Bitline/plateline reference-level-precharge scheme for high-density chainFeRAM

Oikawa, Keiko; Takashima, D.; Shiratake, S.; Hoya, K.; Joachim, H.-O.

doi:10.1109/vlsic.2003.1221191

Cited by 4 publications

(8 citation statements)

References 2 publications

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“…In the first half, Pb(DPM) 2 , Ti(OiPr) 2 (DPM) 2 and Zr(DIBM) 4 were used as liquid sources. The deposition rate of 12.3 nm/min was attained on 6-inch Pt/Ti/SiO 2 /Si wafers at 550 • C at a total source supplying rate of 114 µmol/min.…”

Section: Discussionmentioning

confidence: 99%

“…Therefore, we also examined a cocktail source prepared from methoxyethoxytetramethylheptanedionato (METHD)-based precursors. The cocktail source was prepared by mixing Pb(METHD) 2 , Ti(MPD = methylpentanedioxide)(METHD) 2 and Zr(METHD) 4 dissolved in ethylcyclohexane (ECH). Precursors used in this study are summarized in Table 1.…”

Section: Precursorsmentioning

confidence: 99%

“…PZT thin films were deposited on 6-inch Pt/Ti/SiO 2 /Si wafers at 550 • C for 30 minutes by liquid delivery MOCVD using Pb(DPM) 2 , Ti(OiPr) 2 (DPM) 2 and Zr(DIBM) 4 . The average thickness of the film was 370 nm; the deposition rate of 12.3 nm/min was attained at a total supplying rate of 114 µmol/min.…”

Section: Deposition On 6-inch Wafersmentioning

confidence: 99%

“…A cocktail solution was prepared by mixing Pb(METHD) 2 , Zr(METHD) 4 and Ti(MPD) (METHD) 2 at a Pb:Zr:Ti molar ratio of 1.65:2.00:1.00. PZT thin films were deposited on Pt/Ti/SiO 2 /Si substrates at 500 • C for 30 minutes using the cocktail solution.…”

Section: Deposition Using a Cocktail Solutionmentioning

confidence: 99%

“…Recently, many manufacturers have announced the development of high-density FeRAMs with capacities of 8-64 Mbits [2][3][4][5][6]. Metalorganic chemical vapor deposition (MOCVD) has attracted much attention as a key technology for mass production of such high-density FeRAMs.…”

Section: Introductionmentioning

confidence: 99%

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Recent Developments on MOCVD of Ferroelectric Thin Films

2004

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Ferroelectric Pb(Zr,Ti)O 3 thin films were fabricated by liquid delivery MOCVD using Pb(DPM) 2 , Ti(OiPr) 2 (DPM) 2 and Zr(DIBM) 4 . The deposition rate of 12.3 nm/min was attained on 6-inch Pt/Ti/SiO 2 /Si wafers at 550 • C. The average and the deviation of twofold remanent polarization were 45.5 µC/cm 2 and ±6.4%, respectively, over the 6-inch wafer.Step coverage was improved from 44% to 90% by decreasing deposition temperature from 550 to 400 • C although the deposition rate decreased by 60%. TiO 2 nanoparticles diffused to the surface of platinum bottom electrodes were effective as a seed to obtain 111 preferential oriented PZT thin films at the deposition temperature of 550 • C. Iridium oxide bottom electrodes were reduced to metal ones by CO and/or H 2 gases generated by decomposition of precursors. Oxide materials seem to be not the best as bottom electrodes in liquid delivery MOCVD. A cocktail source consisted of Pb(METHD) 2 , Ti(MPD)(METHD) 2 and Zr(METHD) 4 was also examined. PbPt x alloy phase existed in PZT films deposited at 500 • C was disappeared by post-annealing at 600 • C and the annealed film showed hysteresis properties with the 2P r of 56 µC/cm 2 and the 2E c of 181 kV/cm.

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Section: Discussionmentioning

confidence: 99%

Section: Precursorsmentioning

confidence: 99%

Section: Deposition On 6-inch Wafersmentioning

confidence: 99%

Section: Deposition Using a Cocktail Solutionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Recent Developments on MOCVD of Ferroelectric Thin Films

2004

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Comparison of PbZr1−xTixO3 thin films deposited on different substrates by liquid delivery metal organic chemical vapor deposition

Xie

Ruan

et al. 2009

Journal of Applied Physics

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Fabrication and Properties of Metal-PZT-Metal Capacitors by Liquid Delivery Mocvd

Xie

Han

et al. 2008

Integrated Ferroelectrics

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Pb(Zr 1−x ,Ti x )O 3 (PZT) thin films were prepared on 8-inch and 4-inch Pt or Ir-electroded Si wafers by liquid delivery metal-organic chemical vapor deposition (LD-MOCVD) using cocktail sources of Pb, Zr and Ti. The processing conditions were optimized in order to obtain high-performance PZT films. The thickness uniformity of PZT films on 8-inch substrate was about ±3.24%. The deposition rate of Pb (15.8 nm/min) and Ti (17.9 nm/min) deposited on Si substrate were faster than that of Zr (2.5 nm/min). The growth temperature of PZT film was adjusted to 570-630 • C depending on the substrates used. The properties of metal/PZT/metal capacitors were also studied. The PZT films based on Pt substrate showed no good ferroelectric properties. By contrast, the ferroelectric properties of Ir/IrO 2 /PZT/IrO 2 /Ir capacitors were excellent. At an applied voltage of 5 V, the remanent polarization (P r ) and coercive field (E c ) values were about 36 µC/cm 2 and 50 kV/cm, respectively.

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Bitline/plateline reference-level-precharge scheme for high-density chainFeRAM

Cited by 4 publications

References 2 publications

Recent Developments on MOCVD of Ferroelectric Thin Films

Recent Developments on MOCVD of Ferroelectric Thin Films

Comparison of PbZr1−xTixO3 thin films deposited on different substrates by liquid delivery metal organic chemical vapor deposition

Fabrication and Properties of Metal-PZT-Metal Capacitors by Liquid Delivery Mocvd

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