Author Correction: Impacts of surface depletion on the plasmonic properties of doped semiconductor nanocrystals

Zandi, Omid; Agrawal, Ankit; Shearer, Alex B.; Reimnitz, Lauren C.; Dahlman, Clayton J.; Staller, Corey M.; Milliron, Delia J.

doi:10.1038/s41563-019-0470-9

Cited by 2 publications

(3 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In2O3 NCs have been used as model system to study the contributing factor of LSPR in semiconductor NCs such as crystal structure, 15 NC size, 56 dopant distribution, 57 surface depletion, 58 strain effect, 30 and ensemble broadening 59 (Figure 1. 30 It is proposed that the relatively similar sizes between Ce 4+ and In 3+ ions minimize the lattice strain and lead to high electron mobility and thus the narrow LSPR band width.…”

Section: Contributing Factors Of Lspr In Semiconductor Ncsmentioning

confidence: 99%

See 1 more Smart Citation

Plasmon-induced carrier polarization in semiconductor nanocrystals

et al. 2018

View full text Add to dashboard Cite

Spintronics and valleytronics are emerging quantum electronic technologies that rely on using electron spin and multiple extrema of the band structure (valleys), respectively, as additional degrees of freedom. There are also collective properties of electrons in semiconductor nanostructures that potentially could be exploited in multifunctional quantum devices. Specifically, plasmonic semiconductor nanocrystals offer an opportunity for interface-free coupling between a plasmon and an exciton. However, plasmon-exciton coupling in single-phase semiconductor nanocrystals remains challenging because confined plasmon oscillations are generally not resonant with excitonic transitions. Here, we demonstrate a robust electron polarization in degenerately doped InO nanocrystals, enabled by non-resonant coupling of cyclotron magnetoplasmonic modes with the exciton at the Fermi level. Using magnetic circular dichroism spectroscopy, we show that intrinsic plasmon-exciton coupling allows for the indirect excitation of the magnetoplasmonic modes, and subsequent Zeeman splitting of the excitonic states. Splitting of the band states and selective carrier polarization can be manipulated further by spin-orbit coupling. Our results effectively open up the field of plasmontronics, which involves the phenomena that arise from intrinsic plasmon-exciton and plasmon-spin interactions. Furthermore, the dynamic control of carrier polarization is readily achieved at room temperature, which allows us to harness the magnetoplasmonic mode as a new degree of freedom in practical photonic, optoelectronic and quantum-information processing devices.

show abstract

Section: Contributing Factors Of Lspr In Semiconductor Ncsmentioning

confidence: 99%

“…systematically investigated electrochemical modulation of the ITO NCs with different sizes and Sn doping concentrations 58. They observed the significant shift of LSPR frequency for small ITO NCs with low doping concentrations during the electrochemical charging/discharging (Figure1.4 c).…”

mentioning

confidence: 99%

Plasmon-induced carrier polarization in semiconductor nanocrystals

et al. 2018

View full text Add to dashboard Cite

show abstract

“…It should be noted that such ultra-narrow (< 1nm) depletion layers are rarely reported (for example,S n:In 2 O 3 nanocrystals). [30] Therelationships between the W,particle size,and N d are illustrated in Figure 5d.S amples with larger NP sizes in the MC had relatively lower concentrations of interfacial V O in the bulk, resulting in relatively lower N d and higher W values.W ith ah igher W,t he extent of charge recombination was greater owing to the increased hole migration distance, and the resulting lower surface hole density led to slower water oxidation kinetics (Supporting Information, Figure S20).…”

Section: Forschungsartikelmentioning

confidence: 95%

Ultra‐Narrow Depletion Layers in a Hematite Mesocrystal‐Based Photoanode for Boosting Multihole Water Oxidation

2020

View full text Add to dashboard Cite

Significant charge recombination that is difficult to suppress limits the practical applications of hematite (α‐Fe2O3) for photoelectrochemical water splitting. In this study, Ti‐modified hematite mesocrystal superstructures assembled from highly oriented tiny nanoparticle (NP) subunits with sizes of ca. 5 nm were developed to achieve the highest photocurrent density (4.3 mA cm−2 at 1.23 V vs. RHE) ever reported for hematite‐based photoanodes under back illumination. Owing to rich interfacial oxygen vacancies yielding an exceedingly high carrier density of 4.1×1021 cm−3 for super bulk conductivity in the electrode and a large proportion of ultra‐narrow depletion layers (<1 nm) inside the mesoporous film for significantly improved hole collection efficiency, a boosting of multihole water oxidation with very low activation energy (Ea=44 meV) was realized.

show abstract

Author Correction: Impacts of surface depletion on the plasmonic properties of doped semiconductor nanocrystals

Cited by 2 publications

References 0 publications

Plasmon-induced carrier polarization in semiconductor nanocrystals

Plasmon-induced carrier polarization in semiconductor nanocrystals

Ultra‐Narrow Depletion Layers in a Hematite Mesocrystal‐Based Photoanode for Boosting Multihole Water Oxidation

Contact Info

Product

Resources

About