The energy level alignment of ␣ , -dihexylsexithienyl ͑DH6T͒ mono-and multilayers on tetrafluorotetracyanoquinodimethane ͑F4-TCNQ͒ precovered Ag͑111͒ and polycrystalline Au substrates was investigated with ultraviolet photoelectron spectroscopy. For certain F4-TCNQ precoverages molecular level pinning at DH6T monolayer-multilayer homointerfaces was observed. The pinning behavior shows that thermodynamic equilibrium can be established across hexyl chains via charge transfer, indicating the limited use of these short alkyl chains for insulation in the field of molecular electronics. © 2007 American Institute of Physics. ͓DOI: 10.1063/1.2715042͔The charge carrier injection barrier height across organic/metal interfaces plays a crucial role in virtually all devices in the field of "organic electronics." [1][2][3] Energy levels at organic/metal interfaces can be tuned by precovering the metal substrate with strong electron accepting molecules such as tetrafluorotetracyanoquinodimethane ͑F4-TCNQ͒ ͓chemical structure shown in Fig. 1͑a͔͒. Such molecules can undergo a charge-transfer-like interaction on the metal substrate, 4,5 which increases the substrate work function. Energy levels of subsequently deposited molecules are aligned to this new effective work function. ␣ , -dihexylsexithienyl ͑DH6T͒ ͓Fig. 1͑a͔͒ on Ag͑111͒ and polycrystalline Au undergoes a structural transition from a flat lying monolayer ͑L1͒ to inclined multilayers ͑L2͒. 6 Most likely changes in the polarization energy, as suggested to explain similar changes in orientation for pentacene, 7,8 lead to a decrease of the ionization energy of the molecules and consequently to a rigid shift of molecular levels towards the Fermi level ͑E F ͒ ͓i.e., lowering of the hole injection barrier ͑HIB͔͒. In our work we investigated the energy level alignment of DH6T deposited on F4-TCNQ precovered Ag͑111͒ and polycrystalline Au with ultraviolet photoelectron spectroscopy ͑UPS͒. A transition from vacuum level alignment to molecular level pinning-reminiscent of Fermi-level pinning 9 -at the homointerface between DH6T monolayer and multilayers was observed, which depended on the amount of predeposited F4-TCNQ.UPS experiments were carried out at the FLIPPER II end station at HASYLAB ͑Hamburg, Germany͒. 10 The interconnected sample preparation chambers ͑base pressure of 2 ϫ 10 −9 mbar͒ and analysis chamber ͑base pressure of 2 ϫ 10 −10 mbar͒ allowed sample transfer without breaking ultrahigh vacuum conditions. The Ag͑111͒ single crystal was cleaned by repeated Ar-ion sputtering and annealing cycles ͑up to 550°C͒ until a clear low energy electron diffraction pattern was observed. The polycrystalline Au substrates were at least 400 Å thick Au films on a Cu foil, evaporated in situ and Ar-ion sputtered before use. DH6T ͑H. C. Starck GmbH͒ and F4-TCNQ ͑Fluka͒ were evaporated using resistively heated pinhole sources at evaporation rates of about 1 Å / min. The film mass thickness was monitored with a quartz crystal microbalance. Spectra were recorded with a double-pass cylindric...