Graphene is an ideal thin membrane substrate for creating molecule-scale devices. Here we demonstrate a scalable method for creating extremely small structures in graphene with atomic precision. It consists of inducing defect nucleation centers with energetic ions, followed by edge-selective electron recoil sputtering. As a first application, we create graphene nanopores with radii as small as 3 Å, which corresponds to 10 atoms removed. We observe carbon atom removal from the nanopore edge in situ using an aberration-corrected electron microscope, measure the crosssection for the process, and obtain a mean edge atom displacement energy of 14.1 AE 0.1 eV. This approach does not require focused beams and allows scalable production of single nanopores and arrays of monodisperse nanopores for atomic-scale selectively permeable membranes.ion beam irradiation | atomic displacement | electron microscopy F abricating device structures with the precision of single atoms has long been a goal of nanoscale science (1). The recent advent of graphene (2, 3) provides an ideal thin membrane substrate to achieve this goal. Solid-state nanopore devices in thin membranes are of particular interest because they allow the localization, detection, and characterization of single DNA or protein molecules (4, 5). Nanopores in graphene extend this capability to transelectrode sensors and permeable membranes with atomicscale resolution (6). But the development and wide-scale application of such devices is severely limited by the need for atomicscale focused beams for their fabrication (7,8). Here we show how nanopores in graphene can be fabricated with atomic precision without the need for such focused beams.From the study of electron and ion beam-induced damage in graphene-based materials, it is known there is a minimum recoil energy required to remove an atom from the interior of the lattice, called the displacement energy E d (9-11). This threshold entails a minimum kinetic energy for the incident particle to displace an interior atom. There is some controversy over the precise displacement energy for an atom in a graphene lattice (10-15), but experiments have clearly shown that 60 and 80 keV electrons are below this threshold (16,17). Topological defects that do not involve carbon atom removal may also be transiently induced in graphene (18).Recently experiments have also shown that graphene edge atoms can be removed by 80 keV electrons in a transmission electron microscope (TEM) (16). Here we demonstrate that edgeatom removal can be nucleated in the interior of the lattice by low-energy ion beam exposure. We then show that subsequent growth of nanopores in graphene can be effected with atomicscale precision and repeatability with unfocused, subthreshold electron beams.
ResultsWe started with suspended graphene (Fig. 1A) grown by chemical vapor deposition on annealed copper (19), which was then transferred to holey carbon TEM grids. We created pore nucleation sites with an argon ion beam ( Fig. 1 B and C) by cooling the sample to 148 ...