Auger suppression in CdHgTe heterostructure diodes grown by molecular beam epitaxy using silver as acceptor dopant

Skauli, T.; Steen, H.; Colin, T.; Helgesen, P.; Lovold, S.; Elliott, C.T.; Gordon, Neil T.; Phillips, T. J.; White, A. M.

doi:10.1063/1.115937

Cited by 21 publications

(7 citation statements)

References 9 publications

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“…There have been no systematic experimental studies of the Auger suppression through heterostructure engineering. Clear evidence of Auger suppression from heterobarrier–carrier interactions, however, has been reported widely in the literature. − These experimental results unambiguously demonstrate a reduction in the dark current by realigning the heterostructures through alloy and doping compositions. Dark current is dominated by the thermal generation associated with the Auger mechanism in the narrow bandgap semiconductors .…”

Section: Resultsmentioning

confidence: 96%

Study of the Natural Auger Suppression Mechanism in Heterostructures through Heteroboundary Engineering

Slonopas

Tomkinson

2017

J. Phys. Chem. A

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Planar superlattice devices revolutionized our approach to solid-state technology by reducing the Shockley-Read-Hall losses to negligible levels. Despite these achievements, significant efficiency losses are found in current devices presumably caused by the Auger recombinations. This work present the theoretical considerations of the Auger recombination suppression through heterostructure engineering. It is found that Auger recombinations are suppressed through the heterobarrier-carrier interactions. It is shown that a minima in Auger recombinations exists in type-II and III heterostructures, and can be reached through proper conduction and valence band alignments. Furthermore, the careful consideration of the heterostructure enables natural Auger suppression for high operating temperatures. Dark current based on the optimized heterostructure was computed and found to be over an order of magnitude below the currently reported measurements for the superlattice and QD devices. This research provides crucial information about the underlying physics behind the Auger recombination, enabling future superlattice and quantum dot device optimization.

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Section: Resultsmentioning

confidence: 96%

Study of the Natural Auger Suppression Mechanism in Heterostructures through Heteroboundary Engineering

Slonopas

Tomkinson

2017

J. Phys. Chem. A

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“…Auger suppression translates into a negative differential resistance in the reverse-bias current-voltage (I-V) characteristics, which has been experimentally observed in devices grown by metalorganic vaporphase epitaxy (MOVPE) 2 and molecular-beam epitaxy (MBE) using silver as an acceptor dopant. 3 More recently, Wijewarnasuriya et al 4 reported Auger suppression in LWIR MBE-grown devices using arsenic as an acceptor dopant. Analytical 5 and numerical models 6,7 have been developed in order to study these devices.…”

Section: Introductionmentioning

confidence: 99%

Modeling of LWIR HgCdTe Auger-Suppressed Infrared Photodiodes under Nonequilibrium Operation

Emelie

Velicu

Grein

et al. 2008

Journal of Elec Materi

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The general approach and effects of nonequilibrium operation of Auger-suppressed HgCdTe infrared photodiodes are well understood. However, the complex relationships of carrier generation and dependencies on nonuniform carrier profiles in the device prevent the development of simplistic analytical device models with acceptable accuracy. In this work, finite element methods are used to obtain self-consistent steady-state solutions of PoissonÕs equation and the carrier continuity equations. Experimental current-voltage characteristics between 120 K and 300 K of HgCdTe Auger-suppressed photodiodes with cutoff wavelength of k c = 10 lm at 120 K are fitted using our numerical model. Based on this fitting, we study the lifetime in the absorber region, extract the current mechanisms limiting the dark current in these photodiodes, and discuss design and fabrication considerations in order to optimize future HgCdTe Auger-suppressed photodiodes.

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“…In early work, 11 Auger suppression in MBEgrown HgCdTe heterostructure devices using silver (Ag) as a p-type dopant was demonstrated. However, the use of group V elements as p-type dopants in MBE has been studied extensively due to the larger atomic size of the group V elements, and hence, their lower diffusivity in HgCdTe.…”

Section: Introductionmentioning

confidence: 99%

Nonequilibrium Operation of Arsenic Diffused Long-Wavelength Infrared HgCdTe Photodiodes

Wijewarnasuriya

Emelie

D'Souza

et al. 2008

Journal of Elec Materi

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We demonstrated a device with a unique planar architecture using a novel approach for obtaining low arsenic doping concentrations in long-wavelength (LW) HgCdTe on CdZnTe substrates. HgCdTe materials were grown by molecular beam epitaxy (MBE). We fabricated a p-on-n structure that we term P + /p/N + where the symbol ''p'' is to indicate a drastically reduced extrinsic p-type carrier concentration (on the order of mid 10 15 cm -3 ); P + and N + denote a higher doping density, as well as a higher energy gap, than the photosensitive base p-region. Fabricated devices indicated that Auger suppression is seen in the P + /p/N + architecture at temperatures above 130 K and we obtained a saturation current on the order of 3 mA on 250-lm-diameter devices at 300 K with Auger suppression. Data shows that about a 50% reduction in dark current is achieved at 300 K due to Auger suppression. The onset of Auger suppression voltage is 450 mV at 300 K and 100 mV at 130 K. Results indicate that a reduction of the series resistance could reduce this further. A principal challenge was to obtain low p-type doping levels in the p-region. This issue was overcome using a novel deep diffusion process, thereby demonstrating successfully low-doped p-type HgCdTe in MBE-grown material. Nearclassical spectral responses were obtained at 250 K and at 100 K with cut-off wavelengths of 7.4 lm and 10.4 lm, respectively. At 100 K, the measured nonantireflection-coated quantum efficiency was 0.57 at 0.1 V under backside illumination.

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Auger suppression in CdHgTe heterostructure diodes grown by molecular beam epitaxy using silver as acceptor dopant

Cited by 21 publications

References 9 publications

Study of the Natural Auger Suppression Mechanism in Heterostructures through Heteroboundary Engineering

Study of the Natural Auger Suppression Mechanism in Heterostructures through Heteroboundary Engineering

Modeling of LWIR HgCdTe Auger-Suppressed Infrared Photodiodes under Nonequilibrium Operation

Nonequilibrium Operation of Arsenic Diffused Long-Wavelength Infrared HgCdTe Photodiodes

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