Atomic layer epitaxy of CdTe using an automated electrochemical thin-layer flow deposition reactor

Flowers, Billy H.; Wade, T.; Garvey, John W; Lay, Marcus D.; Happek, U.; Stickney, John L.

doi:10.1016/s0022-0728(02)00679-4

Cited by 80 publications

(90 citation statements)

References 41 publications

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“…The electrochemical flow cell is close to those described by the Stickney [24][25][26] and Zhu-Yang [27] working groups. A platinum sheet (Sigma-Aldrich, Inc., USA) is used as counter electrode.…”

Section: Ec-ale Depositionsupporting

confidence: 58%

Underpotential deposition of selenium and antimony on gold

Chen

Wang

Pradel

et al. 2015

J Solid State Electrochem

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International audienceThe present paper is a detailed study on the deposition of Sb2Se3 thin films by electrochemical atomic layer epitaxy (EC-ALE). The related electrochemical aspects have been deeply investigated by means of cyclic voltammetry, anodic potentiodynamic scanning, and coulometry. The UPD layer of Se was obtained by first depositing both UPD Se and a small amount of bulk Se and then stripping the redundant bulk Se in blank solutions. A "two times rinsing" method was developed to avoid the formation of red Se during the rinsing process. The deposition parameters were determined for the first three EC-ALE cycles, and from these values, a nanofilm containing Sb and Se atoms has been obtained. By scanning electron microscopy and coulometry, it was shown that the deposit is compact and it has a stoichiometry very close to that of Sb2Se3. The Raman spectral analyses show that the deposit is made of Sb2Se3 nanoclusters

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Section: Ec-ale Depositionsupporting

confidence: 58%

Underpotential deposition of selenium and antimony on gold

Chen

Wang

Pradel

et al. 2015

J Solid State Electrochem

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“…Under these conditions, bulk Te is reduced to a telluride species, probably HTe ) , which then diffuses away. Te stabilized by bonding to the substrate remains, while the bulk is removed [30]. Thus, to circumvent the problem of traces of bulk Te a reduction step in blank has been inserted after the Te deposition step.…”

Section: Resultsmentioning

confidence: 99%

“…All components were computer controlled using a LABVIEW program. The flow cell has been described previously [30], with minor design changes to the reference compartment. A Teflon compression fitting was changed to a simple O-ring to hold the reference electrode, providing a better seal.…”

Section: Methodsmentioning

confidence: 99%

“…Most previous work with EC-ALE has involved electrodeposition of nanofilms of compound semiconductors, including: II-VI compounds such as CdTe, CdS and ZnSe [29][30][31][32] as well as some III-V compounds such as GaAs, InAs, and InSb [31][32][33][34]. PbSe [35], PbTe and Bi 2 Te 3 have also been grown using EC-ALE.…”

Section: Introductionmentioning

confidence: 99%

“…The quality of the deposits has improved dramatically from the first studies using a thin layer electrochemical cell (TLE) [39], to the present flow cell design [30]. Early studies were fraught with problems such as poor reproducibility and deposit inhomogeneity.…”

Section: Introductionmentioning

confidence: 99%

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Optimization of CdTe nanofilm formation by electrochemical atomic layer epitaxy (EC-ALE)

et al. 2006

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This paper concerns optimization studies of the growth of cadmium telluride, an important II-VI compound semiconductor, using electrochemical atomic layer epitaxy (EC-ALE). The importance of the potentials used to deposit atomic layers of Cd and Te, as well as the potential used to strip excess Te, were investigated. These potentials were used in a cycle, an EC-ALE cycle, to form deposits one atomic layer at a time, using a sequence of surface limited reactions. The optimal potentials for the CdTe EC-ALE cycle included Cd deposition at ) 0.65 V, Te deposition at ) 0.35 V and bulk Te stripping at ) 0.70 V. The deposits obtained were stoichiometric, with a Te/ Cd atomic ratio of 1.01 from electron probe microanalysis (EPMA). Electrochemical quartz crystal microbalance (EQCM) studies of the optimal condition indicated that about a third of the deposited Cd was oxidatively stripped at the potential used to deposit Te. Glancing angle X-ray diffraction studies showed a (111) preferred orientation for the deposit, while room temperature near infrared absorption measurements indicated a direct band gap of 1.5 eV.

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