tuning is very beneficial for the construction of heterojunctions.…”

mentioning

confidence: 99%

“…Solar-blind photodetectors (PDs), operating in a waveband from 200 to 280 nm, are widely applied in many civil and military fields for their high resistance to natural light (400–760 nm), low background noise, and high detection accuracy. − Gallium oxide (Ga 2 O 3 ) is considered to be a promising material for solar-blind PDs with an ultrawide bandgap of ∼4.9 eV because the cutoff wavelength of the absorption spectrum is exactly located in the solar-blind ultraviolet (UV) waveband. − However, the wide bandgap also results in low conductivity, causing electrical signals arising from PDs that are always too weak to be transmitted in practical applications. , Moreover, the bandgap of Ga 2 O 3 restricts the detecting wavelength of PDs to be only about one-third of the solar-blind waveband, failing to achieve full range detection for the solar-blind UV light, which results in limitations in practical applications, such as the inability to accurately match the absorption peak wavelength of the given microorganism or molecule in biochemical sensors. − In addition, controllable bandgap tuning is very beneficial for the construction of heterojunctions . To this end, bandgap tailoring of Ga 2 O 3 is necessary.…”

mentioning

confidence: 99%

Continuous Tunable Energy Band Tailoring Boosts Extending the Sensing of the Waveband Based on (In_xGa_1–x)₂O₃ Solar-Blind Photodetectors

Xi,

Liu,

Yan

et al. 2024

J. Phys. Chem. Lett.

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Rising wide bandgap semiconductor gallium oxide (Ga 2 O 3 ) displays huge potential in performing solar-blind photodetection, with constraint in narrow detection wavebands in nature, whereas bandgap modulation through the introduction of exotic atoms into Ga 2 O 3 has an essential effect on the tunable performance of photodetectors and the detection waveband. Here, a novel method for the preparation of (In x Ga 1−x ) 2 O 3 alloy films is proposed, and the continuous tuning of the bandgap in the range of 3.70−4.99 eV is achieved by varying the In-doping content. Alloy-based metal−semiconductor−metal photodetectors were fabricated, achieving a peak responsivity between 254 and 295 nm, superior performance compared to Ga 2 O 3 photodetectors, with a photo-to-dark current ratio as high as 10 6 , and a better optical image-sensing capability. This study offers new insight for high-performance detection of full solar-blind waveband ultraviolet light.

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Boosting β-Ga₂O₃ Solar-Blind Detector via Highly Photon Absorbance and Carrier Injection by Localized Surface Plasmon Resonance

Cited by 15 publications

References 31 publications

Substrate temperature dependent crystal structure and deep-ultraviolet photodetection of ZnGa₂O₄ thin films^*

Substrate temperature dependent crystal structure and deep-ultraviolet photodetection of ZnGa₂O₄ thin films^*

Tunable Ga₂O₃ solar-blind photosensing performance via thermal reorder engineering and energy-band modulation

Continuous Tunable Energy Band Tailoring Boosts Extending the Sensing of the Waveband Based on (In_xGa_1–x)₂O₃ Solar-Blind Photodetectors

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Boosting β-Ga2O3 Solar-Blind Detector via Highly Photon Absorbance and Carrier Injection by Localized Surface Plasmon Resonance

Cited by 15 publications

References 31 publications

Substrate temperature dependent crystal structure and deep-ultraviolet photodetection of ZnGa2O4 thin films *

Substrate temperature dependent crystal structure and deep-ultraviolet photodetection of ZnGa2O4 thin films *

Tunable Ga2O3 solar-blind photosensing performance via thermal reorder engineering and energy-band modulation

Continuous Tunable Energy Band Tailoring Boosts Extending the Sensing of the Waveband Based on (InxGa1–x)2O3 Solar-Blind Photodetectors

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About

Boosting β-Ga₂O₃ Solar-Blind Detector via Highly Photon Absorbance and Carrier Injection by Localized Surface Plasmon Resonance

Substrate temperature dependent crystal structure and deep-ultraviolet photodetection of ZnGa₂O₄ thin films^*

Substrate temperature dependent crystal structure and deep-ultraviolet photodetection of ZnGa₂O₄ thin films^*

Tunable Ga₂O₃ solar-blind photosensing performance via thermal reorder engineering and energy-band modulation

Continuous Tunable Energy Band Tailoring Boosts Extending the Sensing of the Waveband Based on (In_xGa_1–x)₂O₃ Solar-Blind Photodetectors