Atomic layers of hybridized boron nitride and graphene domains

Ci, Lijie; Li, Song; Jin, Chuanhong; Jariwala, Deep; Wu, Dien; Li, Yongjie; Srivastava, Anchal; Wang, Zhengfei; Storr, K.; Balicas, Luis; Liu, Feng; Ajayan, Pulickel M.

doi:10.1038/nmat2711

Cited by 2,048 publications

(1,903 citation statements)

References 36 publications

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“…A new peak observed at 397.6 eV for B,N‐carbon can be attributed to the N—B bond 42, 43. For B 1S, three B‐containing species can be clearly observed for B‐carbon, which are corresponded to the BC 3 (190.2 eV), BC 2 O (191.1 eV), and BCO 2 (192.3 eV) groups,14, 15, 44 while a new deconvoluted peak observed at 190.7 eV for B,N‐carbon is attributed to the B—N bond 42, 43, 45, 46, 47. Based on the above analyses, B and N heteroatoms are successfully introduced into the carbon matrix (Figure 2), which is also supported by the C 1s and O 1s spectra (Figure S5, Supporting Information).…”

Section: Resultsmentioning

confidence: 96%

B, N Codoped and Defect‐Rich Nanocarbon Material as a Metal‐Free Bifunctional Electrocatalyst for Oxygen Reduction and Evolution Reactions

et al. 2018

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The development of highly active, inexpensive, and stable bifunctional oxygen reduction reaction (ORR) and oxygen evolution reaction (OER) catalysts to replace noble metal Pt and RuO2 catalysts remains a considerable challenge for highly demanded reversible fuel cells and metal–air batteries. Here, a simple approach for the facile construction of a defective nanocarbon material is reported with B and N dopants (B,N‐carbon) as a superior bifunctional metal‐free catalyst for both ORR and OER. The catalyst is prepared by pyrolyzing the composites of ethyl cellulose and high‐boiling point 4‐(1‐naphthyl)benzeneboronic acid in NH3 atmosphere with an inexpensive Zn‐based template. The obtained porous B,N‐carbon with rich carbon defects exhibits excellent ORR and OER performances, including high activity and stability. In alkaline medium, B,N‐carbon material shows high ORR activity with an onset potential (E onset) reaching 0.98 V versus reversible hydrogen electrode (RHE), very close to that of Pt/C, a high electron transfer number and excellent stability. This catalyst also presents the admirable ORR activity in acidic medium with a high E onset of 0.81 V versus RHE and a four‐electron process. The OER activity of B,N‐carbon is superior to that of the precious metal RuO2 and Pt/C catalysts. A Zn–air battery using B,N‐carbon as the air cathode exhibits a low voltage gap between charge and discharge and long‐term stability. The excellent electrocatalytic performance of this porous nanocarbon material is attributed to the combined positive effects of the abundant carbon defects and the heteroatom codopants.

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Section: Resultsmentioning

confidence: 96%

B, N Codoped and Defect‐Rich Nanocarbon Material as a Metal‐Free Bifunctional Electrocatalyst for Oxygen Reduction and Evolution Reactions

et al. 2018

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“…The results show that the resistance increases as the total area of the graphene domains increases, which is consistent with the previous report of h-BNC on SiO2. 6 We also fabricated FETs based on the h-BNC channels, as shown in Figure S8 in Supporting Information. We fabricated FETs using a top gate, where Al2O3 was used as a gate oxide.…”

Section: Resultsmentioning

confidence: 99%

“…Such a h-BNC layer was observed when a h-BNC layer was grown by CVD. 6 The h-BNC layer was fabricated on a Cu foil using methane (CH4) and ammonia borane (NH3-BH3). The CVD-grown h-BNC layer was transferred onto a SiO2/Si substrate for device applications.…”

Section: Resultsmentioning

confidence: 99%

Epitaxial Growth of a Single-Crystal Hybridized Boron Nitride and Graphene Layer on a Wide-Band Gap Semiconductor

et al. 2015

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Vertical and lateral heterogeneous structures of two-dimensional (2D) materials have paved the way for pioneering studies on the physics and applications of 2D materials. A hybridized hexagonal boron nitride (h-BN) and graphene lateral structure, a heterogeneous 2D structure, has been fabricated on single-crystal metals or metal foils by chemical vapor deposition (CVD).However, once fabricated on metals, the h-BN/graphene lateral structures require an additional transfer process for device applications, as reported for CVD graphene grown on metal foils. Here, we demonstrate that a single-crystal h-BN/graphene lateral structure can be epitaxially grown on a wide-gap semiconductor, SiC(0001). First, a single-crystal h-BN layer with the same orientation as bulk SiC was grown on a Si-terminated SiC substrate at 850 ℃ using borazine molecules.Second, when heated above 1150 ℃ in vacuum, the h-BN layer was partially removed and, subsequently, replaced with graphene domains. Interestingly, these graphene domains possess the same orientation as the h-BN layer, resulting in a single-crystal h-BN/graphene lateral structure on a whole sample area. For temperatures above 1600 ℃ , the single-crystal h-BN layer was completely replaced by the single-crystal graphene layer. The crystalline structure, electronic band structure, and atomic structure of the h-BN/graphene lateral structure were studied by using low energy electron diffraction, angle-resolved photoemission spectroscopy, and scanning tunneling microscopy, respectively. The h-BN/graphene lateral structure fabricated on a wide-gap semiconductor substrate can be directly applied to devices without a further transfer process, as reported for epitaxial graphene on a SiC substrate.

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“…Graphene/ h ‐BN monolayer in‐plane heterostructure, formed by merging the two materials into a single atomic layer, has attracted considerable attentions owing to its promising electronic applications. It has been both theoretically predicted and experimentally verified that the band gap can be opened and tuned by embedding h ‐BN domains in graphene layer 3, 4, 5, 6, 7, 8. Some electronic applications were demonstrated based on patterned graphene/ h ‐BN in‐plane heterostructures 9, 10.…”

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confidence: 97%

Synthesis of High‐Quality Graphene and Hexagonal Boron Nitride Monolayer In‐Plane Heterostructure on Cu–Ni Alloy

Yang

et al. 2017

Advanced Science

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Graphene/hexagonal boron nitride (h‐BN) monolayer in‐plane heterostructure offers a novel material platform for both fundamental research and device applications. To obtain such a heterostructure in high quality via controllable synthetic approaches is still challenging. In this work, in‐plane epitaxy of graphene/h‐BN heterostructure is demonstrated on Cu–Ni substrates. The introduction of nickel to copper substrate not only enhances the capability of decomposing polyaminoborane residues but also promotes graphene growth via isothermal segregation. On the alloy surface partially covered by h‐BN, graphene is found to nucleate at the corners of the as‐formed h‐BN grains, and the high growth rate for graphene minimizes the damage of graphene‐growth process on h‐BN lattice. As a result, high‐quality graphene/h‐BN in‐plane heterostructure with epitaxial relationship can be formed, which is supported by extensive characterizations. Photodetector device applications are demonstrated based on the in‐plane heterostructure. The success will have important impact on future research and applications based on this unique material platform.

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Atomic layers of hybridized boron nitride and graphene domains

Cited by 2,048 publications

References 36 publications

B, N Codoped and Defect‐Rich Nanocarbon Material as a Metal‐Free Bifunctional Electrocatalyst for Oxygen Reduction and Evolution Reactions

B, N Codoped and Defect‐Rich Nanocarbon Material as a Metal‐Free Bifunctional Electrocatalyst for Oxygen Reduction and Evolution Reactions

Epitaxial Growth of a Single-Crystal Hybridized Boron Nitride and Graphene Layer on a Wide-Band Gap Semiconductor

Synthesis of High‐Quality Graphene and Hexagonal Boron Nitride Monolayer In‐Plane Heterostructure on Cu–Ni Alloy

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