2005
DOI: 10.1116/1.2011404
|View full text |Cite
|
Sign up to set email alerts
|

Binary and ternary NiTi-based shape memory films deposited by simultaneous sputter deposition from elemental targets

Abstract: Articles you may be interested inStructural and magnetic properties of magnetron sputtered Ni-Mn-Sn ferromagnetic shape memory alloy thin films

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
2

Citation Types

1
17
0

Year Published

2008
2008
2015
2015

Publication Types

Select...
4
2
1

Relationship

1
6

Authors

Journals

citations
Cited by 30 publications
(18 citation statements)
references
References 23 publications
1
17
0
Order By: Relevance
“…8 However, it has been well established that sputter deposition is the most practical technique for depositing NiTi with sufficient shape memory effect. 6,[9][10][11][12][13][14][15] Sputtering is the best option for depositing NiTi thin films because the conventional vacuum evaporation of NiTi leads to the potential problem of difference in evaporation rate due to difference in vapor pressure, thus making composition control more difficult. 1 One of the techniques used for sputtering NiTi onto silicon (Si) wafers is simultaneous cosputtering from a Ni50Ti50 alloy and pure Ti targets.…”
Section: Figmentioning
confidence: 99%
See 3 more Smart Citations
“…8 However, it has been well established that sputter deposition is the most practical technique for depositing NiTi with sufficient shape memory effect. 6,[9][10][11][12][13][14][15] Sputtering is the best option for depositing NiTi thin films because the conventional vacuum evaporation of NiTi leads to the potential problem of difference in evaporation rate due to difference in vapor pressure, thus making composition control more difficult. 1 One of the techniques used for sputtering NiTi onto silicon (Si) wafers is simultaneous cosputtering from a Ni50Ti50 alloy and pure Ti targets.…”
Section: Figmentioning
confidence: 99%
“…%) near the equiatomic composition can shift the phase change by as much as 100 °C. 6 Therefore, the NiTi composition is generally targeted at Ni50Ti50.…”
Section: Figmentioning
confidence: 99%
See 2 more Smart Citations
“…In order to use shape memory-based micro-actuators at elevated temperatures, thin films with higher transformation temperatures need to be developed. Ti-Ni-Hf and Ti-Ni-Zr alloys are promising candidates for this purpose, as they demonstrate both high transformation temperatures (>100°C) and low cost compared to the Ti-Ni-Pd and Ti-Ni-Pt systems [8][9][10][11].…”
Section: Introductionmentioning
confidence: 99%