Bolometric effect in the far-infrared response of a conducting layer on a semi-insulating substrate

Sadowski, M. L.; Grynberg, M.; Witowski, A. M.; Huant, S.; Martinez, G.

doi:10.1103/physrevb.60.10908

Cited by 5 publications

(2 citation statements)

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“…Far infrared Fourier spectroscopy experiments on sample D (and other CdTe layers deposited on a GaAs substrate, not investigated in this paper) were described in [26]. It was found that changes of the conductivity of the CdTe layer were related to heating of the CdTe and GaAs layers by means of FIR photon absorption.…”

Section: Discussionmentioning

confidence: 94%

“…The influence of the bolometric effect on photoconductivity spectra was also discussed in [27]. The possibility of observing the bolometric effect in [26] was connected with a small activation energy E of the conductivity in the samples investigated. The magnetoresistance measurements [14] showed that the hopping conductivity at liquid helium temperatures is characterized by E ≈ 1 meV, which means that even a very small increase of the lattice temperature can lead to observable conductivity changes.…”

Section: Discussionmentioning

confidence: 99%

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Potential fluctuations in CdTe epitaxial layers studied by shallow donor spectroscopy in the far infrared

Karpierz

Łusakowski

Kossut

et al. 2008

J. Phys.: Condens. Matter

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Shallow donor far infrared spectroscopy was carried out on n-type CdTe thin layers grown by molecular beam epitaxy on semi-insulating GaAs substrates. Indium doped layers of 0.5 μm thickness were deposited on a nominally undoped CdTe buffer layer with the thickness between 0.5 and 7 μm. We show that (i) the layers investigated are unintentionally doped with a native donor of an unknown origin with the chemical shift different from that of In; (ii) the shape of the spectral lines shows that the CdTe part of a structure is composed of layers characterized by either a small or a large disorder; (iii) the main sources of the disorder are structural defects originating from the CdTe/GaAs interface and propagating into CdTe layers over a distance of about 4 μm.

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Section: Discussionmentioning

confidence: 94%