Biaxial alignment in sputter deposited thin films

Mahieu, Stijn; Ghekiere, Pieter; Depla, Diederik; Gryse, Roger De

doi:10.1016/j.tsf.2006.06.027

Cited by 389 publications

(325 citation statements)

References 90 publications

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“…This historically important model forms the basis of several studies, see for example [62]. Recently, Mahieu et al [63] published an extended SZM (ESZM) which has the advantage that it not only summarizes the influence of deposition parameters on film microstructure, but also provides insight into sputter deposited thin film growth. Hence, film structure (microstructure, and crystallographic orientation) is plotted as a function of adatom mobility which depends on the energy flux per sputtered particle (see previous section); which in turn depends on the deposition parameters.…”

Section: Sputter Deposited Thin Films: Morphology and Microstructurementioning

confidence: 99%

Sputter Deposition Processes

Depla

Mahieu

Greene

2010

Handbook of Deposition Technologies for Films and Coatings

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123

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Sputter deposition is a widely used technique to deposit thin films on substrates. The technique is based upon ion bombardment of a source material, the target. Ion bombardment results in a vapor due to a purely physical process, i.e. the sputtering of the target material. Hence, this technique is part of the class of physical vapor deposition techniques, which includes, for example, thermal evaporation and pulsed laser deposition. The most common approach for growing thin films by sputter deposition is the use of a magnetron source in which positive ions present in the plasma of a magnetically enhanced glow discharge bombard the target. This popular technique forms the focus of this chapter. The target can be powered in different ways, ranging from dc for conductive targets, to rf for nonconductive targets, to a variety of different ways of applying current and/or voltage pulses to the target. Since sputtering is a purely physical process, adding chemistry to, for example, deposit a compound layer must be done ad hoc through the addition of a reactive gas to the plasma, i.e. reactive sputtering. The undesirable reaction of the reactive gas with the target material results in a non-linear behavior of the deposition parameters as a function of the reactive gas flow. To model this behavior, the fluxes of the various species towards the target must be determined. However, equally important are the fluxes of species incident at the substrate because they not only influence the reactive sputter deposition process, but also control the growth of the desired film. Indeed, the microstructure of magnetron sputter deposited films is defined by the identity of the particles arriving at the substrate, their fluxes and the energy per particle.

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Section: Sputter Deposited Thin Films: Morphology and Microstructurementioning

confidence: 99%

Sputter Deposition Processes

Depla

Mahieu

Greene

2010

Handbook of Deposition Technologies for Films and Coatings

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123

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“…3), resulting in a pure [200] out-ofplane oriented thin film. Also, the low EPA gives evidence for zone T conditions [18,19]. Indeed, grains with different orientations initially coalesce in this zone but as the film becomes thicker, they are overgrown by geometrically faster growing grains.…”

Section: Discussionmentioning

confidence: 95%

“…The extended structure zone model (ESZM) describes the evolution of the microstructure of a growing film as a function of the adatom mobility [18,19]. The adatom mobility is primarily influenced by the available energy per adatom arriving on the growing film or surface (= EPA) [20,21].…”

Section: Energy Flux Measurementsmentioning

confidence: 99%

Influence of oxygen flow and film thickness on the texture and microstructure of sputtered ceria thin films

Steenberge¹,

Leroy²,

Depla³

2014

Thin Solid Films

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“…This loss can be related to the mobility of the adparticles and also to the angular spread of the incoming material [18]. At higher pressure the arrival angle of the adparticles is strongly influenced by the collisions with the gas atoms, changing their direction towards the film surface, resulting in a less defined directed flux of the arriving atoms.…”

Section: Methodsmentioning

confidence: 99%