Band Alignments, Valence Bands, and Core Levels in the Tin Sulfides SnS, SnS2, and Sn2S3: Experiment and Theory

Whittles, Thomas J.; Burton, Lee A.; Skelton, Jonathan M.; Walsh, Aron; Veal, T. D.; Dhanak, Vin

doi:10.1021/acs.chemmater.6b00397

Cited by 192 publications

(199 citation statements)

References 92 publications

Supporting

Mentioning

163

Contrasting

Order By: Relevance

“…The superior photocatalytic performance of the ZnO–Sn 2 S 3 core–shell structure is attributable to the band relation of the heterostructure. Notably, Sn 2 S 3 is a narrow-bandgap semiconductor with a reported electron affinity of approximately 3.56 eV [17], whereas ZnO is an n-type wide-bandgap semiconductor with a reported electron affinity of 4.35 eV [28]. These data may provide reliable references to approximately estimate the relative band edge positions of the two semiconductors.…”

Section: Resultsmentioning

confidence: 99%

Photoexcited Properties of Tin Sulfide Nanosheet-Decorated ZnO Nanorod Heterostructures

Liang

Lung

2017

Nanoscale Res Lett

View full text Add to dashboard Cite

In this study, ZnO–Sn2S3 core–shell nanorod heterostructures were synthesized by sputtering Sn2S3 shell layers onto ZnO rods. The Sn2S3 shell layers consisted of sheet-like crystallites. A structural analysis revealed that the ZnO–Sn2S3 core–shell nanorod heterostructures were highly crystalline. In comparison with ZnO nanorods, the ZnO–Sn2S3 nanorods exhibited a broadened optical absorption edge that extended to the visible light region. The ZnO–Sn2S3 nanorods exhibited substantial visible photodegradation efficiency of methylene blue organic dyes and high photoelectrochemical performance under light illumination. The unique three-dimensional sheet-like Sn2S3 crystallites resulted in the high light-harvesting efficiency of the nanorod heterostructures. Moreover, the efficient spatial separation of photoexcited carriers, attributable to the band alignment between ZnO and Sn2S3, accounted for the superior photocatalytic and photoelectrochemical properties of the ZnO–Sn2S3 core–shell nanorod heterostructures.

show abstract

Section: Resultsmentioning

confidence: 99%

Photoexcited Properties of Tin Sulfide Nanosheet-Decorated ZnO Nanorod Heterostructures

Liang

Lung

2017

Nanoscale Res Lett

View full text Add to dashboard Cite

show abstract

“…We presented novel anodization protocol and photo-electrochemical results for anodic TiO 2 nanotubes grown with different diameter sizes (21,35, 56 and 95 nm) utilized as highly ordered n-type conductive scaffold for inorganic chromophore (Sn-S-Se). While downscaling the nanotube diameter significantly increased the number of nanotubes per square unit and thus the active surface area increased as well, we found that the photo-electrochemical response was identical and thus independent of the TiO 2 diameter nanotube size, but it correlated with the thickness of the nanotube layers.…”

Section: Discussionmentioning

confidence: 99%

TiO₂ Nanotube/Chalcogenide-Based Photoelectrochemical Cell: Nanotube Diameter Dependence Study

et al. 2017

View full text Add to dashboard Cite

We present photo-electrochemical results for anodic TiO 2 nanotube layers grown with different diameter sizes (21, 35, 56 and 95 nm) with a thickness of approx. 560 nm using a novel anodization protocol. These tube layers were utilized as highly ordered n-type conductive scaffold for the inorganic chromophore Sn-S-Se. While downscaling the nanotube diameter significantly increased the number of nanotubes per square unit (from 5.6E+09 to 7.2E+10 pcs/cm 2 ) and thus the active surface area increased as well, we found that the photoelectrochemical response in the UV light was identical and thus independent of the TiO 2 nanotube diameter in the range of nanotube diameters from 35 to 95 nm. Further, we demonstrate that a heterostructured photo-electrochemical cell consisting of TiO 2 nanotubes sensitized with crystalline Sn-S-Se chromophore showed higher photocurrent density (from 6 to 32 µA/cm 2 for the wavelength of 460 nm) with increasing nanotube diameter size. Upon detailed SEM analyses it was revealed that the Sn-S-Se was infilled in all nanotube layers approximately to one third of the thickness. Therefore, this photocurrent increase with increasing tube diameter can be ascribed to better interfacial contact (and improved charge transport) facilitated between the chromophore and nanotube walls.

show abstract

“…[39,43,44,47] Binding energies of S 2p 3/2 (162.7 eV) and S 2p 1/2 (163.9 eV) seen in Figure 6b are also within the range of values reported for 2H-MoS 2 . [39,40,43,44,[47][48][49]51,52] Additionally, weak doublets at 161.8 and 163.3 eV as well as 163.9 and 165.1 eV were assigned to SnS [80] and CS bonding, respectively. Carbon and oxygen were present in multiple chemical environments, as revealed by their broad peaks ( Figure S2b,c, Supporting Information).…”

Section: Compositionmentioning

confidence: 99%

Atomic Layer Deposition of Crystalline MoS₂ Thin Films: New Molybdenum Precursor for Low‐Temperature Film Growth

Mattinen

Hatanpää

Sarnet

et al. 2017

Adv Materials Inter

110

View full text Add to dashboard Cite

Compared to the most well-known 2D material, graphene, which is a semi-metal, the semiconducting 2H phase of MoS 2 is advantageous in having a band gap suitable for electronic applications. In bulk form, MoS 2 has an indirect band gap of 1.3 eV, which increases as a function of decreasing film thickness. In monolayer MoS 2 (thickness ≈0.6 nm), the band gap becomes direct with a width of 1.8 eV. [1] Importantly, to meet the requirements of different applications, properties of MoS 2 and other TMDCs can be tuned by controlling the thickness, [1] doping and alloying, [5][6][7][8] surface modification and functionalization, [9][10][11] strain, [12,13] and by creating heterostructures with other 2D materials. [6,[14][15][16] The appealing properties of TMDCs have led to a wide range of proposed applications. MoS 2 has been extensively studied as a channel material in conventional field-effect transistors, [17][18][19][20][21] as well as phototransistors and other optoelectronic devices. [16,21,22] The 2D structure of TMDCs plays a crucial role in possible applications relying on more exotic quantum phenomena, such as valleytronics. [23,24] MoS 2 has also shown promise in, for example, catalysis, [25] batteries, [26] photovoltaics, [27] sensors, [28] and medicine. [29] The production of high-quality, large-area MoS 2 films with a thickness controllable down to a monolayer, as required in many of the aforementioned applications, still remains a major challenge. Additionally, in many cases, the processing temperature should be kept as low as possible in order to avoid damaging sensitive substrates, such as polymers or nanostructures. Initially, flakes of monolayer MoS 2 were produced from natural MoS 2 crystals using micromechanical exfoliation, a topdown method capable of producing high-quality monolayers, albeit with poor throughput as well as limited control over flake thickness and dimensions. [4,30,31] Liquid-phase exfoliation of bulk crystals, on the other hand, offers good scalability, but often suffers from limited flake size, poor crystallinity, or contamination. [4,31,32] Bottom-up methods offer a more controllable way to produce MoS 2 films. High-quality MoS 2 thin films are most commonly deposited by chemical vapor deposition (CVD) or sulfurization of metal or metal oxide thin films. The most common Molybdenum disulfide (MoS 2 ) is a semiconducting 2D material, which has evoked wide interest due to its unique properties. However, the lack of controlled and scalable methods for the production of MoS 2 films at low temperatures remains a major hindrance on its way to applications. In this work, atomic layer deposition (ALD) is used to deposit crystalline MoS 2 thin films at a relatively low temperature of 300 °C. A new molybdenum precursor, Mo(thd) 3 (thd = 2,2,6,6-tetramethylheptane-3,5-dionato), is synthesized, characterized, and used for film deposition with H 2 S as the sulfur precursor. Self-limiting growth with a low growth rate of ≈0.025 Å cycle −1 , straightforward thickness control, and large-area uni...

show abstract

Band Alignments, Valence Bands, and Core Levels in the Tin Sulfides SnS, SnS₂, and Sn₂S₃: Experiment and Theory

Cited by 192 publications

References 92 publications

Photoexcited Properties of Tin Sulfide Nanosheet-Decorated ZnO Nanorod Heterostructures

Photoexcited Properties of Tin Sulfide Nanosheet-Decorated ZnO Nanorod Heterostructures

TiO₂ Nanotube/Chalcogenide-Based Photoelectrochemical Cell: Nanotube Diameter Dependence Study

Atomic Layer Deposition of Crystalline MoS₂ Thin Films: New Molybdenum Precursor for Low‐Temperature Film Growth

Contact Info

Product

Resources

About

Band Alignments, Valence Bands, and Core Levels in the Tin Sulfides SnS, SnS2, and Sn2S3: Experiment and Theory

Cited by 192 publications

References 92 publications

Photoexcited Properties of Tin Sulfide Nanosheet-Decorated ZnO Nanorod Heterostructures

Photoexcited Properties of Tin Sulfide Nanosheet-Decorated ZnO Nanorod Heterostructures

TiO2 Nanotube/Chalcogenide-Based Photoelectrochemical Cell: Nanotube Diameter Dependence Study

Atomic Layer Deposition of Crystalline MoS2 Thin Films: New Molybdenum Precursor for Low‐Temperature Film Growth

Contact Info

Product

Resources

About

Band Alignments, Valence Bands, and Core Levels in the Tin Sulfides SnS, SnS₂, and Sn₂S₃: Experiment and Theory

TiO₂ Nanotube/Chalcogenide-Based Photoelectrochemical Cell: Nanotube Diameter Dependence Study

Atomic Layer Deposition of Crystalline MoS₂ Thin Films: New Molybdenum Precursor for Low‐Temperature Film Growth