Bistability of the Electron‐Hole Plasma Density in a Strong Electromagnetic Field

Abstract

Differing from the usual treatment of an electron-hole plasma in quasi-thermal equilibrium, where the particle density is kept constant, a plasma is considered with a fixed chemical potential. Such a situation is expected to be realistic for semiconductors with a direct gap in the presence of a strong monochromatic electromagnetic field. The appearance of a bistability in the plasma density is predicted for photon energies in the vicinity of the gap.I m Unterschied ziir ublichen Behandlung von Elektron-Loch-Plasmen im quasi-thermischen Gleichgewicht, bei der die Teilchendichte konstant gehalten wird, wird ein Plasma mit festem chemischen Potential betrachtet. Es wird angenommen, dab eine derartige Situation realistisch ist fur einen Halbleiter mit direkter Bandliicke in Anwesenheit eines starken elektromsgnetischen Feldes. Das Auftreten einer Plasmadichte-Bistabilitat fur Photonenenergien in der Nahe der Bandlucke wird vorausgesagt.

Condensation of electron-hole pairs in a degenerate semiconductor at room temperature

“…Superradiant emission in large-density nonequilibrium e-h systems in GaAs/AlGaAs p-i-n heterostructures was experimentally studied at room temperature [24][25][26][27][28] . The carrier density exceeded (2)(3)(4)(5)(6) . 10 18 cm -3 in the experiments.…”

“…the description of the condensate we use a standard approach based on the Bogolubov transformation, which has been previously developed by different authors[2][3][4][5][6][7][8][9][10][11][12][13][14] .However, it is necessary to point out a substantial difference between the physical situation described in those papers and conditions of the experiments in Ref.24-28. It was supposed in the theoretical papers that electron-hole pairs were created by an external optical field with the photon energyg L E > ω h. This fixes the chemical potential of the electronone has a) the resonant interaction of the electromagnetic field occurs with e-h…”