2019
DOI: 10.1002/adfm.201901127
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Boosting the Electrical Double‐Layer Capacitance of Graphene by Self‐Doped Defects through Ball‐Milling

Abstract: Improving the capacitance of carbon materials for supercapacitors without sacrificing their rate performance, especially volumetric capacitance at high mass loadings, is a big challenge because of the limited assessable surface area and sluggish electrochemical kinetics of the pseudocapacitive reactions. Here, it is demonstrated that "self-doping" defects in carbon materials can contribute to additional capacitance with an electrical double-layer behavior, thus promoting a significant increase in the specific … Show more

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Cited by 392 publications

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“…In contrast, the feature A at 288.5 eV between 𝜋* and 𝜎* bands corresponds to the structural change resulting from the increase of the sp 3 -like structure and C-H at the edge or defect site. [36,55] With the increase in pyrolysis temperature, the decrease in the intensity of feature A indicates a reduction in the defect content of the carbon component in PySi/C, which is in full accordance with the TEM results. Furthermore, given that the carbon is doped with nitrogen atoms, the impact of high temperature on the oxidation of the carbon component can be assessed by examining alterations in nitrogen bonding.…”
Section: Results
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confidence: 86%