Biocompatible and Flexible Chitosan‐Based Resistive Switching Memory with Magnesium Electrodes

Abstract

A flexible and transparent resistive switching memory based on a natural organic polymer for future flexible electronics is reported. The device has a coplanar structure of Mg/Ag‐doped chitosan/Mg on plastic substrate, which shows promising nonvolatile memory characteristics for flexible memory applications. It can be easily fabricated using solution processes on flexible substrates at room temperature and indicates reliable memory operations. The elucidated origin of the bipolar resistive switching behavior is attributed to trap‐related space‐charge‐limited conduction in high resistance state and filamentary conduction in low resistance state. The fabricated devices exhibit memory characteristics such as low power operation and long data retention. The proposed biocompatible memory device with transient electrodes is based on naturally abundant materials and is a promising candidate for low‐cost memory applications. Devices with natural substrates such as chitosan and rice paper are also fabricated for fully biodegradable resistive switching memory. This work provides an important step toward developing a flexible resistive switching memory with natural polymer films for application in flexible and biodegradable nanoelectronic devices.

The effect of content and thickness of chitosan thin films on resistive switching characteristics

“…The resistive switching characteristics of the Ag/chitosan/FTO device in this study show the non-volatile random access memory with bipolar behavior ( Figure 5), which is consistent with the previous reports based on chitosan material 8,27 . The operating voltages of our device are similar to their devices with under 3 V. It exhibits the advantages of low power consumption in electronic devices.…”

“…The operating voltages of our device are similar to their devices with under 3 V. It exhibits the advantages of low power consumption in electronic devices. The ON/OFF resistance ratio is the same as the group [8] with several tens but lower to the other one 27 . In our device, we use undoped chitosan as an insulator layer in the capacitor structure, while Ag-doped-chitosan, Mg-doped-chitosan layer are used in other studies.…”

High On/Off Ratio Carbon Quantum Dot–Chitosan Biomemristors with Coplanar Nanogap Electrodes

“…The traps and the ratio of the unoccupied charge carriers to the trapped ones control the SCLC mechanism. 28,66 By sweeping the voltage from 1.6 → 0 V, the I−V measurement showed a linear behavior of I ∝ V, which is consistent with the filamentary conduction path (Figure 3a,b). Ohm's law is the prevalent process in this LRS region (eq 2)…”

A Flexible Transient Biomemristor Based on Hybrid Structure HfO2/BSA:Au Double Layers

“…Also, the conductance of the flexible biomemristor is effectively regulated by the amplitude, interval, and width of the pulse, whether in a curved or noncurved state, which will be more conducive to realizing the effective response of simulated biological protrusion under the influence of various external stimuli. [ 33–35 ] The test results of the flexible biomemristor are surprisingly similar to the test results of the Pt substrate under the same structure and condition, whether it is bent or not, as shown in Figure S1 in the Supporting Information; this is an important breakthrough in flexible devices. This will be more conducive to the realization of the wearable function of flexible devices.…”