Bandgap engineering of single layer graphene by randomly distributed nanoparticles

Al-Amin, Chowdhury; Vabbina, Phani Kiran; Karabiyik, Mustafa; Raju, Salahuddin; Wang, Chunlei; Pala, Nezih

doi:10.1007/s10854-016-4722-z

Cited by 4 publications

(5 citation statements)

References 25 publications

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“…Thus, 14.5 meV band gap is found near to K-point as it could be seen from theFigure 6.3 insets. This band gap is comparable to the experimental finding in the Ref [92]. (7.36 meV) where ZnO nanoparticles are randomly distributed to tune the band gap by varying the particles size and densities.…”

supporting

confidence: 88%

“…A large exciton binding energy of ~60 meV (2.4 times of the room-temperature thermal energy) and a wide band gap (3.37 eV) of ZnO [91] make it useful to open and tune band gap in graphene [75,92]. Moreover, the amalgamation of ZnO with graphene could open a new route to heterostructure for optoelectronic devices such as solar cells, field emission, displays, sensors, light emitting, photocatalysis and detection devices in UV-visible spectral range [201,202].…”

Section: Resultsmentioning

confidence: 99%

“…Most of these methods require precision tools or complex lithographic process to achieve band gap even though it could be negligible sometimes. Pala et al investigated a novel process to open band gap by decorating graphene using different nanoparticles where special attention was given to ZnO nanoseeds [92].…”

Section: Introductionmentioning

confidence: 99%

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Band Gap Engineering of 2D Nanomaterials and Graphene Based Heterostructure Devices

Monshi¹

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supporting

confidence: 88%

Section: Resultsmentioning

confidence: 99%

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Band Gap Engineering of 2D Nanomaterials and Graphene Based Heterostructure Devices

Monshi¹

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“…In spite of its impressive and excellent properties, graphene offers limited semiconducting applications due to the absence of a bandgap in its electronic structure. Graphene is basically a zero bandgap semiconductor or a semi-metal [6][7]. The absence of bandgap in graphene significantly affects several applications, particularly semiconducting applications where considerable bandgap is requisite.…”

Section: Introductionmentioning

confidence: 99%

Novel Synthesis and Promising Applications of Graphene Nanostructures

Ijeomah¹,

Samsuri²,

Zawawi³

2017

IJETS

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The transition from semi-metallic to semiconducting states in graphene has ushered in nanostructured materials with novel and enhanced electrical, mechanical, physiochemical and optical properties. The scope of graphene and its potential for novel applications could be substantially impacted by this transition. This article reviews the properties, recent synthesis methodologies and emerging applications of this wonder nanomaterial. The differentiations among the merits and challenges of current techniques are made, aiming to offer evidences to develop scalable and novel synthesis methodologies. The emphasis is on the synthesis, and the possible emerging promising applications arising from these conversion methods, and their overwhelming implications on our current knowledge of graphene and graphene nanostructures.

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“…It has the potential to be used as a future material for post-silicon electronics 5 6 . There is also a possibility of molecular scale electronics based on graphene because band gap opening is possible in graphene nano-ribbons 7 8 9 . There are various techniques for the synthesis of graphene among which chemical vapour deposition (CVD) is popular 10 11 12 13 14 .…”

mentioning

confidence: 99%

Transfer free graphene growth on SiO2 substrate at 250 °C

Vishwakarma

Rosmi

Takahashi

et al. 2017

Sci Rep

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Low-temperature growth, as well as the transfer free growth on substrates, is the major concern of graphene research for its practical applications. Here we propose a simple method to achieve the transfer free graphene growth on SiO2 covered Si (SiO2/Si) substrate at 250 °C based on a solid-liquid-solid reaction. The key to this approach is the catalyst metal, which is not popular for graphene growth by chemical vapor deposition. A catalyst metal film of 500 nm thick was deposited onto an amorphous C (50 nm thick) coated SiO2/Si substrate. The sample was then annealed at 250 °C under vacuum condition. Raman spectra measured after the removal of the catalyst by chemical etching showed intense G and 2D peaks together with a small D and intense SiO2 related peaks, confirming the transfer free growth of multilayer graphene on SiO2/Si. The domain size of the graphene confirmed by optical microscope and atomic force microscope was about 5 μm in an average. Thus, this approach will open up a new route for transfer free graphene growth at low temperatures.

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Bandgap engineering of single layer graphene by randomly distributed nanoparticles

Cited by 4 publications

References 25 publications

Band Gap Engineering of 2D Nanomaterials and Graphene Based Heterostructure Devices

Band Gap Engineering of 2D Nanomaterials and Graphene Based Heterostructure Devices

Novel Synthesis and Promising Applications of Graphene Nanostructures

Transfer free graphene growth on SiO2 substrate at 250 °C

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