Behavior of the ε-Ga<sub>2</sub>O<sub>3</sub>:Sn Evaporation During Laser-Assisted Atom Probe Tomography

Chabanais, Florian; Russo, Enrico Di; Karg, Alexander; Eickhoff, Martin; Lefebvre, W.; Rigutti, Lorenzo

doi:10.1017/s1431927621000544

Cited by 4 publications

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“…Though widely applied in the study of semiconductors, its results should be critically verified through an accurate consideration of the physical effects limiting its performances. Important limitations, related to the occurrence of experimental errors, affect the technique in the case of most types of technologically relevant compound semiconductors, such as oxides, − classical III–V, − and III-nitrides. − It is now ascertained that the atomic species constituting compound semiconductors present different behaviors with respect to field evaporation, which may translate into specific detection efficiencies and to subsequent errors in the measurement of compositions. , …”

Section: Introductionmentioning

confidence: 99%

Surface Dynamics of Field Evaporation in Silicon Carbide

et al. 2023

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Silicon carbide (SiC) may be considered as a model system for the study of field ion evaporation of carbides, which must be understood to perform accurate analyses of these systems by atom probe tomography (APT). As for other wide-bandgap semiconductors, the measurement of the composition of SiC by APT presents biases depending on the experimental parameters. Unlike silicon, carbon is characterized by a complex surface behavior, including the formation of molecules and the tendency to produce correlated evaporation. Furthermore, the spatial precision of three-dimensional (3D) reconstructions is strongly degraded in the direction parallel to the specimen surface, which points out to a strong roughening or dynamic degradation of the surface. This is confirmed by field ion microscopy (FIM) analysis, which reveals that atoms may move on the specimen surface under the influence of the high electric field. This complex surface behavior eventually translates into hidden detection events and, therefore, to errors in the measurement of composition.

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