Bias temperature instability (BTI) characteristics of graphene Field-Effect Transistors

Liu, Bin; Yang, Mingjie; Zhan, Chunlei; Yang, Yue; Yeo, Yee-Chia

doi:10.1109/vtsa.2011.5872215

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Cited by 7 publications

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“…Nevertheless, only a few attempts to study the reliability of GFETs with respect to bias-temperature instabilities (BTI) have been undertaken by other groups. [13][14][15][16] At the same time, we have reported several studies for both BTI and hot-carrier degradation (HCD) in single-layer double-gated GFETs. [17][18][19][20] However, only the reliability of high-k top gate oxide has been examined in our previous works.…”

Section: Introductionmentioning

confidence: 99%

Bias-temperature instability on the back gate of single-layer double-gated graphene field-effect transistors

Illarionov

Waltl

Smith

et al. 2016

Jpn. J. Appl. Phys.

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We study the positive and negative bias-temperature instabilities (PBTI and NBTI) on the back gate of single-layer double-gated graphene fieldeffect transistors (GFETs). By analyzing the resulting degradation at different stress times and oxide fields we show that there is a significant asymmetry between PBTI and NBTI with respect to their dependences on these parameters. Finally, we compare the results obtained on the high-k top gate and SiO 2 back gate of the same device and show that SiO 2 gate is more stable with respect to BTI.

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