Bandwidth Analysis of a p-π-n Si Photodetector

Ahmed, Mohammed Sh.; AL-Tulaihi, Yassir Th.; Alrikabi, Haider Th.Salim

doi:10.5120/ijca2016908097

Cited by 2 publications

(2 citation statements)

References 7 publications

(7 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The intensity of the illumination of the plasma is related to the current of the plasma, this is because the current increased the secondary collisions of the free electrons. These results coincide with the results of the researcher [17][18][19][20][21] which are in the same research line.…”

Section: Resultssupporting

confidence: 91%

Characterization and analysis of N2 plasma DC glow discharge at different voltage

Haji¹

2023

PEN

View full text Add to dashboard Cite

In this work, the plasma glow discharge characteristics of nitrogen gas will be studied and analyzed at different pressures, and we will study the effect of these pressures on the I-V curve, the Panchen curve, the I-P curve, the current-voltage curve, and their effect on the electrical conductivity of the generated plasma. The distance between the glow electrodes was (15.5) cm. The pressures that were used in this work were (0.025, 0.05, 1.5, 5) T. The results indicated that the discharge was operating in the atypical glow region. On the other hand, the discharge current decreased as the gas pressure increased. On the other hand. Also, the conductivity decreased in its values with the increase in applied pressure as well as the voltage of the plasma focus.

show abstract

Section: Resultssupporting

confidence: 91%

Characterization and analysis of N2 plasma DC glow discharge at different voltage

Haji¹

2023

PEN

View full text Add to dashboard Cite

show abstract

“…[14][15][16][17] Still, one of their biggest challenges today is the frequency response of TMDCbased devices for telecommunications or information processing. [18][19][20][21][22][23][24][25][26][27][28][29][30] For photodetectors using TMDCs as the lightabsorbing medium, this is particularly crucial.…”

mentioning

confidence: 99%

30 GHz plasmonic slot MoTe2 photodetector integrated with silicon photonic circuits at telecom wavelength

Wang¹,

Nouri

Dalir

et al. 2023

Ultrafast Phenomena and Nanophotonics XXVII

View full text Add to dashboard Cite

An experimental demonstration of a waveguide-integrated plasmonic slot photodetector based on MoTe2 with 30 GHz 3 dB roll-off bandwidth at telecom wavelength. To overcome the intrinsic low carrier mobility and weak light-matter interaction when applying two-dimensional material for optoelectronic devices, here we numerically and experimentally show a novel concept of the plasmonic slot structure to eliminate the transit time constant (τ=L^2/μV) from the device which is related to the material mobility. The nanometer-wide plasmonic slot offers a 'squeezed' mode that allows the 2d material can effectively absorb the light via band-to-band transitions with an overlap factor (Г) increasing more than 3 times compared to the bare waveguide structure. The ultra-narrow slot width reduces the carriers' drift route to tens of nanometers and is only limited by the RC time constant. The MoTe2 serves as the semiconducting light-absorbing material with its layer-dependent bandgap that encompasses the standard O-band wavelength for communications (1,260 nm -1 ,360 nm). The device's static performance under 1 V bias voltage also shows a high photoresponsivity of 0.8 A/W at 1310 nm with a low dark current of 90 nA. Furthermore, we study the slot width-dependent frequency response and static response to validate our concept, which shows that both the frequency and static response are inversely proportional to the slot width. The concept is not restricted to materials and the platform. This may pave the way for developing high-performance optoelectronic devices with materials that have unique optical and electric properties but suffer from low mobilities. [1][2][3][4][5][6][7][8][9][10][11][12][13] It has been shown that introducing plasmonic structures, cavities, resonators, or nanoparticles into waveguide-loaded systems can improve light-matter interactions. [14][15][16][17] Still, one of their biggest challenges today is the frequency response of TMDCbased devices for telecommunications or information processing. [18][19][20][21][22][23][24][25][26][27][28][29][30] For photodetectors using TMDCs as the lightabsorbing medium, this is particularly crucial.

show abstract

Bandwidth Analysis of a p-π-n Si Photodetector

Cited by 2 publications

References 7 publications

Characterization and analysis of N2 plasma DC glow discharge at different voltage

Characterization and analysis of N2 plasma DC glow discharge at different voltage

30 GHz plasmonic slot MoTe2 photodetector integrated with silicon photonic circuits at telecom wavelength

Contact Info

Product

Resources

About