Beyond TED: understanding boron shallow junction formation

Dunham, Scott T.; Chakravarthi, S.; Gencer, Alp H.

doi:10.1109/iedm.1998.746407

Cited by 9 publications

(12 citation statements)

References 12 publications

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“…20 The flux of boron-interstititial pairs into the bulk will create an excess interstitial concentration while concentration of interstitial at the surface remains at an equilibrium value. One for example, the coupling diffusion of the boron-interstitial pair can result in redistribution of boron during subsequent furnace annealing.…”

Section: Discussionmentioning

confidence: 99%

Stability studies of ultrashallow junction formed by low energy boron implant and spike annealing

Shao

Wang

Rusakova

et al. 2002

Journal of Applied Physics

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Impact of the end of range damage from low energy Ge preamorphizing implants on the thermal stability of shallow boron profilesThe stability of junctions formed by spike anneal remains a crucial issue for the device performance. In this study, 0.2 keV B implanted silicon was thermally spike annealed at 1100°C. Samples were then furnace annealed under temperatures between 550 and 750°C to study their stabilities. We have observed the anomalous diffusion of boron during the post-spike furnace annealing in nitrogen ambient. The anomalous behavior shows two features in the near-surface region and in the tail region. B diffusion in the tail region was transient, e.g., with an enhancement of 10 3 ϫequilibrium at 700°C for the first 60 s. In the near-surface region, a large number of B atoms move toward the native oxide/Si interface with a diffusion rate also transient and similar to that observed in the tail region. It is indicated that interstitials are generated due to spike annealing and will cause instability of the junction during the following thermal processes.

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Section: Discussionmentioning

confidence: 99%

Stability studies of ultrashallow junction formed by low energy boron implant and spike annealing

Shao

Wang

Rusakova

et al. 2002

Journal of Applied Physics

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“…Using a cap to avoid surface complexity, such as coupled diffusion of boron, 8 was done before. Most recently, we have studied the kinetics of self-interstitial release in a BED reaction, intending to gain some insight into the mechanism of this peculiar phenomenon.…”

Section: A Kinetics Of Interstitials Released From Boride and Boridementioning

confidence: 99%

“…[1][2][3][4] Although transient enhanced diffusion decreases with implantation energy and is virtually eliminated in the sub-keV implantation regime, the diffusion behavior of boron implanted into Si with ultralow energy has yet another type of anomalous diffusion phenomenon now known as the boride-enhanced diffusion ͑BED͒. 8 The implantation dose of 10 15 /cm 2 necessary for shallow junction formation using 0.5 keV B implant is already above the threshold for BED to occur. BED is attributed to a silicon boride phase that injects Si interstitials during annealing.…”

Section: Introductionmentioning

confidence: 99%

Ultrashallow junction formation by point defect engineering

Shao

Thompson

Heide

et al. 2004

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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We demonstrated that formation of sub-10 nm junctions can be realized by the technique of point defect engineering ͑PDE͒. The approach was based on the fact that high-energy ion bombardment with silicon can spatially separate the distribution of interstitials and vacancies, with a vacancy-rich region formed near the surface region. Effects of PDE on the boride-enhanced diffusion ͑BED͒ were systematically investigated by using boron superlattices grown by molecular-beam epitaxy. We observed that a high-energy implant provides an effective method to suppress BED. Furthermore, PDE can also ͑1͒ increase the stability of highly doped junction, ͑2͒ retard boron diffusion to a rate much less than normal diffusion, ͑3͒ sharpen the dopant profile, and ͑4͒ enhance boron activation.

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“…However, extrinsic boron TED can be induced by heavy ion pocket implant, which is required for short channel effect (SCE) control. High concentration [2] or boron-enhanced diffusion (BED) [3] effects are reported to be deleterious for USJs. For ULE implants, high concentration and BED effects are more pronounced because of steep gradient and high concentration of boron.…”

Section: Introductionmentioning

confidence: 99%

Interface induced uphill diffusion of boron: an effective approach for ultrashallow junction

Wang

Chang

et al. 2001

IEEE Electron Device Lett.

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This paper investigates anomalous diffusion behavior for ultra low energy implants in the extension or tip of PMOS devices. Transient enhanced diffusion (TED) is minimal at these low energies, since excess interstitials are very close to the surface. Instead, interface induced uphill diffusion is found, for the first time, to dominate during low temperature thermal cycles. The interface pile-up dynamics can be taken advantage of to produce shallower junctions and improve short channel effect control in PMOS devices. Attempts to minimize TED before spacer deposition by inclusion of extra RTA anneals are shown to be detrimental to forming boron ultra shallow junctions.Index Terms-MOS devices, transient enhanced diffusion, ultrashallow junction, up-hill diffusion.

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Beyond TED: understanding boron shallow junction formation

Cited by 9 publications

References 12 publications

Stability studies of ultrashallow junction formed by low energy boron implant and spike annealing

Stability studies of ultrashallow junction formed by low energy boron implant and spike annealing

Ultrashallow junction formation by point defect engineering

Interface induced uphill diffusion of boron: an effective approach for ultrashallow junction

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