Bandgap tuning in highly c-axis oriented Zn1−xMgxO thin films

Kumar, Parmod; Malik, Hitendra K.; Ghosh, Arnab; Thangavel, R.; Asokan, K.

doi:10.1063/1.4809575

Cited by 98 publications

(39 citation statements)

References 33 publications

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“…The values of the strain are listed in Table 1. The average crystallite size (D) was calculated from the full width at half maximum (FWHM) of (311) peak by using Scherer's equation [16] …”

Section: Resultsmentioning

confidence: 99%

A study on structural and magnetic properties of NixZn1-xFe2O4 (0 ≤ x ≤ 0.6) ferrite nanoparticles

Kumar¹,

Kumar²,

Rana³

et al. 2015

Appl. Sci. Lett.

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A series of nickel doped zinc ferrite NixZn1-xFe2O4 (0 ≤ x ≤ 0.6) nanoparticles were prepared using sol-gel method. The influence of Ni 2+ ions substitution on the structural and magnetic properties of ZnFe2O4 spinel ferrites were subsequently studied. The XRD patterns of as synthesized samples confirm the single crystalline phase formation without any trace of impurity. The lattice parameter decreases linearly from 8.368 Å to 8.264 Å, whereas crystallite size increases with the increase in Ni 2+ ion concentration. HRTEM images also confirm the nano size particle formation. From the HRTEM images this has been observed that the particle size lies in the range 15-45 nm. The saturation magnetization increases from 26.70 emu/gm for x = 0.0 to 45.85 emu/gm for x = 0.4 with the increase in nickel content. The increase in saturation magnetisation is also supported by spin concentration values as calculated from EPR study.

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“…The values of the strain are listed in Table 1. The average crystallite size (D) was calculated from the full width at half maximum (FWHM) of (311) peak by using Scherer's equation [16] …”

Section: Resultsmentioning

confidence: 99%

A study on structural and magnetic properties of NixZn1-xFe2O4 (0 ≤ x ≤ 0.6) ferrite nanoparticles

Kumar¹,

Kumar²,

Rana³

et al. 2015

Appl. Sci. Lett.

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“…This absorption band has a wavelength region of 280-340 nm, which is shorter than the absorption region (360-400 nm) of ZnO. Thus, the one absorption band (280-340 nm) is an absorption result of the Mg x Zn 1-x O layer with Mg content (x value) less than 0.3 for the as-deposited Mg x Zn 1-x O [10,11,30].…”

Section: Resultsmentioning

confidence: 99%

Band-modulation of MgZnO/ZnO Metal-semiconductor-metal Photodetectors

Hwang

Lin

2018

ITM Web Conf.

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Abstract. Magnesium (Mg) diffusion behavior on the band modulation of MgxZn1-xO/ZnO metal-semiconductor-metal photodetectors (MSM-PDs) was studied. As the annealing temperature increases, Mg atoms diffuse from MgxZn1-xO into the underlying ZnO layer, which modulates the detection band of the fabricated MSM-PDs from two distinct bands into one band. For the annealing temperature lower than 900 ºC, two detection bands were achieved located in the wavelength region of 280-320 nm and 360-400 nm, attributed to the absorption of the MgxZn1-xO and the ZnO layer, respectively. When the annealing temperature is raised to 900 ºC, the MgxZn1-xO/ZnO bi-layer becomes homogenized into a single MgxZn1-xO layer, leading to only one detection band with a wavelength region of 280-340 nm. In the photoluminescence measurement, the as-deposited MgxZn1-xO/ZnO bi-layer demonstrates two distinct emission peaks located at about 340 and 400 nm for the absorption of the MgxZn1-xO and ZnO layers, whereas only one emission peak of 355 nm was observed in the 900 ºC-annealed MgxZn1-xO/ZnO bi-layer.

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“…The large exciton binding energy (60 meV, more than twice that of GaN), of ZnO makes it preferred material over other transparent conductive oxides [5]. Apart from this, ZnO is a very promising because its thin films can be prepared at relatively lower temperature by several growth techniques such as solgel method, sputtering, e-beam or atomic layer deposition (ALD) [6][7][8][9]. Low temperature (LT) ZnO can also be grown using molecular beam epitaxy (MBE), but growth temperatures used there are at the level of 350-500 o C [10,11], which is outside the low thermal budget of crossbar memories or organic electronics.…”

Section: Introductionmentioning

confidence: 98%

Bandgap tuning in highly c-axis oriented Zn1−xMgxO thin films

Cited by 98 publications

References 33 publications

A study on structural and magnetic properties of NixZn1-xFe2O4 (0 ≤ x ≤ 0.6) ferrite nanoparticles

A study on structural and magnetic properties of NixZn1-xFe2O4 (0 ≤ x ≤ 0.6) ferrite nanoparticles

Band-modulation of MgZnO/ZnO Metal-semiconductor-metal Photodetectors

Role of growth temperature on the structural, optical and electrical properties of ZnO thin films

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