Atomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures

Lin, Yu Chuan; Ghosh, Ram Krishna; Addou, Rafik; Lü, Ning; Eichfeld, Sarah M.; Zhu, Hai‐Liang; Li, Ming Yang; Peng, Xin; Kim, Moon J.; Li, Lain‐Jong; Wallace, Robert M.; Datta, Suman; Robinson, Joshua A.

doi:10.1038/ncomms8311

Cited by 402 publications

(251 citation statements)

References 50 publications

(97 reference statements)

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“…Van der Waals (vdW) heterostructures composed of 2D layered materials have been attempted intensively recently due to the novel physical properties covering a wide range of electronic, optical, and optoelectronic systems 198, 199, 200, 201, 202, 203, 204, 205, 206, 207, 208, 209, 210, 211, 212, 213, 214, 215, 216, 217, 218, 219, 220, 221, 222, 223, 224, 225, 226, 227, 228, 229, 230, 231, 232, 233, 234, 235, 236, 237, 238, 239, 240, 241, 242. Jo and co‐workers130 synthesized polymorphic 2D tin‐sulfides of either p‐type SnS or n‐type SnS 2 via adjusting hydrogen during the process.…”

Section: Preparation Methods and Characterizationsmentioning

confidence: 99%

Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family

et al. 2016

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As an important component of 2D layered materials (2DLMs), the 2D group IV metal chalcogenides (GIVMCs) have drawn much attention recently due to their earth‐abundant, low‐cost, and environmentally friendly characteristics, thus catering well to the sustainable electronics and optoelectronics applications. In this instructive review, the booming research advancements of 2D GIVMCs in the last few years have been presented. First, the unique crystal and electronic structures are introduced, suggesting novel physical properties. Then the various methods adopted for synthesis of 2D GIVMCs are summarized such as mechanical exfoliation, solvothermal method, and vapor deposition. Furthermore, the review focuses on the applications in field effect transistors and photodetectors based on 2D GIVMCs, and extends to flexible devices. Additionally, the 2D GIVMCs based ternary alloys and heterostructures have also been presented, as well as the applications in electronics and optoelectronics. Finally, the conclusion and outlook have also been presented in the end of the review.

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Section: Preparation Methods and Characterizationsmentioning

confidence: 99%

Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family

et al. 2016

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“…Recently, negative differential resistance (NDR) devices have attracted considerable attention owing to their folded current–voltage ( I – V ) characteristic (N-shaped I – V curve), which presents multiple threshold voltage values123456789101112131415161718192021222324252627. Because of this remarkable property, studies associated with the NDR devices have been explored for realizing multi-valued logic (MVL) applications17111326.…”

mentioning

confidence: 99%

Phosphorene/rhenium disulfide heterojunction-based negative differential resistance device for multi-valued logic

et al. 2016

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Recently, negative differential resistance devices have attracted considerable attention due to their folded current–voltage characteristic, which presents multiple threshold voltage values. Because of this remarkable property, studies associated with the negative differential resistance devices have been explored for realizing multi-valued logic applications. Here we demonstrate a negative differential resistance device based on a phosphorene/rhenium disulfide (BP/ReS2) heterojunction that is formed by type-III broken-gap band alignment, showing high peak-to-valley current ratio values of 4.2 and 6.9 at room temperature and 180 K, respectively. Also, the carrier transport mechanism of the BP/ReS2 negative differential resistance device is investigated in detail by analysing the tunnelling and diffusion currents at various temperatures with the proposed analytic negative differential resistance device model. Finally, we demonstrate a ternary inverter as a multi-valued logic application. This study of a two-dimensional material heterojunction is a step forward toward future multi-valued logic device research.

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“…In recent five years, strong interlayer coupling and its effects on novel physical phenomena and diverse potential applications of vdWs heterostructures built from 2D materials has become a hot topic in various disciplines 2,15,16,18,19,[24][25][26][27][28] . The multilayer vdW heterostructures can be experimentally prepared by using state-of-the-art atomically thin 2D materials synthesis techiques, such as, chemical vapour deposition (CVD) to directly grow through the vertical layer-by-layer growth mode 29,30 , and exfoliation techniques with roll-to-roll assembly 2 and co-segregation method 31 .…”

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confidence: 99%

Two-Dimensional MoS₂-Graphene-Based Multilayer van der Waals Heterostructures: Enhanced Charge Transfer and Optical Absorption, and Electric-Field Tunable Dirac Point and Band Gap

Huang

et al. 2017

Chem. Mater.

140

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Multilayer van der Waals (vdWs) heterostructures assembled by diverse atomically thin layers have demonstrated a wide range of fascinating phenomena and novel applications.Understanding the interlayer coupling and its correlation effect is paramount for designing novel vdWs heterostructures with desirable physical properties. Using a detailed theoretical study of 2D MoS 2 -graphene (GR)-based heterostructures based on state-of-the-art hybrid density functional theory, we reveal that for 2D few-layer heterostructures, vdWs forces between neighboring layers depend on the number of layers. Compared to that in bilayer, the interlayer coupling in trilayer vdW heterostructures can significantly be enhanced by stacking the third layer, directly supported by short interlayer separations and more interfacial charge transfer. The trilayer shows strong light absorption over a wide range (<700 nm), making it very potential for solar energy harvesting and conversion. Moreover, the Dirac point of GR and band gaps of each layer and trilayer can be readily tuned by external electric field, verifying multilayer vdWs heterostructures with unqiue optoelectronic properties found by experiments. These results suggest that tuning the vdWs interaction, as a new design parameter, would be an effective strategy for devising particular 2D multilayer vdWs heterostructures to meet the demands in various applications.

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Atomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures

Cited by 402 publications

References 50 publications

Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family

Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family

Phosphorene/rhenium disulfide heterojunction-based negative differential resistance device for multi-valued logic

Two-Dimensional MoS₂-Graphene-Based Multilayer van der Waals Heterostructures: Enhanced Charge Transfer and Optical Absorption, and Electric-Field Tunable Dirac Point and Band Gap

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Atomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures

Cited by 402 publications

References 50 publications

Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family

Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family

Phosphorene/rhenium disulfide heterojunction-based negative differential resistance device for multi-valued logic

Two-Dimensional MoS2-Graphene-Based Multilayer van der Waals Heterostructures: Enhanced Charge Transfer and Optical Absorption, and Electric-Field Tunable Dirac Point and Band Gap

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Product

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Two-Dimensional MoS₂-Graphene-Based Multilayer van der Waals Heterostructures: Enhanced Charge Transfer and Optical Absorption, and Electric-Field Tunable Dirac Point and Band Gap