1996
DOI: 10.1103/physrevb.53.9930
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Band structure of holes inp-type δ-doping quantum wells and superlattices

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Cited by 54 publications
(47 citation statements)
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“…Appealing to the second term in Eq. (36) of [69] and the procedure described therein, we include it into our model through a small constant shift of 6.5 meV (1.5 meV) for HH (LH) bands towards the conduction bands. To summarize many-body corrections included in Eq.…”
Section: Appendix B: Microscopic Modelmentioning
confidence: 99%
“…Appealing to the second term in Eq. (36) of [69] and the procedure described therein, we include it into our model through a small constant shift of 6.5 meV (1.5 meV) for HH (LH) bands towards the conduction bands. To summarize many-body corrections included in Eq.…”
Section: Appendix B: Microscopic Modelmentioning
confidence: 99%
“…For over a decade the properties of single and multiple δ-doped GaAs structures have been extensively studied both theoretically and experimentally [1][2][3][4][5][6][7][8]. The planar doping is used in devices to give rise to quantum confinement of carriers.…”
Section: Introductionmentioning
confidence: 99%
“…During the last few years, the super-cell k · p method has been adapted to quantum wells and superlattices (SLs) ; Sipahi et al (1996)). Using this approach, one can self-consistently solve the 8 × 8 Kane multiband effective mass equation (EME) for the charge distribution ( Sipahi et al (1998)).…”
Section: Theoretical Band Structure and Luminescence Spectra Calculatmentioning
confidence: 99%