Atomic layer deposition process with TiF_4 as a precursor for depositing metal fluoride thin films

Pilvi, Tero; Ritala, Mikko; Leskelä, Markku; Bischoff, Martin; Kaiser, Ute; Kaiser, Norbert

doi:10.1364/ao.47.00c271

Cited by 39 publications

(21 citation statements)

References 17 publications

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“…This lamellar growth of YF 3 thin films differs from the columnar or granular growth seen in the metal fluorides deposited by ALD from TiF 4 . [38] The observed difference in film growth type is also shown in cross-sectional SEM images Full Paper Fig. 2.…”

Section: Film Propertiesmentioning

confidence: 80%

“…However, the transmittance of the YF 3 thin films in the UV region is not as high as the transmittance achieved with the other metal fluoride films deposited by ALD from TiF 4 . [38] Electrical properties were measured for two films, deposited at 200 and 300 8C, in Al/YF 3 /ITO glass capacitor structures. The average permittivity obtained for a 93 nm thick film deposited at 200 8C was 5.8 at 10 kHz.…”

Section: Film Propertiesmentioning

confidence: 99%

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ALD of YF₃ Thin Films from TiF₄ and Y(thd)₃ Precursors

Pilvi

Puukilainen

Munnik

et al. 2009

Chemical Vapor Deposition

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Yttrium fluoride (YF 3 ) is a dielectric material with good light transmittance between the ultraviolet (UV) and infrared (IR) range of wavelengths. In this paper we introduce the first use of the atomic layer deposition (ALD) of YF 3 thin films. The films are grown at 175-325 8C. Y(thd) 3 (thd ¼ 2,2,6,6-tetramethyl-3,5-heptanedionato) is used as a cation source and TiF 4 as a fluorine precursor. YF 3 film growth characteristics, together with structural, optical, and electrical properties, are studied. Various methods, such as spectrophotometry, X-ray diffractometry (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and elastic recoil detection analysis (ERDA) are applied to characterize the films. Electrical properties are analyzed from Al/YF 3 /indium-tin-oxide capacitor structures at room temperature. The growth rates of the films are between 1.1 and 1.7 Å per cycle. The films grown below 225 8C are amorphous, otherwise they are polycrystalline. The impurities detected in the YF 3 film are H, C, O, and Ti. The amount of all of these tends to decrease with increasing deposition temperature, and is only 3.0 at.-% at 325 8C. Permittivities of the films are around 6. The refractive indices are 1.51-1.59 (at l ¼ 580 nm), and high light transmittance is achieved from the UV to IR regions with the sample grown at 300 8C.

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Section: Film Propertiesmentioning

confidence: 80%

Section: Film Propertiesmentioning

confidence: 99%

ALD of YF₃ Thin Films from TiF₄ and Y(thd)₃ Precursors

Pilvi

Puukilainen

Munnik

et al. 2009

Chemical Vapor Deposition

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“…This reaction proceeds through ligand exchange reaction between the metal β-diketonate and the metal fluoride. [ 42 ] Other fluoride precursors, such as Hhfa (1,1,1,5,5,5-haxafluoroacetylacetonate) can be used for the preparation of Al-O-F as well as calcium and lanthanum fluoride thin films [43].…”

Section: Optical Componentsmentioning

confidence: 99%

ALD Applications Beyond Outside IC Technology - Existing and Emerging Possibilities

Putkonen

2009

ECS Trans.

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Today, the main industrial application of ALD is manufacturing semiconductor devices, both memory devices and microprocessors. Industrial ALD is, however, searching for new success stories from novel areas. Examples of new applications outside the semiconductor industry include photovoltaics, diffusion barriers, wear resistant materials and optical coatings, all aiming to improve the competitiveness of existing products and create new opportunities for ALD. In this paper we shortly review the existing and emerging application areas where ALD has been recently utilised. We will also show some new results concerning ALD on glass and metal substrates in order to improve the substrate's cracking and wear resistance, respectively. Different industrial ALD tool concepts and process requirements for high throughput production are also discussed.

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“…Previously, ALD of fluorides has been demonstrated using TiF 4 and TaF 5 as the F-source for the deposition of AlF 3 , MgF 2 , CaF 2 , LiF, and LaF 3 , which can be accompanied by Ti or Ta incorporation. [15][16][17][18][19] More recently, AlF 3 , ZrF 4 , MnF 2 , HfF 2 , MgF 2 , and ZnF 2 have been deposited by HF either using pure HF or a HF-pyridine solution. 8,9,20,21 Lee et al gave insight into the reaction mechanisms during ALD using HF as the co-reactant and postulated that HF adsorbed on the surface serves as the reactive sites for the precursor molecules to bind.…”

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confidence: 99%

Atomic layer deposition of aluminum fluoride using Al(CH3)3 and SF6 plasma

Vos

Knoops

Synowicki

et al. 2017

Applied Physics Letters

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Atomic layer deposition process with TiF_4 as a precursor for depositing metal fluoride thin films

Cited by 39 publications

References 17 publications

ALD of YF₃ Thin Films from TiF₄ and Y(thd)₃ Precursors

ALD of YF₃ Thin Films from TiF₄ and Y(thd)₃ Precursors

ALD Applications Beyond Outside IC Technology - Existing and Emerging Possibilities

Atomic layer deposition of aluminum fluoride using Al(CH3)3 and SF6 plasma

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Atomic layer deposition process with TiF_4 as a precursor for depositing metal fluoride thin films

Cited by 39 publications

References 17 publications

ALD of YF3 Thin Films from TiF4 and Y(thd)3 Precursors

ALD of YF3 Thin Films from TiF4 and Y(thd)3 Precursors

ALD Applications Beyond Outside IC Technology - Existing and Emerging Possibilities

Atomic layer deposition of aluminum fluoride using Al(CH3)3 and SF6 plasma

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Product

Resources

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ALD of YF₃ Thin Films from TiF₄ and Y(thd)₃ Precursors

ALD of YF₃ Thin Films from TiF₄ and Y(thd)₃ Precursors