Blue emission from Tm-doped GaN electroluminescent devices

Steckl, A. J.; Garter, M.; Lee, D. S.; Heikenfeld, Jason; Birkhahn, R.

doi:10.1063/1.124958

Cited by 163 publications

(82 citation statements)

References 17 publications

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“…15 The PL was excited using the 250 nm ͑ϳ4.96 eV͒ output of an OPO system, which corresponds to above-gap pumping for Al x Ga 1Ϫx N samples with xр0.62. Similar to previous reports, 8,9 the visible PL from GaN:Tm is characterized by a broad band extending from ϳ400 to 600 nm and near-bandedge emission at ϳ367 nm. A weak blue PL line located at ϳ478 nm from the 1 G 4 → 3 H 6 transition of Tm 3ϩ is hardly observable.…”

supporting

confidence: 68%

“…8 One of the main challenges in using RE-doped GaN for full-color display applications is obtaining efficient blue emission. While dominant blue emission has been reported from GaN:Tm EL devices, 8,9 the overall device efficiency was significantly lower than results obtained for GaN:Eu ͑red͒ and GaN:Er ͑green͒. 2 For RE-doped AlN, red emission has also been reported from Eu, and green emission from Erand Tb-doped amorphous and crystalline films.…”

mentioning

confidence: 99%

“…[1][2][3] Visible EL devices based on RE-doped GaN, however, have only been demonstrated from GaN:Eu ͑red͒, 1,5,6 GaN:Er ͑green͒, 7 and GaN:Tm ͑blue͒. 8 One of the main challenges in using RE-doped GaN for full-color display applications is obtaining efficient blue emission. While dominant blue emission has been reported from GaN:Tm EL devices, 8,9 the overall device efficiency was significantly lower than results obtained for GaN:Eu ͑red͒ and GaN:Er ͑green͒.…”

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confidence: 99%

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Photoluminescence properties of in situ Tm-doped AlxGa1−xN

Hömmerich

Nyein

Lee

et al. 2003

Applied Physics Letters

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We report on the photoluminescence ͑PL͒ properties of in situ Tm-doped Al x Ga 1Ϫx N films (0рx р1) grown by solid-source molecular-beam epitaxy. It was found that the blue PL properties of Al x Ga 1Ϫx N:Tm greatly change as a function of Al content. Under above-gap pumping, GaN:Tm exhibited a weak blue emission at ϳ478 nm from the 1 G 4 → 3 H 6 transition of Tm 3ϩ . Upon increasing Al content, an enhancement of the blue PL at 478 nm was observed. In addition, an intense blue PL line appeared at ϳ465 nm, which is assigned to the 1 D 2 → 3 F 4 transition of Tm 3ϩ . The overall blue PL intensity reached a maximum for xϭ0.62, with the 465 nm line dominating the visible PL spectrum. Under below-gap pumping, AlN:Tm also exhibited intense blue PL at 465 and 478 nm, as well as several other PL lines ranging from the ultraviolet to near-infrared. The Tm 3ϩ PL from AlN:Tm was most likely excited through defect-related complexes in the AlN host.

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supporting

confidence: 68%

mentioning

confidence: 99%

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confidence: 99%

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Photoluminescence properties of in situ Tm-doped AlxGa1−xN

Hömmerich

Nyein

Lee

et al. 2003

Applied Physics Letters

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“…This value compares favorably with that found in other rare-earth-semiconductor material systems such as GaN:Eu. 25 Although the PL intensity is quenched at higher temperatures, the transition linewidth does not change with increasing temperature from 10 to 600 K, as seen in Fig. 3 ͑top͒.…”

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confidence: 58%

Ultraviolet photoluminescence from Gd-implanted AlN epilayers

Zavada

Nepal

Lin

et al. 2006

Applied Physics Letters

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Deep ultraviolet emission from gadolinium ͑Gd͒-implanted AlN thin films has been observed using photoluminescence ͑PL͒ spectroscopy. The AlN epilayers were ion implanted with Gd to a total dose of ϳ6 ϫ 10 14 cm −2 . Using the output at 197 nm from a quadrupled Ti:sapphire laser, narrow PL emission was observed at 318 nm, characteristic of the trivalent Gd ion. A broader emission band, also centered at 318 nm, was measured with excitation at 263 nm. The PL emission intensity decreased by less than a factor of 3 over the sample temperature range of 10-300 K and decay transients were of the order of nanoseconds.

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“…Such is the case of the semiconductor materials doped with rare earth (RE) ions, which have been widely studied due to the narrow and intense luminescence they yield, aiming at a wealth of applications. [5][6][7][8] Recently, excellent electro-optical properties have been reported on III-V semiconductors as host matrix for different RE ions, allowing for a suitable performance as light-emitting devices. 5,9 In addition, REs have been employed to develop light-emitting silicon-based materials for optoelectronic applications.…”

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confidence: 99%

Structural and optical properties of Al-Tb/SiO2 multilayers fabricated by electron beam evaporation

Blázquez

López-Vidrier

López‐Conesa

et al. 2016

Journal of Applied Physics

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Articles you may be interested inLight emitting Al-Tb/SiO 2 nanomultilayers (NMLs) for optoelectronic applications have been produced and characterized. The active layers were deposited by electron beam evaporation onto crystalline silicon substrates, by alternatively evaporating nanometric layers of Al, Tb, and SiO 2 . After deposition, all samples were submitted to an annealing treatment for 1 h in N 2 atmosphere at different temperatures, ranging from 700 to 1100 C. Transmission electron microscopy confirmed the NML structure quality, and by complementing the measurements with electron energy-loss spectroscopy, the chemical composition of the multilayers was determined at the nanoscopic level. The average composition was also measured by X-ray photoelectron spectroscopy (XPS), revealing that samples containing Al are highly oxidized. Photoluminescence experiments exhibit narrow emission lines ascribed to Tb 3þ ions in all samples (both as-deposited and annealed ones), together with a broadband related to SiO 2 defects. The Tb-related emission intensity in the sample annealed at 1100 C is more than one order of magnitude higher than identical samples without Al. These effects have been ascribed to the higher matrix quality, less SiO 2 defects emitting, and a better Tb 3þ configuration in the SiO 2 matrix thanks to the higher oxygen content favored by the incorporation of Al atoms, as revealed by XPS experiments. Published by AIP Publishing.

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Blue emission from Tm-doped GaN electroluminescent devices

Cited by 163 publications

References 17 publications

Photoluminescence properties of in situ Tm-doped AlxGa1−xN

Photoluminescence properties of in situ Tm-doped AlxGa1−xN

Ultraviolet photoluminescence from Gd-implanted AlN epilayers

Structural and optical properties of Al-Tb/SiO2 multilayers fabricated by electron beam evaporation

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