Atomistic simulation of ion channeling in heavily doped Si:As

Satta, Alessandra; Albertazzi, E.; Bianconi, M.; Lulli, G.; Balboni, S.; Colombo, Luciano

doi:10.1016/j.nimb.2004.12.027

Cited by 9 publications

(7 citation statements)

References 21 publications

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“…We anticipate that the electron concentration can be further increased by optimizing the Te implantation fluence and annealing parameters, therefore opening a new avenue towards ultra-high n-type doping for the Si-based new generation microelectronics. As a final remark, we cannot exclude the appearance of Te n V complexes from RBS/C [55,56]. However, the measured high carrier concentration supports that Te n V complexes cannot be the major states since they are electrically-inactive centers [7,12,14,16,20].…”

Section: (D))mentioning

confidence: 88%

Breaking the Doping Limit in Silicon by Deep Impurities

et al. 2019

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N-type doping in Si by shallow impurities, such as P, As and Sb, exhibits an intrinsic limit due to the Fermi-level pinning via defect complexes at high doping concentrations. Here we demonstrate that doping Si with the chalcogen Te by non-equilibrium processing, a deep double donor, can exceed this limit and yield higher electron concentrations. In contrast to shallow impurities, both the interstitial Te fraction decreases with increasing doping concentration and substitutional Te dimers become the dominant configuration as effective donors, leading to a non-saturating carrier concentration as well as to an insulator-to-metal transition. First-principle calculations reveal that the Te dimers possess the lowest formation energy and donate two electrons per dimer to the conduction band. These results provide novel insight into physics of deep impurities and lead to a possible solution for the ultra-high electron concentration needed in today's Si-based nanoelectronics. * Corresponding authors,

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Section: (D))mentioning

confidence: 88%

Breaking the Doping Limit in Silicon by Deep Impurities

et al. 2019

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“…As such, an understanding of the atomic structures of dopants in semiconductors would assist in the development of new process technologies for the fabrication of high-performance devices. For this reason, atomic level dopant structures have been investigated using both theoretical and experimental approaches, − although the direct observation of the three-dimensional (3D) structures of dopant arrangements has been difficult to achieve. X-ray diffraction (XRD) and electron diffraction are powerful methods of visualizing 3D atomic structures; however, these techniques are only applicable to crystalline structures and cannot be applied to the visualization of dopant structures because the dopants are not dispersed with a regular periodicity in the crystal.…”

mentioning

confidence: 99%

“…X-ray diffraction (XRD) and electron diffraction are powerful methods of visualizing 3D atomic structures; however, these techniques are only applicable to crystalline structures and cannot be applied to the visualization of dopant structures because the dopants are not dispersed with a regular periodicity in the crystal. X-ray absorption fine structure (XAFS) can provide information regarding dopants, although only with respect to the atomic distance. ,, In addition, ion scattering can be used to detect the positions of target atoms relative to crystalline matrix channels. − High-resolution scanning transmission electron microscopy (STEM) has also been used to image individual dopant atoms in real space and has provided data regarding the formation of dopant clusters. , The determination of the 3D structure of the dopant has also been attempted . In principle, however, direct imaging for light elements or cases involving vacancies is difficult.…”

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confidence: 99%

Individual Atomic Imaging of Multiple Dopant Sites in As-Doped Si Using Spectro-Photoelectron Holography

et al. 2017

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The atomic scale characterization of dopant atoms in semiconductor devices to establish correlations with the electrical activation of these atoms is essential to the advancement of contemporary semiconductor process technology. Spectro-photoelectron holography combined with first-principles simulations can determine the local three-dimensional atomic structures of dopant elements, which in turn affect their electronic states. In the work reported herein, this technique was used to examine arsenic (As) atoms doped into a silicon (Si) crystal. As 3d core level photoelectron spectroscopy demonstrated the presence of three types of As atoms at a total concentration of approximately 10 cm, denoted as BEH, BEM, and BEL. On the basis of Hall effect measurements, the BEH atoms corresponded to electrically active As occupying substitutional sites and exhibiting larger thermal fluctuations than the Si atoms, while the BEM atoms corresponded to electrically inactive As embedded in the AsV (n = 2-4) type clusters. Finally, the BEL atoms were assigned to electrically inactive As in locally disordered structures.

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“…For B doped in Si, clusters composed of some B atoms and Si atoms formed in an interstitial site in a Si crystal have been investigated. [9][10][11][12] In the case of As doped in Si, various cluster structures 7,8,[12][13][14][15][16][17][18][19][20][21][22][23][24][25][26][27] composed of complexes of multiple As atoms with a Si vacancy have been discussed. In so-called As n V (n = 1-4) structures, the As atoms occupy substitutional sites surrounding a vacancy.…”

Section: Introductionmentioning

confidence: 99%

“…In so-called As n V (n = 1-4) structures, the As atoms occupy substitutional sites surrounding a vacancy. 8,16,19,20,22,[24][25][26] In donor-pair-type clusters, such as DP (2) and DP(4), a couple of As atoms occupy the second or fourth nearest neighbor (NN) 23) and are to be relaxed by crystal lattice deformation.…”

Section: Introductionmentioning

confidence: 99%

Analyses of three-dimensional atomic arrangements of impurities doped in Si relating to electrical activity by spectro-photoelectron holography

Tsutsui

Morikawa

2020

Jpn. J. Appl. Phys.

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Electrical activation of dopants in semiconductors with high concentration is a significant requirement in device technology. However, the maximum concentration is actually limited depending on the materials and process conditions, and deactivated dopants are considered to form various cluster structures. Photoelectron holography is demonstrated to be useful for analyzing the three-dimensional (3D) atomic arrangements of such structures. Through experiments of As doped in Si, the usefulness of this method as well as the combination of first-principles calculation and simulation is discussed. As a result, the 3D atomic arrangements of individual substitutional As, which is electrically active, and AsnV (n = 2–4) clusters, which are electrically inactive, are revealed. Furthermore, co-doping of As and B is proposed as a new method to enhance the activation rate of As based on structural analyses and theoretical prediction.

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Atomistic simulation of ion channeling in heavily doped Si:As

Cited by 9 publications

References 21 publications

Breaking the Doping Limit in Silicon by Deep Impurities

Breaking the Doping Limit in Silicon by Deep Impurities

Individual Atomic Imaging of Multiple Dopant Sites in As-Doped Si Using Spectro-Photoelectron Holography

Analyses of three-dimensional atomic arrangements of impurities doped in Si relating to electrical activity by spectro-photoelectron holography

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