Behavior model for series connected high voltage IGBTs

Sang, Yu; Lu, Ting; Zhao, Zhengming; Ji, Shiqi

doi:10.1109/itec-ap.2014.6940844

Cited by 5 publications

(2 citation statements)

References 4 publications

(2 reference statements)

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“…For circuit designers, who only care about the outer voltage and current characteristics of IGBTs, they turned to an alternative approach, behaviour model, which uses circuitry to describe the voltage and current behaviours of IGBT terminals, offers a simple, fast, and low cost solution to study IGBT switching behaviours for IGBT users. Sang et al [12] developed an IGBT model emphasising on its tail current stage through curve fitting and compensation technique. The tail current stage lasts relatively long and is easy for curve fitting.…”

Section: Introductionmentioning

confidence: 99%

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Turn‐off analysis of FS‐IGBTs based on a simplified analytical model

Ding

Xing

et al. 2017

IET Power Electronics

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Normally for IGBTs five stages can be identified during Turn-Off transient, among which stage 3 and 4 are most complicated and time consuming in calculation, due to its intrinsically complicated physics process. In this paper, through extensive experiments, we found an interesting phenomenon that in stage 3 the slope of the driving gate voltage is linearly related to the FS-IGBT voltage and current, which greatly simplifies modeling and calculation. In stage 4, we further simplify the model by assuming (i) no interactive effects between the redistribution current and combination current; (ii) the base excess carrier density at depletion boundary far less than that at FSL boundary; (iii) The total charge in the base only relating to carrier life time. With these simplifications, equivalent circuit for each stage with less calculation efforts is developed, and the running time of the simulation under Matlab is less than one second. A double-pulse testing platform was built. The experimental results for both test beds with single IGBT and two IGBTs in series connection match the proposed model developed in Matlab pretty well, under quite different operating conditions, with the maximum error on both I L-E off and V DC-E off <17%.

show abstract

Section: Introductionmentioning

confidence: 99%

“…Sang et al . [12] developed an IGBT model emphasising on its tail current stage through curve fitting and compensation technique. The tail current stage lasts relatively long and is easy for curve fitting.…”

Section: Introductionmentioning

confidence: 99%

Turn‐off analysis of FS‐IGBTs based on a simplified analytical model

Ding

Xing

et al. 2017

IET Power Electronics

View full text Add to dashboard Buy / Rent full text

show abstract

Behavior model for series connected high voltage IGBTs

Cited by 5 publications

References 4 publications

Turn‐off analysis of FS‐IGBTs based on a simplified analytical model

Turn‐off analysis of FS‐IGBTs based on a simplified analytical model

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