Beryllium diffusion in short-period AlxGa1 − xAs/AlAs-superlattices and vertically compact laser structures grown by molecular beam epitaxy

Gaymann, A.; Maier, M.; Bronner, W.; Grün, N.; Köhler, K.

doi:10.1016/s0921-5107(96)01755-2

Cited by 3 publications

(3 citation statements)

References 3 publications

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“…At a doping concentration of 2xlOI9 cm-3 a strong increase in diffusion occurs for all growth temperatures. The depth profiles show solubility limits for Be in AlXGa,.,As layers of approximately cm-' and 2~1 0 '~ cm" at x = 0.6 and x = 0.8, respectively [2], in agreement with similar findings in AlAs [3]. Based on the results above, various laser structures were grown using our optimized growth parameters.…”

Section: Resultssupporting

confidence: 82%

“…Laser structures with equal layer thicknesses but higher Be doping concentrations showed threshold currents densities exceeding 1000 A/cmZ. This value was due to a high Be diffusion into the quantum wells as substantiated by SIMS measurements [2].…”

Section: Resultsmentioning

confidence: 55%

“…At a Be concentration of 2~1 0 '~ cm-3 we observe Be outdiffusion into the undoped GaAs layers at a growth temperature of 660°C [2]. At a doping concentration of 2xlOI9 cm-3 a strong increase in diffusion occurs for all growth temperatures.…”

Section: Resultsmentioning

confidence: 77%

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Suppression of dopant redistribution in AlGaAs/GaAs laser-HEMT structures for optoelectronic transmitters grown by molecular beam epitaxy

Gaymann

Maier²,

Köhler³

et al. 1997

Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors

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Detailed studies of segregation and diffusion of the dopants Si and Be in MBE grown AlGaAs/GaAs heterostructures for optoelectronic devices are presented. Segregation of Si could be suppressed by lowering the substrate temperature during the growth of a few monolayers after the deposition of the doped layers. Solubility limits of Be were observed to depend on the Al mole fraction. Be diffusion in the laser structures was negligible at doping concentrations below these solubility limits As an application, transmitter OEICs were fabricated using laser-HEMT structures grown with optimized growth conditions. The devices operated successfully at 15 GBit/s

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Section: Resultssupporting

confidence: 82%

Section: Resultsmentioning

confidence: 55%

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Suppression of dopant redistribution in AlGaAs/GaAs laser-HEMT structures for optoelectronic transmitters grown by molecular beam epitaxy

Gaymann

Maier²,

Köhler³

et al. 1997

Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors

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Characterization of beryllium doped Al0.33Ga0.67As layers grown by molecular beam epitaxy

Zheng

Radhakrishnan

Wang

et al. 1999

Journal of Crystal Growth

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Solid-solubility limits of Be in molecular beam epitaxy grown AlxGa1−xAs layers and short-period superlattices

Gaymann

Maier

Köhler

1999

Journal of Applied Physics

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The redistribution of Be in highly doped AlxGa1−xAs layers and AlxGa1−xAs/AlAs(GaAs) short period superlattices (SPSL) during molecular beam epitaxy was investigated by secondary ion mass spectrometry (SIMS) depth profiling. Be outdiffuses significantly from these layers and, additionally, segregates in growth direction. Conversely, Be is depleted and incorporated only up to a solid-solubility limit depending on the Al content. SPSLs with shorter period are disordered and show the solid-solubility limits of homogeneous AlxGa1−xAs layers with the same average composition. Be solid-solubility limits in AlxGa1−xAs layers covering the whole range from GaAs to AlAs are derived from the SIMS depth profiles.

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Beryllium diffusion in short-period AlxGa1 − xAs/AlAs-superlattices and vertically compact laser structures grown by molecular beam epitaxy

Cited by 3 publications

References 3 publications

Suppression of dopant redistribution in AlGaAs/GaAs laser-HEMT structures for optoelectronic transmitters grown by molecular beam epitaxy

Suppression of dopant redistribution in AlGaAs/GaAs laser-HEMT structures for optoelectronic transmitters grown by molecular beam epitaxy

Characterization of beryllium doped Al0.33Ga0.67As layers grown by molecular beam epitaxy

Solid-solubility limits of Be in molecular beam epitaxy grown AlxGa1−xAs layers and short-period superlattices

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