Blue Emission in Mg Doped GaN Studied by Time Resolved Spectroscopy

Seitz, R.; Gaspar, C.; Monteiro, T.; Pereira, Eduarda; Leroux, M.; Beaumont, B.; Gibart, P.

doi:10.4028/www.scientific.net/msf.258-263.1155

Cited by 10 publications

(13 citation statements)

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“…This agrees with recent intensity-resolved photoluminescence results, 48,49 where up to 4 overlapping emission bands at 2.9, 2.81, 2.7, and 2.56 eV were observed. 48 Eckey et al 27 identified different deep donor levels at 240Ϯ30 and 350 Ϯ30 meV below the conduction band, respectively, while Hacke et al 53 found donor levels at 265Ϯ15 and ϳ400 meV below the conduction band. Based on our CL results, we identified two donor levels at 350Ϯ30 meV and 440 Ϯ40 meV.…”

Section: Discussionsupporting

confidence: 93%

“…The origin of this band is still not completely understood and recent experimental results indicate that it might consist of more than one emission line. 27,48,49 Most researchers agree that the blue band is caused by a transition between a deep localized donor and an acceptor ͑likely the Mg-related acceptor state͒. 1,27,33,50,51 Kaufmann et al 1 explained the doping level dependence of the observation of the blue band by a model involving self-compensation mechanisms.…”

Section: Heavily Mg-doped "Compensated… Ganmentioning

confidence: 99%

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Dissociation of H-related defect complexes in Mg-doped GaN

et al. 2004

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Post-growth annealing and electron beam irradiation during cathodoluminescence were used to determine the chemical origin of the main optical emission lines in moderately and heavily Mg-doped GaN. The 3.27 eV donor-acceptor pair ͑DAP͒ emission line that dominates the emission spectrum in moderately Mg-doped ͑p-type͒ GaN was found to be strongly reduced by electron irradiation and of different chemical origin than the DAP at a similar energetic position in Si-doped ͑n-type͒ GaN. These results suggest that the acceptor responsible for the 3.27 eV DAP emission in Mg-doped GaN is Mg and that the donor ͑20-30 meV͒ is hydrogenrelated, possibly a (V N-H) complex. This complex is dissociated either by electron irradiation or thermal annealing in N 2 or O 2 atmosphere. We found that upon electron irradiation, a deeper emission line ͑centered at 3.14 eV͒ emerged, which was assigned to a DAP consisting of the same Mg acceptor level and a deeper donor ͑100-200 meV͒ with a similar capture cross section as the donor in the 3.27 eV emission. Moreover, two different deep donor levels at 350Ϯ30 and 440Ϯ40 meV were identified as being responsible for the blue band ͑2.8-3.0 eV͒ in heavily Mg-doped GaN. The donor level at 350Ϯ30 meV was strongly affected by electron irradiation and attributed to a H-related defect.

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Section: Discussionsupporting

confidence: 93%

Section: Heavily Mg-doped "Compensated… Ganmentioning

confidence: 99%

Dissociation of H-related defect complexes in Mg-doped GaN

et al. 2004

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“…Indeed, the higher the magnitude of the potential fluctuation, the larger its size 12 , and optical transition between defects separated by about 10−15 Å may be considered as almost vertical in the scale of the long-range fluctuations. The values of radiative lifetime for the 2.8 eV band found in this study (about 10 µsec) and by Seitz et al 11 (about 0.2 msec) are consistent with DAP emission. Similar lifetimes were observed for the deep DAP in ZnSe (about 0.1 msec) 14 .…”

Section: Discussionsupporting

confidence: 92%

“…In heavily Mg doped GaN a broad photoluminescence (PL) band around 2.6-2.95 eV (referred hereafter as the 2.8 eV band) dominates the PL spectrum [1][2][3][4][5][6][7][8][9][10][11] . The nature of the defect responsible for this band and even the type of optical transitions involved remain unclear.…”

Section: Introductionmentioning

confidence: 99%

Defect Luminescence in Heavily Mg Doped GaN

Reshchikov

Wessels

1999

MRS Internet j. nitride semicond. res.

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Behavior of the photoluminescence band at about 2.8 eV in heavily Mg doped GaN has been studied at different temperatures and excitation intensities. The 2.8 eV band is attributed to donor-acceptor transitions involving a Mg acceptor. The large blue shift of the band with increasing excitation intensity is explained by variation in the contribution of close and distant pairs to the luminescence. The red shift of the band with increasing temperature under high excitation intensity conditions results from thermal release of carriers from close pairs. The thermal activation energy of the deep donor, about 0.4 eV, is determined from the quenching of the 2.8 eV luminescence band at high temperatures.

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“…However, they believed that the shift was not a progressive change in the peak position with time, but rather the result of a redistribution in intensity among four overlapping bands, each of which had a different exponential time decay and a peak position which did not shift with time [89]. This results disagreed with another time-dependent study, which found a non-exponential decay of the BL, and concluded that the BL was due to a DAP transition [69].…”

Section: Self-compensationcontrasting

confidence: 56%

Selective excitation of the yellow and blue luminescence in n- and p-doped Gallium Nitride

Colton

2000

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Blue Emission in Mg Doped GaN Studied by Time Resolved Spectroscopy

Cited by 10 publications

References 0 publications

Dissociation of H-related defect complexes in Mg-doped GaN

Dissociation of H-related defect complexes in Mg-doped GaN

Defect Luminescence in Heavily Mg Doped GaN

Selective excitation of the yellow and blue luminescence in n- and p-doped Gallium Nitride

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