Achieving efficient
devices while maintaining a high fabrication yield is a key challenge
in the fabrication of solution-processed, perovskite-based light-emitting
diodes (PeLEDs). In this respect, pinholes in the solution-processed
perovskite layers are a major obstacle. These are usually mitigated
using organic electron-conducting planarization layers. However, these
organic interlayers are unstable under applied bias in air and suffer
from limited charge carrier mobility. In this work, we present a high
brightness p–i–n PeLED based on a novel blade-coated
silver microflake (SMF) rear electrode, which allows for a low-cost
nanocrystalline ZnO inorganic electron-transporting layer to be used.
This novel SMF contact is crucial for achieving high performance as
it prevents the electrical shorting suffered when standard thermally
evaporated silver rear contacts are used. The fabricated PeLEDs exhibit
an excellent maximum luminance of 98,000 cd/m2, a maximum
current efficiency of 22.3 cd/A, and a high external quantum efficiency
of 4.6% under 5.9 V forward bias. The SMF rear contact can be printed
and scaled at low cost to large areas and applied to flexible devices.