Attribution of the 3.45 eV GaN nanowires luminescence to inversion domain boundaries

Auzelle, Thomas; Haas, Benedikt; Hertog, M. den; Rouvière, Jean-Luc; Daudin, B.; Gayral, B.

doi:10.1063/1.4927826

Cited by 51 publications

(56 citation statements)

References 18 publications

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“…For GaN NWs, this transition has been recently identified to originate from inversion domain boundaries (IDBs). 39 The absence of this transition suggests a reduced density of IDBs for growth on the Ti foil.…”

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confidence: 99%

“…Therefore, the linewidth of the (D 0 , X A ) transition for the NW ensemble on Ti is close to that of our optimized sample on Si and also comparable to other values reported in the literature. 36,38,39 For both samples, we additionally detect the recombination of free excitons (X A ) at 3.478 eV, and the radiative recombination of excitons bound to I 1 basal-plane stacking faults SFs [(I 1 , X A )] between 3.40 and 3.44 eV. The intensity ratio between the (D 0 , X A ) and the (I 1 , X) transitions is 50 and 300 for the NWs grown on Ti and Si, respectively.…”

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confidence: 99%

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Molecular beam epitaxy of single crystalline GaN nanowires on a flexible Ti foil

Calabrese

Corfdir

Gao

et al. 2016

Applied Physics Letters

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We demonstrate the self-assembled growth of vertically aligned GaN nanowire ensembles on a flexible Ti foil by plasma-assisted molecular beam epitaxy. The analysis of single nanowires by transmission electron microscopy reveals that they are single crystalline. Low-temperature photoluminescence spectroscopy demonstrates that, in comparison to standard GaN nanowires grown on Si, the nanowires prepared on the Ti foil exhibit a equivalent crystalline perfection, a higher density of basal-plane stacking faults, but a reduced density of inversion domain boundaries. The room-temperature photoluminescence spectrum of the nanowire ensemble is not influenced or degraded by the bending of the substrate. The present results pave the way for the fabrication of flexible optoelectronic devices based on GaN nanowires on metal foils.The integration of electronic and optoelectronic devices on flexible substrates is motivated by the vision of novel and/or economically relevant applications. 1,2 In this context, inorganic semiconductor nanowires (NWs) have recently emerged as promising candidates for flexible electronics and optoelectronics. 2,3 Their large aspect ratio facilitates the expulsion of threading dislocation at the NW sidewalls, leading to their complete absence in the upper sections of well-developed NWs. This effect alleviates the requirement of lattice matching with the substrate and thus lifts the stringent constraints concerning the choice of the substrate material. 4,5 Indeed, the direct growth of semiconductor NW ensembles on flexible substrates has already been demonstrated for different material systems: ZnO NWs on polymer-based indium-tin-oxide coated substrates 6 and on paper, 7 Ge NWs on plastic films 8 as well as on Au coated Al foils 9 and Si NWs on stainless steel. 10 However, the direct growth of inorganic semiconductors on flexible substrates is frequently hampered by either the low melting point of the organic materials used as substrate 11 or the occurrence of interfacial reactions when semiconductors are directly grown on metallic surfaces. 12,13 To overcome these issues and extend the possible range of material combinations, the wet etching of the substrate followed by NW embedding in a plastic film, 14 and different lift-off techniques such as dry transfer 15,16 and transfer printinting 17,18 have been developed. Using these methods, arrays of vertically oriented CdS 14 and Si 11,19 NWs have been fabricated on flexible substrates. Regarding group-III nitrides, the material of choice for solid-state lighting and high-power electronics, the integration of GaN NWs on flexible substrates has been achieved either by transferring NW arrays grown on Si to polymer films 20,21 or by a lift-off process of NW ensembles grown on graphene coated Cu substrates. 22 Metal foils are a particularly interesting type of substrate because they are not only flexible but also exhibit excellent electrical and thermal conductivities as well as a high optical reflectance. However, as pointed out above, the direct growth of...

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confidence: 99%

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confidence: 99%

Molecular beam epitaxy of single crystalline GaN nanowires on a flexible Ti foil

Calabrese

Corfdir

Gao

et al. 2016

Applied Physics Letters

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“…According to the TEM analysis, the broadening of the NBE into lower energies might be partially attributed to IDB-related emission. Recently, the PL emission peak of GaN NRs at low temperatures (3.45 eV) has been attributed to IDB-related defects56. Moreover, the I 2 -type basal-plane SFs, which emit at 3.35 eV, were clearly suppressed in the GaN NRs.…”

Section: Resultsmentioning

confidence: 99%

III-nitride core–shell nanorod array on quartz substrates

Bae

Min

Hwang

et al. 2017

Sci Rep

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We report the fabrication of near-vertically elongated GaN nanorods on quartz substrates. To control the preferred orientation and length of individual GaN nanorods, we combined molecular beam epitaxy (MBE) with pulsed-mode metal–organic chemical vapor deposition (MOCVD). The MBE-grown buffer layer was composed of GaN nanograins exhibiting an ordered surface and preferred orientation along the surface normal direction. Position-controlled growth of the GaN nanorods was achieved by selective-area growth using MOCVD. Simultaneously, the GaN nanorods were elongated by the pulsed-mode growth. The microstructural and optical properties of both GaN nanorods and InGaN/GaN core–shell nanorods were then investigated. The nanorods were highly crystalline and the core–shell structures exhibited optical emission properties, indicating the feasibility of fabricating III-nitride nano-optoelectronic devices on amorphous substrates.

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“…It should be mentioned that some groups have observed a mixture of polarities within a single NW [51][52][53]. It can not be ruled out that this also occurs for some SAG NWs on diamond Fig.…”

Section: Structural Propertiesmentioning

confidence: 90%

“…In the literature, this emission has been attributed to Ga vacancies which are induced by the N-rich growth conditions [60]. However, a more recent publication assigns this emission to prismatic inversion domain boundaries which are accompanied by polarity mixtures within a single NW [53].…”

Section: Optical Propertiesmentioning

confidence: 96%