Bistability of self-modulation of the GaAs intrinsic stimulated picosecond radiation spectrum

Oscillations of absorption of a probe picosecond light pulse caused by its interaction with stimulated picosecond emission of GaAs

“…Note that the samples and pumping in [3] and this paper were similar. The restriction on the parameter values at which measure…”

“…Taking the aforesaid into account, we performed studies for two probe pulse energies បω p = បω s-i + Δ = 1.435 eV and បω p = បω s-h + Δ = 1.440 eV, where បω s⎯i = 1.395 eV and បω s-h = 1.400 eV are the energies of the i and h modes [3]. Note that the samples and pumping in [3] and this paper were similar.…”

“…Bleaching was measured by the results of about a hundred mea surements, where E p is the average probe pulse energy and E r is the average reference pulse energy in the probe channel. The absorption coefficient α of a pho toexcited GaAs layer was determined from the expres sion We found in [3] the two sets (i and h) of equidistant emission modes in the emission spectrum. At the beginning of pumping, the i modes dominated in the spectrum and after the pump maximum, the h modes became dominant.…”

“…The pumping of GaAs resulted in the ultrafast appearance of stimulated picosecond edge emission (below simply called emission) [2] having (even before it reached the ends of a sample) bistable self modulation of the spec trum [3]. The latter was produced by the eigenmodes of an active cavity formed by the longitudinal planar boundaries of the GaAs layer.…”

“…This interaction can be a variant of stim ulated Raman scattering, as assumed in [3]. Second, similarity means that the physical mechanism of non linear interaction of spectral modes in the active medium of semiconductor lasers can be studied using interaction of emission with a probe pulse with con trollable and measurable parameters incident on the active medium.…”