Auger neutralization and ionization processes for charge exchange between slow noble gas atoms and solid surfaces

Monreal, R.

doi:10.1016/j.progsurf.2014.01.001

Cited by 48 publications

(22 citation statements)

References 172 publications

(236 reference statements)

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“…If positive ions manage to reach the electrode grids, they can neutralize with the metal, or they may accumulate on the surfaces if neutralization is prevented by oxide layers or monolayers of solid xenon on metal surfaces [37]. Ion neutralization on metal surfaces can produce Auger neutralization electrons to discharge the combination energy [38].…”

Section: The Drift Velocity Of O −mentioning

confidence: 99%

Investigation of background electron emission in the LUX detector

Akerib¹,

Alsum²,

Araújo³

et al. 2020

Phys. Rev. D

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Dual-phase xenon detectors, as currently used in direct detection dark matter experiments, have observed elevated rates of background electron events in the low energy region. While this background negatively impacts detector performance in various ways, its origins have only been partially studied. In this paper we report a systematic investigation of the electron pathologies observed in the LUX dark matter experiment. We characterize different electron populations based on their emission intensities and their correlations with preceding energy depositions in the detector. By studying the background under different experimental conditions, we identified the leading emission mechanisms, including photoionization and the photoelectric effect induced by the xenon luminescence, delayed emission of electrons trapped under the liquid surface, capture and release of drifting electrons by impurities, and grid electron emission. We discuss how these backgrounds can be mitigated in LUX and future xenon-based dark matter experiments.

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Section: The Drift Velocity Of O −mentioning

confidence: 99%

Investigation of background electron emission in the LUX detector

Akerib¹,

Alsum²,

Araújo³

et al. 2020

Phys. Rev. D

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show abstract

“…However, they used parameters which were fitted for a specific ion-surface combination (He + → Ge) and applied them as if they were fixed parameters of the model. A nice overview of the various theoretical models used to describe the neutralization of incoming ions on a surface can be found in a recent review paper by Monreal [15].…”

Section: Introductionmentioning

confidence: 99%

Quantitative modeling of secondary electron emission from slow-ion bombardment on semiconductors

2019

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When slow ions incident on a surface are neutralized, the excess potential energy is passed on to an electron inside the surface, leading to emission of secondary electrons. The microscopic description of this process, as well as the calculation of the secondary electron yield, is a challenging problem due to its complexity as well as its sensitivity to surface properties. One of the first quantitative descriptions was articulated in the 1950s by Hagstrum, who based his calculation on a parametrization of the density of states of the material. In this paper, we present a model for calculating the secondary electron yield, derived from Hagstrum's initial approach. We use first-principles density functional theory calculations to acquire the necessary input and introduce the concept of electron cascades to Hagstrum's model in order to improve the calculated spectra, as well as remove its reliance on fitting parameters. We apply our model to He + and Ne + ions incident on Ge(111) and Si(111) and obtain yield spectra that match closely to the experimental results of Hagstrum.

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“…The energy loss of He ions is of particular fundamental interest, since its electronic structure enables energy dissipative charge-exchange processes not observed for hydrogen projectiles [30]. Both changed mean charge states as well as a direct energy loss in the process are possible consequences.…”

Section: Introductionmentioning

confidence: 99%

Electronic interactions of medium-energy ions in hafnium dioxide

Primetzhofer

2014

Phys. Rev. A

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In this article, the electronic interaction of medium-energy ions with hafnium dioxide is studied. Stopping cross sections for He ions in the energy range from 30 to 160 keV have been measured in backscattering experiments from thin films of HfO 2 on Si using time-of-flight medium-energy ion scattering. The observed energy loss for helium ions is found to be high compared to expectations from earlier results for hydrogen in HfO 2 , a result which indicates a contribution from energy-loss processes that is different from direct excitation of electron-hole pairs in close collisions. Furthermore, data exhibit a significant deviation from velocity proportionality. A discussion of the results, together with data from studies for H and He in SiO 2 , show characteristic differences which are traced back to different electronic structures of the target materials and their influence on the charge-exchange channels that are active in the interaction with helium. Charge exchange, in turn, via shifted mean-charge states, will influence the observed ionization along the ion track. The results can furthermore serve as reference values for ion-beam-based depth profiling at medium and low ion energies.

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Auger neutralization and ionization processes for charge exchange between slow noble gas atoms and solid surfaces

Cited by 48 publications

References 172 publications

Investigation of background electron emission in the LUX detector

Investigation of background electron emission in the LUX detector

Quantitative modeling of secondary electron emission from slow-ion bombardment on semiconductors

Electronic interactions of medium-energy ions in hafnium dioxide

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